MOTOROLA MCM69D618TQ8

MOTOROLA
Order this document
by MCM69D618/D
SEMICONDUCTOR TECHNICAL DATA
MCM69D618
64K x 18 Bit Synchronous
Dual I/O, Dual Address SRAM
The MCM69D618 is a 1M–bit static random access memory, organized as 64K
words of 18 bits. It features common data input and data output buffers and
incorporates input and output registers on–board with high speed SRAM.
The MCM69D618 allows the user to concurrently perform reads, writes, or
pass–through cycles in combination on the two data ports. The two address ports
(AX, AY) determine the read or write locations for their respective data ports
(DQX, DQY).
The synchronous design allows for precise cycle control with the use of an
external single clock (K). All signal pins except output enables (GX, GY) are
registered on the rising edge of clock (K).
The pass–through feature allows data to be passed from one port to the other,
in either direction. The PTX input must be asserted to pass data from port X to
port Y. The PTY will likewise pass data from port Y to port X. A pass–through
operation takes precedence over a read operation.
For the case when AX and AY are the same, certain protocols are followed. If
both ports are read, the reads occur normally. If one port is written and the other
is read, the read from the array will occur before the data is written. If both ports
are written, only the data on DQY will be written to the array.
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TQ PACKAGE
100 LEAD TQFP
CASE 983A–01
Single 3.3 V ± 5% Power Supply
Fast Access Times: 6/8 ns Max
Throughput of 1.49 Gigabits/Second
Single Clock Operation
Address, Data Input, E1, E2, PTX, PTY, WX, WY, and Data Output Registers
On–Chip
83 MHz Maximum Clock Frequency
Self Timed Write
Two Bi–Directional Data Buses
Can be Configured as Separate I/O
Pass–Through Feature
Asynchronous Output Enables (GX, GY)
LVTTL Compatible I/O
Concurrent Reads and Writes
100–Pin TQFP Package
Suggested Applications
— ATM
— Ethernet Switches
— Cell/Frame Buffers — SNA Switches
— Routers
— Shared Memory
Product Family Configurations
Part
Number
MCM69D536
MCM69D618
Dual
Address
n
n
MCM67Q709A
MCM67Q909
Single
Address
Note 1
Note 1
n
n
Dual
I/O
n
n
Separate
I/O
Configuration
Note 2
32K x 36
VDD
3.3 V
Note 2
64K x 18
3.3 V
128K x 9
5.0 V
512K x 9
5.0 V
n
n
NOTES:
1. Tie AX and AY address ports together for the part to function as a single address part.
2. Tie GX high for DQX to be inputs and tie WY high and GY low for DQY to be outputs.
REV 5
1/16/98

Motorola, Inc. 1998
MOTOROLA
FAST SRAM
MCM69D618
1
BLOCK DIAGRAM
AX
16
ADDRESS
REGISTER
WX
WRITE X
REGISTER
PTX
PTX
REGISTER
E1
E2
WRITE
DRIVER
SENSE
AMPS
SENSE
AMPS
WRITE
DRIVER
PASS–THROUGH
DATA IN
REGISTER
K
ADDRESS
REGISTER
64K x 18 ARRAY
OUTPUT
REGISTER
OUTPUT
REGISTER
DQX
DQY
DATA IN
REGISTER
16
AY
WRITE Y
REGISTER
WY
PTY
REGISTER
PTY
K
ENABLE
REG 1
ENABLE
REG 2
GX
GY
MCM69D618
2
MOTOROLA FAST SRAM
AX6
AY6
AX7
AY7
K
VDD
VSS
GY
GX
E2
E1
WY
WX
PTY
PTX
AX8
AY8
AX9
AY9
AX15
PIN ASSIGNMENT
VDD
VSS
AY15
VSS
VDD
DQX8
DQY8
DQX7
DQY7
VSS
VDD
DQX6
DQY6
DQX5
DQY5
VSS
VDD
DQY4
DQX4
DQY3
DQX3
VSS
VDD
DQY2
DQX2
DQY1
DQX1
VSS
VDD
DQY0
DQX0
AY14
AY4
AX4
AY3
AX3
AY2
AX2
AY1
AX1
AY0
AX0
VDD
AX10
AY10
AX11
AY11
AX12
AY12
AX13
AY13
AX14
DQX9
DQY9
DQX10
DQY10
VDD
VSS
DQX11
DQY11
DQX12
DQY12
VDD
VSS
DQY13
DQX13
DQY14
DQX14
VDD
VSS
DQY15
DQX15
DQY16
DQX16
VDD
VSS
DQY17
DQX17
AY5
AX5
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
MOTOROLA FAST SRAM
MCM69D618
3
PIN DESCRIPTIONS
Pin Locations
Symbol
Type
Description
40, 38, 36, 34, 32, 30, 100, 98, 85,
83, 42, 44, 46, 48, 50, 81
AX0 –
AX15
Input
Address Port X. Never allow floating addresses for inputs AX0 – AX15.
A pullup resistor is needed.
39, 37, 35, 33, 31, 29, 99, 97, 84, 82,
43, 45, 47, 49, 51, 80
AY0 –
AY15
Input
Address Port Y. Never allow floating addresses for inputs AY0 – AY15.
A pullup resistor is needed.
52, 56, 58, 62, 64, 69, 71, 75, 77,
3, 5, 9, 11, 16, 18, 22, 24, 28
DQX0 –
DQX17
I/O
Data Input/Output Port X.
53, 57, 59, 63, 65, 68, 70, 74, 76,
4, 6, 10, 12, 15, 17, 21, 23, 27
DQY0 –
DQY17
I/O
Data Input/Output Port Y.
90
E1
Input
Synchronous Chip Enable: Active low.
91
E2
Input
Synchronous Chip Enable: Active high.
92
GX
Input
Asynchronous Output Enable Port X Input:
Low — enables output buffers (DQXx pins).
High — DQXx pins are high impedance.
93
GY
Input
Asynchronous Output Enable Port Y Input:
Low — enables output buffers (DQYx pins).
High — DQYx pins are high impedance.
96
K
Input
Clock: This signal registers the address, data in, and all control signals
except G.
86
PTX
Input
Pass–Through Port X.
87
PTY
Input
Pass–Through Port Y.
88
WX
Input
Synchronous Write Enable Port X.
89
WY
Input
Synchronous Write Enable Port Y.
1, 7, 13, 19, 25, 41, 54, 60, 66, 72, 78, 95
VDD
Supply
+ 3.3 V Power Supply.
2, 8, 14, 20, 26, 55, 61, 67, 73, 79, 94
VSS
Supply
Ground.
MCM69D618
4
MOTOROLA FAST SRAM
TRUTH TABLE (See Notes 1 through 5)
Input at tn Clock
O
Operation
i N
Number
b
E1
E2
WX
WY
PTX
PTY
Operation
1
H
X
X
X
X
X
Deselected
2
X
L
X
X
X
X
Deselected
3
L
H
0
X
X
X
Write X Port
4
L
H
X
0
X
X
Write Y Port
5
L
H
X
X
0
X
Pass–Through X to Y
6
L
H
X
X
X
0
Pass–Through Y to X
7
L
H
1
X
1
1
Read X
8
L
H
X
1
1
1
Read Y
NOTES:
1. GX/GY must be controlled to avoid bus contention issues during write and pass–through cycles.
2. Operation numbers 3 – 6 can be used in any combination.
3. Operation numbers 4 and 7, 3 and 8, 7 and 8 can be combined.
4. Operation number 5 can not be combined with operation number 7 or 8 because pass–through takes precedence over a read operation.
5. Operation number 6 can not be combined with operation number 7 or 8 because pass–through takes precedence over a read operation.
tn
tn + 1
K
ADDRESS & CONTROL
VALID
PIPELINED READ ACCESS
DATA INPUT D
VALID
PASS–THROUGH
DATA OUTPUT Q
VALID
ABSOLUTE MAXIMUM RATINGS (See Note)
Symbol
Value
Unit
VDD
– 0.5 to + 4.6
V
Vin, Vout
– 0.5 to VDD + 0.5
V
Output Current
Iout
± 20
mA
Power Dissipation
PD
TBD
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Tstg
– 55 to + 125
°C
Rating
Power Supply Voltage
Voltage Relative to VSS for Any Pin
Except VDD
Storage Temperature — Plastic
This is a synchronous device. All synchronous inputs must meet specified setup and hold
times with stable logic levels for ALL rising
edges of clock (K) while the device is selected.
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maximum rated voltages to these high–impedance
circuits.
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
MOTOROLA FAST SRAM
MCM69D618
5
PACKAGE THERMAL CHARACTERISTICS (See Note 1)
Symbol
TQFP
Unit
Notes
RθJA
40
25
°C/W
2
Junction to Board (Bottom)
RθJB
17
°C/W
3
Junction to Case (Top)
RθJC
9
°C/W
4
Rating
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ± 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VDD
3.135
3.465
V
Input High Voltage
VIH
2.0
VDD + 0.5**
V
Input Low Voltage
VIL
– 0.5*
0.8
V
Ilkg(I)
—
± 1.0
µA
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Ilkg(O)
—
± 1.0
µA
AC Supply Current (Iout = 0 mA) (VDD = max, f = fmax)
MCM69D618–6 ns
MCM69D618–8 ns
IDDA
—
—
300
300
mA
CMOS Standby Supply Current (Deselected, Clock (K)
Cycle Time ≥ tKHKH, All Inputs Toggling at CMOS Levels
Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
MCM69D618–6 ns
MCM69D618–8 ns
ISB1
—
—
100
100
mA
Output Low Voltage (IOL = + 8.0 mA)
VOL
—
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
VDD
V
Symbol
Max
Unit
Address and Data Input Capacitance
Cin
6
pF
Control Pin Input Capacitance
Cin
6
pF
Cout
8
pF
Output Leakage Current (E = VIH, Vout = 0 to VDD)
* VIL ≥ –1.5 V for t ≤ tKHKH/2.
** VIH ≤ VDD + 1.0 V for t ≤ tKHKH/2.
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 0 to + 70°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Output Capacitance
MCM69D618
6
MOTOROLA FAST SRAM
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ± 5%, TA = 0 to 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 ns
Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V
Output Load . . . . . . . . . . . . . . . . . . Figure 1 Unless Otherwise Noted
READ/WRITE CYCLE TIMING
MCM69D618–6
MCM69D618–8
S b l
Symbol
Min
Max
Min
Max
U i
Unit
N
Notes
Cycle Time
tKHKH
12
—
15
—
ns
1
Clock Access Time
tKHQV
—
6
—
8
ns
Clock Low Pulse Width
tKLKH
4
—
6
—
ns
P
Parameter
Clock High Pulse Width
tKHKL
4
—
6
—
ns
Clock High to Data Output Active
tKHQX1
0
—
0
—
ns
Clock High to Data Output Invalid
tKHQX2
2
—
2
—
ns
Clock High to Data Output High–Z
tKHQZ
—
5
—
5
ns
Output Enable Low to Data Output Valid
tGLQV
—
6
—
8
ns
0
—
ns
2
Output Enable Low to Data Output Low–Z
tGLQX
0
—
Output Enable High to Data Output High–Z
tGHQZ
—
5
—
8
ns
2
Setup Times:
AWR0 – AWR14
ARD0 – ARD14
W
PT
E1, E2
D0 – D35
tAVKH
tAVKH
tWVKH
tPTVKH
tEVKH
tDVKH
2.5
—
3
—
ns
3
Hold Times:
AWR0 – AWR14
ARD0 – ARD14
W
PT
E1, E2
D0 – D35
tKHAX
tKHAX
tKHWX
tKHPTX
tKHEX
tKHDX
0.5
—
1
—
ns
3
3
3
3
3
3, 4
NOTES:
1. All read and write cycles are referenced from K.
2. This parameter is sampled and not 100% tested.
3. This is a synchronous device. All synchronous inputs must meet the specified setup and hold times with stable logic levels for ALL rising
edges of clock (K) while the device is selected.
4. tKHDX minimum for Port Y only extends to 4.0 ns only for the special case when the Y– and X–address are identical on the same rising
clock edge.
RL = 50 Ω
OUTPUT
Z0 = 50 Ω
VL = 1.5 V
Figure 1. AC Test Load
MOTOROLA FAST SRAM
MCM69D618
7
READ CYCLE TIMING FROM BOTH PORTS (WX, WY, PTX, PTY HIGH)
tKHKH
tKLKH
tKHKL
K
tAVKH
AX
PORT X
1
tKHAX
2
3
4
5
6
7
8
9
GX
tGLQV
tKHQV
tGHQZ
tKHQX1
Q(1)
DQX
Q(2)
Q(3)
Q(5)
Q(6)
Q(7)
tGLQX
tEVKH
E
tKHEX
AY
PORT Y
12
13
14
15
16
6
7
19
20
Q(16)
Q(6)
Q(7)
GY
tKHQZ
DQY
Q(12)
Q(13)
Q(14)
tKHQV
NOTE: E Low = E1 Low and E2 High. E High = E1 High or E2 Low.
MCM69D618
8
MOTOROLA FAST SRAM
WRITE CYCLE TIMING TO BOTH PORTS (PTX, PTY HIGH)
tKHKH
tKLKH
tKHKL
K
AX
1
2
3
4
5
6
7
8
9
D(8)
D(9)
19
20
tKHWX
tWVKH
WX
PORT X
GX
tDVKH
DQX
tKHDX
D(2)
D(3)
D(4)
13
14
15
5
6
18
D(14)
D(15)
D(5)
D(6)
D(18)
E
AY
12
WY
PORT Y
GY
DQY
D(19)
PORT Y TAKES PRECEDENCE
OVER PORT X WHEN AX = AY
AND WRITING BOTH PORTS.
NOTE: E Low = E1 Low and E2 High. E High = E1 High or E2 Low.
MOTOROLA FAST SRAM
MCM69D618
9
WRITE TO PORT X AND PASS–THROUGH TO PORT Y (See Note)
tKHKH
tKLKH
tKHKL
K
AX
1
2
3
4
5
6
7
8
9
18
19
20
WX
PORT X
GX
tKHPTX
tPTVKH
PTX
tDVKH
DQX
tKHDX
D(2)
D(3)
D(X)
D(Y)
D(6)
13
14
15
16
17
E
AY
12
WY
PORT Y
GY
PTY
tKHQV
tKHQX2
DQY
tKHQZ
D(3)
D(X)
D(Y)
D(17)
E Low = E1 Low and E2 High. E High = E1 High or E2 Low.
NOTE: The timing diagram is valid for the opposite case as well, i.e., writing to Port Y and passing through to Port X.
MCM69D618
10
MOTOROLA FAST SRAM
COMBINATION READ/WRITE WITH SAME ADDRESS ON EACH PORT
tKHKH
tKLKH
tKHKL
K
AX
TRY TO
WRITE
TRY TO
WRITE
READ
1
2
1
READ
READ
READ
READ
2
READ
3
WX
PORT X
GX
DQX
AY
D(ABC)
D(DEF)
Q(PQR)
WRITE
WRITE
READ
READ
READ
WRITE
1
2
1
2
3
2
Q(XYZ)
READ
Q(JKL)
READ
3
WY
PORT Y
GY
DQY
D(PQR)
D(XYZ)
Q(PQR)
D(JKL)
Q3
Q(JKL)
PORT Y TAKES PRECEDENCE
OVER PORT X WHEN AX = AY
AND WRITING BOTH PORTS.
PTX = PTY = high.
D(Value) = Value is the input to the data port.
Q(Value) = Value is the output from the data port.
MOTOROLA FAST SRAM
MCM69D618
11
ORDERING INFORMATION
(Order by Full Part Number)
MCM 69D618 XX
XX
Motorola Memory Prefix
X
Shipping Method (R = Tape and Reel,
Blank = Rails)
Part Number
Speed (6 = 6ns, 8 = 8 ns)
Package (TQ = TQFP)
Full Part Numbers — MCM69D618TQ6
MCM69D618TQ6R
MCM69D618
12
MCM69D618TQ8
MCM69D618TQ8R
MOTOROLA FAST SRAM
PACKAGE DIMENSIONS
TQFP PACKAGE
100 PIN
CASE 983A–01
4X
e
0.20 (0.008) H A–B D
2X 30 TIPS
e/2
0.20 (0.008) C A–B D
–D–
80
51
50
81
B
E/2
–A–
–X–
B
X=A, B, OR D
–B–
VIEW Y
E1 E
E1/2
BASE
METAL
PLATING
ÉÉÉÉ
ÇÇÇÇ
ÇÇÇÇ
ÉÉÉÉ
b1
31
100
1
30
D1/2
c
D/2
b
D1
D
0.13 (0.005)
2X 20 TIPS
A
q
2
0.10 (0.004) C
–H–
–C–
SEATING
PLANE
q
3
VIEW AB
S
S
q
1
0.25 (0.010)
R2
A2
A1
R1
L2
L
L1
VIEW AB
C A–B
S
D
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF
THE PARTING LINE.
4. DATUMS –A–, –B– AND –D– TO BE DETERMINED AT
DATUM PLANE –H–.
5. DIMENSIONS D AND E TO BE DETERMINED AT
SEATING PLANE –C–.
6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS 0.25
(0.010) PER SIDE. DIMENSIONS D1 AND B1 DO
INCLUDE MOLD MISMATCH AND ARE DETERMINED AT
DATUM PLANE –H–.
7. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. DAMBAR PROTRUSION SHALL NOT
CAUSE THE b DIMENSION TO EXCEED 0.45 (0.018).
GAGE PLANE
q
DIM
A
A1
A2
b
b1
c
c1
D
D1
E
E1
e
L
L1
L2
S
R1
R2
q
q
q
q
MOTOROLA FAST SRAM
M
SECTION B–B
0.20 (0.008) C A–B D
0.05 (0.002)
c1
1
2
3
MILLIMETERS
MIN
MAX
–––
1.60
0.05
0.15
1.35
1.45
0.22
0.38
0.22
0.33
0.09
0.20
0.09
0.16
22.00 BSC
20.00 BSC
16.00 BSC
14.00 BSC
0.65 BSC
0.45
0.75
1.00 REF
0.50 REF
0.20
–––
0.08
–––
0.08
0.20
0_
7_
0_
–––
11 _
13 _
11 _
13 _
INCHES
MIN
MAX
–––
0.063
0.002
0.006
0.053
0.057
0.009
0.015
0.009
0.013
0.004
0.008
0.004
0.006
0.866 BSC
0.787 BSC
0.630 BSC
0.551 BSC
0.026 BSC
0.018
0.030
0.039 REF
0.020 REF
0.008
–––
0.003
–––
0.003
0.008
0_
7_
0_
–––
11 _
13 _
11 _
13 _
MCM69D618
13
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado, 80217. 1-303-675-2140 or 1-800-441-2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,
4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Mfax : [email protected] – TOUCHTONE 1-602-244-6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Motorola Fax Back System
– US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
– http://sps.motorola.com /mfax /
HOME PAGE : http://motorola.com/sps /
CUSTOMER FOCUS CENTER: 1-800-521-6274
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