699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1(Typ.) = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220 2.Collector R 1 ≅ 2000Ω 3.Emitter R B ≅ 700Ω E Absolute Maximum Ratings Value Units VCBO Symbol Collector-Base Voltage Parameter 600 V VCEO Collector-Emitter Voltage 275 V VEBO Emitter-Base Voltage 10 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 6 A IB Base Current (DC) 0.5 A PC Collector Dissipation (TC = 25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter BVCBO Collector-Base Breakdown Voltage Conditions Min. Typ. Max Units IC = 500µA, IE = 0 600 V BVCER Collector-Emitter Breakdown Voltage IC = 1mA, RBE = 330Ω 600 V BVCEO(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB = 50mA, L = 25mH 275 V BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 10 ICBO Collector Cut-off Current VCB = 600V, IE = 0 IEBO Emitter Cut-off Current VEB = 10V, IC = 0 hFE DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 20mA VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 5mA Cob Output Capatitance VE = 10V, IE = 0, f = 1MHz ©2004 Fairchild Semiconductor Corporation 699440 Rev. A 1 V 1000 1000 0.1 mA 0.1 mA 5000 1.5 6.0 110 V V pF www.fairchildsemi.com Figure 1. Static Characterstic Figure 2. DC Current Gain 5 10k o Ta = 75 C o 4 Ta = 125 C DC CURRENT GAIN IC [A], COLLECTOR CURRENT IB = 1.4mA 3 IB = 0.6mA IB = 0.4mA 2 1k o Ta = 25 C o Ta = - 25 C 100 1 VCE = 5V IB = 0 0 0 1 2 3 4 5 6 10 0.1 7 1 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 100 100 IC = 400 IB IC = 400 IB VBE(sat), SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 IC [A], COLLECTOR CURRENT o Ta = 125 C 10 o Ta = 75 C o 1 Ta = 25 C o Ta = - 25 C 0.1 0.1 1 10 o Ta = 125 C o Ta = 75 C o 1 Ta = 25 C o Ta = - 25 C 0.1 0.1 10 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 5. RB, & R1 vs. Ambient Temperature Figure 6. Output Capacitance 10k 1000 Cob [pF], OUPUT CAPACITANCE RB & R1 [Ω ], RESISTANCE f = 1MHz, IE = 0 R1 1k RB 100 -50 -25 0 25 50 75 100 125 10 150 1 o TA [ C], AMBIENT TEMPERATURE 10 100 VCB [V], COLLECTOR-BASE VOLTAGE 2 699440 Rev. A 100 www.fairchildsemi.com 699440 High Voltage Power Darlington Transistor Typical Performance Characteristics 699440 High Voltage Power Darlington Transistor Typical Performance Characteristics (Continued) Figure 6. Power Derating PC [W], COLLECTOR POWER DISSIPATION 50 45 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC [ C], CASE TEMPERATURE 3 699440 Rev. A www.fairchildsemi.com 699440 High Voltage Power Darlington Transistor Mechanical Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters 4 699440 Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14 5 699440 Rev. A www.fairchildsemi.com 699440 High Voltage Power Darlington Transistor TRADEMARKS