Order this document by MPS6428/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 CASE 29–04, STYLE 1 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 — Vdc Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 — Vdc Collector Cutoff Current (VCE = 30 Vdc) ICES — 0.025 mA Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO — 0.01 mA Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO — 0.01 mA OFF CHARACTERISTICS Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS6428 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 250 250 250 250 — 650 — — — — 0.2 0.6 Unit ON CHARACTERISTICS DC Current Gain (VCE = 5.0 Vdc, IC = 0.01 mAdc) (VCE = 5.0 Vdc, IC = 0.1 mAdc) (VCE = 5.0 Vdc, IC = 1.0 mAdc) (VCE = 5.0 Vdc, IC = 10 mAdc) hFE — Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base – Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) 0.56 0.66 Vdc fT 100 700 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 3.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hie 3.0 30 kΩ Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hre 2.0 20 X 10– 4 Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 200 800 — Output Admittance (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hoe 5.0 50 mmhos SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 V, f = 100 MHz) NOISE FIGURE/TOTAL NOISE VOLTAGE CHARACTERISTICS Noise Figure/Voltage (VCE = 5.0 V, IC = 0.1 mA, TA = 25°C) NF VT Max (1) NF VT Max (2) NF VT Max (3) 7.0 6.0 3.5 18.1 5700 4.3 Unit dB nV 1. RS = 10 kΩ, BW = 1.0 Hz, f = 100 Hz 2. RS = 50 kΩ, BW = 15.7 kHz, f = 10 Hz–10 kHz 3. RS = 500 Ω, BW = 1.0 Hz, f = 10 Hz 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS6428 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 3 MPS6428 Motorola reserves the right to make changes without further notice to any products herein. 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