QFET
®
FQP11N40C/FQPF11N40C
400V N-Channel MOSFET
Features
Description
• 10.5 A, 400V, RDS(on) =
0.5 Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
{
●
◀
G{
TO-220
G DS
FQP Series
▲
●
●
TO-220F
GD S
FQPF Series
{
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
FQP11N40C
FQPF11N40C
400
Units
V
- Continuous (TC = 25°C)
10.5
10.5 *
A
- Continuous (TC = 100°C)
6.6
6.6 *
A
42 *
A
IDM
Drain Current
VGSS
Gate-Source Voltage
- Pulsed
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
dv/dt
PD
Power Dissipation (TC = 25°C)
(Note 1)
42
± 30
V
(Note 2)
360
mJ
(Note 1)
11
A
Repetitive Avalanche Energy
(Note 1)
13.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
135
44
W
1.07
0.35
W/°C
-55 to +150
°C
300
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FQP11N40C
FQPF11N40C
Units
RθJC
Thermal Resistance, Junction-to-Case
0.93
2.86
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2008 Fairchild Semiconductor Corporation
FQP11N40C/FQPF11N40C Rev. C1
1
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
May 2008
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP11N40C
FQP11N40C
TO-220
--
--
50
FQPF11N40C
FQPF11N40C
TO-220F
--
--
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
400
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.54
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
--
--
1
µA
VDS = 320 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.25 A
--
0.43
0.53
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 5.25 A
--
7.1
--
S
--
840
1090
pF
--
250
325
pF
--
85
110
pF
--
14
40
ns
--
89
190
ns
--
81
170
ns
--
81
170
ns
--
28
35
nC
--
4
--
nC
--
15
--
nC
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 200 V, ID = 10.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = 320 V, ID = 10.5 A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
42
A
VSD
Drain-Source Diode Forward Voltage
--
--
1.4
V
--
290
--
ns
--
2.4
--
µC
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 10.5 A
VGS = 0 V, IS = 10.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQP11N40C/FQPF11N40C Rev. C1
2
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
ID, Drain Current [A]
1
10
150°C
ID, Drain Current [A]
1
10
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
Notes :
1. 250µs Pulse Test
2. TC = 25°C
-55°C
25°C
0
10
Notes :
1. VDS = 40V
2. 250µs Pulse Test
-1
-1
10
0
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
VGS = 10V
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
2.0
1.5
1.0
VGS = 20V
0.5
Note : TJ = 25°C
1
10
0
10
150°C
Notes :
1. VGS = 0V
25°C
2. 250µs Pulse Test
-1
0
5
10
15
20
25
30
35
10
40
0.2
0.4
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1.2
1.4
12
Crss = Cgd
Ciss
1200
Coss
1000
800
600
VDS = 100V
10
VGS, Gate-Source Voltage [V]
1400
Capacitance [pF]
1.0
Coss = Cds + Cgd
1600
Notes ;
1. VGS = 0 V
Crss
2. f = 1 MHz
400
200
0
-1
10
0.8
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
1800
0.6
VSD, Source-Drain voltage [V]
VDS = 250V
8
VDS = 400V
6
4
2
Note : ID = 10.5A
0
0
10
1
10
5
10
15
20
25
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FQP11N40C/FQPF11N40C Rev. C1
0
3
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
0.8
-100
-50
0
50
100
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 5.25 A
150
0.0
-100
200
Figure 9-1. Maximum Safe Operating Area
of FQP11N40C
50
100
10 µs
ID, Drain Current [A]
ID, Drain Current [A]
10 µs
100 µs
1 ms
1
200
Operation in This Area
is Limited by R DS(on)
2
10
10
150
Figure 9-2. Maximum Safe Operating Area
of FQPF11N40C
Operation in This Area
is Limited by R DS(on)
2
0
TJ, Junction Temperature [°C]
TJ, Junction Temperature [°C]
10
-50
10 ms
100 ms
DC
0
10
Notes :
1. TC = 25°C
100 µs
1
1 ms
10
10 ms
100 ms
DC
0
10
Notes :
1. TC = 25°C
2. TJ = 150°C
2. TJ = 15°C
3. Single Pulse
3. Single Pulse
-1
-1
10
0
1
10
2
10
10
3
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
12
ID, Drain Current [A]
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [°C]
FQP11N40C/FQPF11N40C Rev. C1
4
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. ransient Thermal Response Curve of FQP11N40C
10
0
0 .2
10
Z
N o te s :
1 . Z θ J C ( t ) = 0 .9 3 ° C / W M a x .
0 .1
-1
2 . D u t y F a c to r , D = t 1 /t 2
0 .0 5
3 . T JM - T C = P D M * Z θJC (t)
0 .0 2
PDM
0 .0 1
θJC
(t), Thermal Response
D = 0 .5
s in g le p u ls e
10
t1
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Zθ JC(t), Thermal Response
Figure 11-2. ransient Thermal Response Curve of FQPF11N40C
10
D = 0 .5
0
0 .2
※ N o te s :
1 . Z θ J C( t) = 2 .8 6 ℃ / W M a x .
2 . D u t y F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .1
0 .0 5
10
-1
0 .0 2
0 .0 1
10
t1
s in g le p u ls e
-2
10
PDM
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
FQP11N40C/FQPF11N40C Rev. C1
5
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
FQP11N40C/FQPF11N40C Rev. C1
VDS (t)
VDD
DUT
10V
ID (t)
tp
6
Time
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
FQP11N40C/FQPF11N40C Rev. C1
7
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
FQP11N40C/FQPF11N40C Rev. C1
8
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Mechanical Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FQP11N40C/FQPF11N40C Rev. C1
9
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Mechanical Dimensions
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
™
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
tm
®
PDP-SPM™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
The Power Franchise®
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
tm
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2.
A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
10
FQP11N40C/FQPF11N40C Rev. C1
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
TRADEMARKS