TM
FDA70N20
200V N-Channel MOSFET
Features
Description
• 70A, 200V, RDS(on) = 0.035Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 66 nC)
• Low Crss ( typical 89 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
{
z
G{
z
z
{
TO-3P
G DS
S
FDA Series
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FDA70N20
Unit
200
V
70
45
A
A
280
A
±30
V
Single Pulsed Avalanche Energy
(Note 2)
1742
mJ
Avalanche Current
(Note 1)
70
A
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
417
3.3
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2005 Fairchild Semiconductor Corporation
FDA70N20 Rev. A
1
Min.
Max.
Unit
--
0.3
°C/W
0.24
--
°C/W
--
40
°C/W
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FDA70N20 200V N-Channel MOSFET
UniFET
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDA70N20
FDA70N20
TO-3P
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
200
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.2
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 200V, VGS = 0V
VDS = 160V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.029
0.035
Ω
--
47
--
S
--
3050
3970
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 35A
gFS
Forward Transconductance
VDS = 40V, ID = 35A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
750
980
pF
--
89
130
pF
--
71
150
ns
--
235
480
ns
--
65
140
ns
--
39
88
ns
--
66
86
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100V, ID = 70A
RG = 25Ω
(Note 4, 5)
VDS = 160V, ID = 70A
VGS = 10V
(Note 4, 5)
--
19
--
nC
--
26
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
70
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
280
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 70A
--
--
1.4
V
trr
Reverse Recovery Time
--
175
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 70A
dIF/dt =100A/µs
--
4.1
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.533mH, IAS = 70A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 70A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA70N20 Rev. A
2
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FDA70N20 200V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
Bottom : 6.0 V
Top :
ID, Drain Current [A]
2
10
ID, Drain Current [A]
2
10
1
10
o
150 C
o
1
25 C
10
o
-55 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
0
10
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
0
-1
0
10
10
1
10
10
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],Drain-Source On-Resistance
0.06
0.05
VGS = 10V
0.04
VGS = 20V
0.03
※ Note : TJ = 25℃
2
10
1
10
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0
0
25
50
75
100
125
150
175
10
200
0.2
0.4
ID, Drain Current [A]
1.0
1.2
1.4
1.6
1.8
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Ciss
4000
2000
0.8
Figure 6. Gate Charge Characteristics
8000
6000
0.6
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Capacitances [pF]
25℃
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
10
VDS = 40V
VDS = 100V
8
VDS = 160V
6
4
2
※ Note : ID = 70A
0
-1
10
0
10
0
1
10
FDA70N20 Rev. A
0
10
20
30
40
50
60
70
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDA70N20 200V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
? Notes :
1. VGS = 10 V
0.5
2. ID = 35 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
o
150
200
Figure 10. Maximum Drain Current
vs. Case Temperature
3
80
10
10 µs
70
100 µs
2
10
DC
1
10
60
1 ms
10 ms
100 ms
ID, Drain Current [A]
ID, Drain Current [A]
100
o
Figure 9. Safe Operating Area
Operation in This Area
is Limited by R DS(on)
0
10
? Notes :
o
1. TC = 25 C
-1
10
50
40
30
20
o
2. TJ = 150 C
10
3. Single Pulse
-2
10
50
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
0
10
1
0
25
2
10
10
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
-1
0 .2
PDM
0 .1
t1
0 .0 5
0 .0 2
10
-2
10
0 .0 1
-5
s in g le p u ls e
10
-4
10
-3
t2
※ N o te s :
1 . Z θ J C( t) = 0 .3 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
FDA70N20 Rev. A
4
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FDA70N20 200V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDA70N20 200V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
FDA70N20 Rev. A
VDS (t)
VDD
DUT
10V
ID (t)
tp
5
Time
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FDA70N20 200V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
FDA70N20 Rev. A
6
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FDA70N20 200V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
FDA70N20 Rev. A
7
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I14
8
FDA70N20 Rev. A
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FDA70N20 200V N-Channel MOSFET
TRADEMARKS