QFET
FQH90N15 / FQA90N15
®
N-Channel Power MOSFET
Features
Description
• 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge (typical 220 nC)
• Low Crss (typical 200 pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifire, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
{
z
G
{
G D
S
TO-247
FQH Series
z
z
TO-3P
{
S
FQA Series
G DS
Absolute Maximum Ratings
Symbol
Parameter
FQH90N15/FQA90N15
Unit
150
V
90
63.5
A
A
360
A
±25
V
(Note 2)
1400
mJ
(Note 1)
90
A
Repetitive Avalanche Energy
(Note 1)
37.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
6.0
V/ns
375
2.5
W
W/°C
-55 to +175
°C
300
°C
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
dv/dt
PD
Power Dissipation
(Note 1)
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FQH90N15 / FQA90N15 Rev. C
1
Min.
Max.
Unit
--
0.4
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
October 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQH90N15
FQH90N15
TO-247
--
--
30
FQA90N15
FQA90N15
TO-3P
--
--
30
FQA90N15
FQA90N15_F109
TO-3PN
--
--
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
150
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.15
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 150V, VGS = 0V
VDS = 120V, TC = 150°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25V, VDS = 0V
--
--
-100
nA
2.0
--
4.0
V
--
0.014
0.018
Ω
--
68
--
S
--
6700
8700
pF
--
1400
1800
pF
--
200
260
pF
--
105
220
ns
--
760
1500
ns
--
470
950
ns
--
410
830
ns
--
220
285
nC
--
43
--
nC
--
110
--
nC
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 45A
gFS
Forward Transconductance
VDS = 40V, ID = 45A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 75V, ID = 90A
RG = 25Ω
(Note 4, 5)
VDS = 120V, ID = 90A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
90
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
360
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 90A
--
--
1.5
V
trr
Reverse Recovery Time
175
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/μs
--
Qrr
--
0.97
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 90A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
2
ID, Drain Current [A]
10
ID , Drain Current [A]
Top :
1
10
10
2
10
1
10
0
o
175 C
o
25 C
o
-55 C
Notes :
1. V DS = 30V
Notes :
1. 250μs Pulse Test
o
2. TC = 25 C
-1
0
10
2. 250μs Pulse Test
10
1
10
10
-1
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
IDR , Reverse Drain Current [A]
RDS(on) [Ω],
Drain-Source On-Resistance
0.12
0.09
VGS = 10V
0.06
VGS = 20V
0.03
10
2
10
1
10
0
o
175 C 25oC
Notes :
1. VGS = 0V
o
Note : TJ = 25 C
0.00
2. 250μs Pulse Test
-1
0
50
100
150
200
250
10
300
ID , Drain Current [A]
0.0
0.4
0.8
1.2
2.0
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
18000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
12000
Ciss
Coss
9000
2.4
6000
Notes :
1. VGS = 0 V
Crss
2. f = 1 MHz
3000
VDS = 30V
10
VGS, Gate-Source Voltage [V]
15000
Capacitance [pF]
1.6
VSD , Source-Drain Voltage [V]
VDS = 75V
VDS = 120V
8
6
4
2
Note : ID = 90 A
0
0
-1
10
0
10
1
10
3
FQH90N15 / FQA90N15 Rev. C
0
50
100
150
200
250
Q G, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 45 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
50
100
150
200
150
175
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
100
Operation in This Area
is Limited by R DS(on)
3
10
10
ID, Drain Current [A]
ID, Drain Current [A]
80
10 μs
100 μs
2
1 ms
DC
10 ms
1
10
Notes :
o
1. TC = 25 C
0
10
60
40
20
o
2. TJ = 175 C
3. Single Pulse
0
25
-1
10
0
1
10
2
10
10
50
75
100
125
o
T C, Case Temperature [ C]
VDS, Drain-Source Voltage [V]
D = 0 .5
10
-1
N o te s :
1 . Z ? JC ( t) = 0 .4
0 .2
o
C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
0 .1
3 . T JM - T C = P D M * Z ?
JC
(t)
0 .0 5
PDM
0 .0 2
10
0 .0 1
-2
Z
θJC
(t), Thermal Response
Figure 11. Transient Thermal Response Curve
10
-5
t1
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Typical Performance Characteristics (Continued)
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
7
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
8
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions (Continued)
TO-3PN
Dimensions in Millimeters
9
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be
an exhaustive list of all such trademarks.
OCX™
SILENT SWITCHER®
UniFET™
FACT Quiet Series™
ACEx™
OCXPro™
UltraFET®
GlobalOptoisolator™
ActiveArray™
SMART START™
®
OPTOLOGIC
GTO™
Bottomless™
SPM™
VCX™
HiSeC™
Build it Now™
Stealth™
Wire™
OPTOPLANAR™
I2C™
CoolFET™
SuperFET™
PACMAN™
CROSSVOLT™
SuperSOT™-3
POP™
i-Lo™
DOME™
SuperSOT™-6
Power247™
ImpliedDisconnect™
EcoSPARK™
SuperSOT™-8
PowerEdge™
IntelliMAX™
E2CMOS™
SyncFET™
PowerSaver™
ISOPLANAR™
TCM™
PowerTrench®
LittleFET™
EnSigna™
TinyBoost™
MICROCOUPLER™
FACT™
QFET®
TinyBuck™
MicroFET™
FAST®
QS™
TinyPWM™
MicroPak™
QT Optoelectronics™
FASTr™
TinyPower™
MICROWIRE™
Quiet Series™
FPS™
TinyLogic®
MSX™
RapidConfigure™
FRFET™
MSXPro™
RapidConnect™
TINYOPTO™
µSerDes™
Across the board. Around the world.™
TruTranslation™
ScalarPump™
The Power Franchise®
UHC™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect
its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
10
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
TRADEMARKS