UniFETTM FDP20N50F / FDPF20N50FT N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω Features • RDS(on) = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A Description • Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( Typ. 27pF) • Fast reverse recovery switching of built-in diode This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant D G G D S TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP20N50F FDPF20N50FT 500 Units V ±30 -Continuous (TC = 25oC) V 20 20* 12.9 12.9* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 25 mJ dv/dt Peak Diode Recovery dv/dt -Continuous (TC = 100oC) - Pulsed (Note 1) 80* Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC A 1110 (Note 3) (TC = 25oC) PD TL 80 (Note 2) A mJ 20 V/ns 250 38.5 W 2.0 0.3 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP20N50F FDPF20N50FT RθJC Symbol Thermal Resistance, Junction to Case Parameter 0.5 3.3 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2011 Fairchild Semiconductor Corporation FDP20N50F / FDPF20N50FT Rev. C1 1 Units o C/W www.fairchildsemi.com FDP20N50F / FDPF20N50FT N-Channel MOSFET November 2011 Device Marking FDP20N50F Device FDP20N50F Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF20N50FT FDPF20N50FT TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V - 0.7 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 500V, VGS = 0V - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.22 0.26 Ω - 25 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 10A gFS Forward Transconductance VDS = 20V, ID = 10A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 20A VGS = 10V (Note 4, 5) - 2550 3390 pF - 350 465 pF - 27 40 pF - 50 65 nC - 14 - nC - 20 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 20A RG = 25Ω (Note 4, 5) - 45 100 ns - 120 250 ns - 100 210 ns - 60 130 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 20 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 80 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 20A - - 1.5 V trr Reverse Recovery Time 154 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 20A dIF/dt = 100A/μs - 0.5 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP20N50F / FDPF20N50FT Rev. C1 2 www.fairchildsemi.com FDP20N50F / FDPF20N50FT N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 Figure 2. Transfer Characteristics 100 o ID,Drain Current[A] ID,Drain Current[A] 80 1 150 C o 25 C 10 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 10 20 4 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.5 400 0.4 VGS = 10V 0.3 VGS = 20V 0.2 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.1 *Note: TJ = 25 C 0 25 50 ID, Drain Current [A] 1 0.0 75 Figure 5. Capacitance Characteristics 4500 3000 1500 0 0.1 Ciss *Note: 1. VGS = 0V 2. f = 1MHz Crss 1 10 VDS, Drain-Source Voltage [V] FDP20N50F / FDPF20N50FT Rev. C1 2.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Coss 2. 250μs Pulse Test 0.5 1.0 1.5 2.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 6000 Capacitances [pF] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.3 0.1 8 6 4 2 0 50 3 VDS = 100V VDS = 250V VDS = 400V *Note: ID = 20A 0 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FDP20N50F / FDPF20N50FT N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDP20N50F 200 100 1.1 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1 ms 10 ms 10 100 ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: 0.1 o 1. TC = 25 C o 0.01 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 800 Figure 9. Maximum Safe Operating Area - FDPF20N50FT Figure 10. Maximum Drain Current vs. Case Temperature 200 100 25 40μs 100μs 10 20 ID, Drain Current [A] ID, Drain Current [A] 10 μs 100 μs 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 o 15 10 5 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP20N50F Thermal Response [ZθJC] 1 0.5 0.1 0.2 PDM 0.1 0.02 t2 *Notes: 0.01 o 1. ZθJC(t) = 0.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) single pulse 0.002 -5 10 t1 t2 t1 0.05 0.01 PDM -4 10 -3 10 -2 -1 10 10 0 10 1 10 Rectangular Pulse Duration [sec] FDP20N50F / FDPF20N50FT Rev. C1 4 www.fairchildsemi.com FDP20N50F / FDPF20N50FT N-Channel MOSFET Typical Performance Characteristics (Continued) FDP20N50F / FDPF20N50FT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF20N50FT Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 o 1. ZθJC(t) = 3.3 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -4 10 FDP20N50F / FDPF20N50FT Rev. C1 t2 *Notes: -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 5 2 10 3 10 www.fairchildsemi.com FDP20N50F / FDPF20N50FT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP20N50F / FDPF20N50FT Rev. C1 6 www.fairchildsemi.com FDP20N50F / FDPF20N50FT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP20N50F / FDPF20N50FT Rev. C1 7 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 FDP20N50F / FDPF20N50FT Rev. C1 8 www.fairchildsemi.com FDP20N50F / FDPF20N50FT N-Channel MOSFET Mechanical Dimensions FDP20N50F / FDPF20N50FT N-Channel MOSFET Mechanical Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDP20N50F / FDPF20N50FT Rev. C1 9 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only Rev. I31 FDP20N50F / FDPF20N50FT Rev. C1 10 www.fairchildsemi.com FDP20N50F / FDPF20N50FT N-Channel MOSFET TRADEMARKS