Order this document by MPS3646/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage VCES 40 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous — 10 ms Pulse IC 300 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 40 — Vdc Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) VCEO(sus) 15 — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 40 — Vdc Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc — — 0.5 3.0 Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65°C) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. mAdc ICES Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 30 25 15 120 — — — ON CHARACTERISTICS(1) DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 0.5 Vdc) (IC = 300 mA, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 30 mA, IB = 3.0 mA, TA = 65°C) VCE(sat) — — — — 0.2 0.28 0.5 0.3 Vdc Base – Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mA) VBE(sat) 0.73 — — 0.95 1.2 1.7 Vdc fT 350 — MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 5.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 9.0 pF ton — 18 ns td — 10 ns tr — 15 ns toff — 28 ns tf — 15 ns ts — 18 ns SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn–On Time (VCC = 10 Vdc, Vdc IC = 300 mAdc, mAdc IB1 = 30 mAdc) (Figure 1) Delay Time Rise Time Turn–Off Time ((VCC = 10 Vdc,, IC = 300 mAdc,, IB1 = IB2 = 30 mAdc)) (Figure 1) Fall Time Storage Time (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Figure 1. Switching Time Equivalent Test Circuit Test Condition IC 2 VCC RS mA V Ω A 10 3 B 10 C 100 RC CS(max) VBE(off) Ω pF V 4 –1.5 10 330 270 0 960 560 4 — 10 560 12 –2.0 96 V1 V2 V3 V V V 10.55 –4.15 10.70 — –4.65 6.55 6.35 –4.65 6.55 V1 ton t1 V3 0 V2 0 VEB(off) < 2 ns toff t1 VCC RC RB CS < 2 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125°C 50 25°C –15°C 30 – 55°C 20 10 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 200 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN TJ = 125°C 25°C 100 –15°C 70 – 55°C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 Figure 2. Minimum Current Gain 270 Ω t1 3V 8 pF +10 V ∆V 0 C < COPT CS < 4 pF C <1 ns 9.2 kΩ PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2% C=0 COPT TIME Figure 3. QT Test Circuit Figure 4. Turn–Off Waveform NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or “stored” in the transistor. QS may be written: QS = Q1 + QV + QX. Q1 is the charge required to develop the required collector current. This charge is primarily a function of alpha cutoff frequency. QV is the charge required to charge the collector–base feedback capacity. QX is excess charge resulting from overdrive, i.e., operation in saturation. The charge required to turn a transistor “on” to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant current step IC . (IB1) and IB1 < < hFE If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turn–off time of the transistor. Figure 3 shows the test circuit and Figure 4 the turn–off waveform. Given QT from Figure 13, the external C for worst–case turn–off in any circuit is: C = QT/∆V, where ∆V is defined in Figure 3. Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPS3646 “ON” CONDITION CHARACTERISTICS VCE, MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 MPS3646 TJ = 25°C 0.8 IC = 10 mA 50 mA 200 mA 100 mA 0.6 0.4 0.2 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (mA) 5.0 7.0 10 20 30 50 VCE, MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 MPS3646 TJ = 25°C 0.8 50 mA IC = 10 mA 100 mA 200 mA 0.6 0.4 0.2 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (mA) 5.0 7.0 10 20 30 50 Figure 5. Collector Saturation Region 1.0 IC/IB = 10 TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV/°C) Vsat , SATURATION VOLTAGE (VOLTS) 1.2 MAX VBE(sat) MIN VBE(sat) 0.8 0.6 MAX VCE(sat) 0.4 0.2 0 1.0 2.0 3.0 50 70 100 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Saturation Voltage Limits 4 200 1.0 0.5 qVC for VCE(sat) (25°C to 125°C) (– 55°C to 25°C) 0 – 0.5 (25°C to 125°C) – 1.0 qVB for VBE (– 55°C to 25°C) – 1.5 – 2.0 0 40 80 120 160 IC, COLLECTOR CURRENT (mA) 200 Figure 7. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3646 DYNAMIC CHARACTERISTICS 200 200 VCC = 10 V TJ = 25°C 100 70 70 t r , RISE TIME (ns) t d, DELAY TIME (ns) 100 IC/IB = 10 TJ = 25°C TJ = 125°C td @ VEB(off) = 3 V 50 30 2V 20 0V 10 VCC = 10 V 50 30 20 VCC = 3 V 10 7.0 7.0 5.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 Figure 8. Delay Time 200 IC/IB = 20 30 TJ = 25°C TJ = 125°C IC/IB = 10 20 10 ts′ 7.0 VCC = 10 V TJ = 25°C TJ = 125°C 100 t f , FALL TIME (ns) t s , STORAGE TIME (ns) 200 Figure 9. Rise Time 50 ^ ts – 1/8 tf 70 50 30 IC/IB = 20 20 IC/IB = 10 10 IB1 = IB2 7.0 5.0 5.0 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 100 200 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 Figure 10. Storage Time 100 200 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 11. Fall Time 10 1000 MAX TYP 7.0 IC/IB = 10 TJ = 25°C TJ = 125°C 700 500 Cibo Q, CHARGE (pC) CAPACITANCE (pF) 100 5.0 Cobo 3.0 300 200 QT 100 VCC = 3 V 70 50 VCC = 10 V 30 2.0 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 10 Figure 12. Junction Capacitance Motorola Small–Signal Transistors, FETs and Diodes Device Data 20 QA VCC = 3 V 1.0 2.0 3.0 Figure 13. Maximum Charge Data 5 MPS3646 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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