Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability C G G C Rge E E CASE 221A–06, Style 9 TO–220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES CLAMPED Vdc Collector–Gate Voltage VCGR CLAMPED Vdc VGE CLAMPED Vdc IC 20 Adc ICR 12 Apk PD 150 Watts ESD 3.5 kV TJ, Tstg – 55 to 175 °C RqJC RqJA 1.0 62.5 °C/W TL 275 °C Gate–Emitter Voltage Collector Current — Continuous @ TC = 25°C Reversed Collector Current – pulse width t 100 ms Total Power Dissipation @ TC = 25°C (TO–220) Electrostatic Voltage — Gate–Emitter Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds 10 lbfin (1.13 Nm) Mounting Torque, 6–32 or M3 screw UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C @ Starting TJ = 150°C EAS mJ 550 150 SMARTDISCRETES and TMOS are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. REV 1 TMOS Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MGP20N40CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 370 405 430 — — — — 500 100 Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (IClamp = 10 mA, TJ = –40 to 150°C) BVCES Zero Gate Voltage Collector Current (VCE = 350 V, VGE = 0 V, TJ = 150°C) (VCE = 15 V, VGE = 0 V, TJ = 150°C) ICES Resistance Gate–Emitter (TJ = –40 to 150°C) RGE 10k 16k 30k Gate–Emitter Breakdown Voltage (IG = 2 mA) BVGES 11 13 15 "V ICES — — 50 mA BVCER 26 40 120 V 1.0 0.75 1.7 — 2.2 1.8 — — — 1.1 1.4 1.4 1.4 1.9 1.8 gfs 10 18 — S pF Collector–Emitter Reverse Leakage (VCE = –15 V, TJ = 150°C) Collector–Emitter Reversed Breakdown Voltage (IE = 75 mA) Vdc mA W ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE, IC = 1 mA) (VCE = VGE, IC = 1 mA, TJ = 150°C) VGE(th) Collector–Emitter On–Voltage (VGE = 5 V, IC = 5 A) (VGE = 5 V, IC = 10 A) (VGE = 5 V, IC = 10 Adc, TJ = 150°C) VCE(on) Forward Transconductance (VCE u 5.0 V, IC = 10 A) V V DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance Ciss — 2800 — Coss — 200 — Crss — 25 — SWITCHING CHARACTERISTICS (1) Total Gate Charge Gate–Emitter Charge Qg — 45 80 Qgs — 8.0 — Qgd — 20 — ( CC = 320 V,, IC = 20 A,, (V L = 200 mH, RG = 1 KW) td(off) — 14 — tf — 4.0 — ((VCC = 14 V,, IC = 20 A,, L = 200 mH, RG = 1 KW) td(on) — 2.0 — tr — 6.0 — (VCC = 280 V, V IC = 20 A, A VGE = 5 V) Gate–Collector Charge Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time nC µs µs (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N40CL TYPICAL ELECTRICAL CHARACTERISTICS 40 VGE = 10 V I C , COLLECTOR CURRENT (AMPS) TJ = 25°C 30 4V 20 10 3V 0 0 2 4 6 8 I C , COLLECTOR CURRENT (AMPS) 20 3V 10 0 1 2 3 4 5 6 7 8 9 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25°C Figure 2. Output Characteristics, TJ = 125°C VCE = 10 V 30 20 TJ = 125°C 25°C 10 1 4V 0 40 0 TJ = 125°C 5V 30 10 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (AMPS) 40 5V VGE = 10 V 2 3 4 5 10 2.2 VGE = 5 V 2.0 IC = 20 A 1.8 15 A 1.6 10 A 1.4 1.2 1.0 –50 50 0 100 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature 150 10000 TJ = 25°C C, CAPACITANCE (pF) VGE = 0 V Ciss 1000 Coss 100 Crss 10 1.0 0 25 50 75 100 125 150 175 200 COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 5. Capacitance Variation Motorola TMOS Power MOSFET Transistor Device Data 3 Qg 6 Qgs Qgd 4 2 20 10 30 20 20 TF 10 0 1000 2000 10 3000 4000 Figure 7. Total Switching Losses versus Gate Temperature 30 Td(off) 20 3 VDD = 320 V VGE = 5 V TJ = 25°C IC = 20 A TF 10 1000 2000 3000 4000 2 1 0 5000 6 26 VCC = 320 V VGE = 5 V RG = 1000 W L = 200 mH IC = 20 A 24 22 Td(off) 20 Eoff 18 16 14 TF 12 25 50 75 100 RG, GATE RESISTANCE (OHMS) TC, CASE TEMPERATURE (°C) Figure 8. Total Switching Losses versus Gate Resistance Figure 9. Total Switching Losses versus Case Temperature Eoff 15 Td(off) 10 15 10 SWITCHING TIME ( m S) 20 4 125 20 25 VCC = 320 V VGE = 5 V RG = 1000 W L = 200 mH TJ = 125°C 0 5000 SWITCHING TIME ( m S) 4 SWITCHING TIME ( m S) TOTAL SWITCHING ENERGY LOSSES (mJ) 30 0 5 40 30 Figure 6. Gate–to–Emitter and Collector–to–Emitter Voltage vs Total Charge Eoff 20 Td(off) RG, GATE RESISTANCE (OHMS) 25 TOTAL SWITCHING ENERGY LOSSES (mJ) 40 40 6 0 50 Eoff Qg, TOTAL GATE CHARGE (nC) 40 0 60 VDD = 320 V VGE = 5 V TJ = 125°C IC = 20 A 50 TOTAL SWITCHING ENERGY LOSSES (mJ) 0 60 LATCH CURRENT (AMPS) 0 TJ = 25°C IC = 20 A 50 3 mH 16 12 10 mH 8.0 4.0 TF 5 4 TOTAL SWITCHING ENERGY LOSSES (mJ) 8 SWITCHING TIME ( mS) VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) MGP20N40CL 5 10 15 5 20 0 0 25 50 75 100 125 IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) TEMPERATURE (°C) Figure 10. Total Switching Losses versus Collector Current Figure 11. Latch Current versus Temperature Motorola TMOS Power MOSFET Transistor Device Data MGP20N40CL r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 1.0E – 05 1.0E – 04 1.0E – 03 1.0E – 02 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 1.0E – 01 1.0E+00 1.0E+01 t, TIME (s) Figure 12. Thermal Response PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U H K Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A–06 (TO–220AB) ISSUE Y Motorola TMOS Power MOSFET Transistor Device Data 5 MGP20N40CL Motorola reserves the right to make changes without further notice to any products herein. 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