MOTOROLA MGY20N120D

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by MGY20N120D/D
SEMICONDUCTOR TECHNICAL DATA
 Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
IGBT & DIODE IN TO–264
20 A @ 90°C
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
•
•
•
•
•
•
Industry Standard High Power TO–264 Package (TO–3PBL)
High Speed Eoff: 160 mJ per Amp typical at 125°C
High Short Circuit Capability – 10 ms minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
Robust RBSOA
C
G
G
E
C
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
1200
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
VCGR
1200
Vdc
Gate–Emitter Voltage — Continuous
VGE
±20
Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
IC25
IC90
ICM
28
20
56
Adc
PD
174
1.39
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
tsc
10
ms
RθJC
RθJC
RθJA
0.7
1.1
35
°C/W
TL
260
°C
Rating
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
Apk
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
TMOS
 Motorola
Motorola, Inc.
1996
Power MOSFET Transistor Device Data
1
MGY20N120D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
1200
—
—
870
—
—
—
—
—
—
100
2500
—
—
250
—
—
—
3.00
2.36
2.90
3.54
—
4.99
4.0
—
6.0
10
8.0
—
mV/°C
gfe
—
12
—
Mhos
Cies
—
1876
—
pF
Coes
—
208
—
Cres
—
31
—
td(on)
—
88
—
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
BVCES
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
Vdc
mV/°C
µAdc
nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
VCE(on)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
tr
—
103
—
td(off)
—
190
—
tf
—
284
—
Turn–Off Switching Loss
Eoff
—
1.65
3.75
Turn–On Switching Loss
Eon
—
2.42
7.68
Total Switching Loss
Ets
—
4.07
11.43
td(on)
—
83
—
tr
—
107
—
td(off)
—
216
—
tf
—
494
—
Turn–Off Switching Loss
Eoff
—
3.19
—
Turn–On Switching Loss
Eon
—
4.26
—
Total Switching Loss
Ets
—
7.45
—
QT
—
63
—
Q1
—
20
—
Q2
—
27
—
—
—
—
2.92
1.73
3.67
3.59
—
4.57
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
Fall Time
Gate Charge
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc)
ns
mJ
ns
mJ
nC
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125°C)
(IEC = 20 Adc)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
VFEC
Vdc
(continued)
Motorola TMOS Power MOSFET Transistor Device Data
MGY20N120D
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
trr
—
114
—
ns
ta
—
74
—
tb
—
40
—
QRR
—
0.68
—
µC
trr
—
224
—
ns
ta
—
149
—
tb
—
75
—
QRR
—
2.40
—
—
13
—
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
(IF = 20 Adc, VR = 720 Vdc,
dIF/dt = 150 A/µs)
Reverse Recovery Stored Charge
Reverse Recovery Time
(IF = 20 Adc, VR = 720 Vdc,
dIF/dt = 150 A/µs, TJ = 125°C)
Reverse Recovery Stored Charge
µC
INTERNAL PACKAGE INDUCTANCE
LE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
nH
TYPICAL ELECTRICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (AMPS)
60
VGE = 20 V
TJ = 25°C
50
17.5 V
40
12.5 V
30
20
10 V
10
0
0
2
4
6
50
40
12.5 V
30
10 V
20
10
0
8
0
2
TJ = 125°C
40
20
25°C
8
9
10
11
12
13
14
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
Motorola TMOS Power MOSFET Transistor Device Data
15
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
VCE = 10 V
250 µs PULSE WIDTH
7
6
8
Figure 2. Output Characteristics, TJ = 125°C
60
6
4
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
5
15 V
17.5 V
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0
VGE = 20 V
TJ = 125°C
15 V
IC, COLLECTOR CURRENT (AMPS)
60
4
VGE = 15 V
250 µs PULSE WIDTH
IC = 20 A
3
15 A
10 A
2
1
– 50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
3
MGY20N120D
10000
10000
VGE = 0 V
TJ = 25°C
TJ = 25°C
Cies
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
Cies
1000
Coes
100
Cres
1000
Coes
100
Cres
0
5
15
10
20
150
100
200
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 5b. High Voltage Capacitance
Variation
TOTAL SWITCHING ENERGY LOSSES (mJ)
QT
14
12
10
Q1
8
Q2
6
TJ = 25°C
IC = 20 A
4
2
0
0
5
10 15 20
25 30 35 40
6
5
IC = 25 A
4
15 A
3
10 A
2
1
0
45 50 55 60 65 70
VCC = 720 V
VGE = 15 V
TJ = 25°C
10
15
20
25
30
35
45
40
Qg, TOTAL GATE CHARGE (nC)
RG, GATE RESISTANCE (OHMS)
Figure 6. Gate–to–Emitter and Collector–to–Emitter
Voltage versus Total Charge
Figure 7. Total Switching Losses versus
Gate Resistance
5
TOTAL SWITCHING ENERGY LOSSES (mJ)
50
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
16
VCC = 720 V
VGE = 15 V
RG = 20 Ω
4
IC = 20 A
3
15 A
2
10 A
1
0
4
10
25
TOTAL SWITCHING ENERGY LOSSES (mJ)
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
10
25
50
75
100
125
150
50
5
VCC = 720 V
VGE = 15 V
RG = 20 Ω
TJ = 125°C
4
3
2
1
10
12
14
16
18
TC, CASE TEMPERATURE (°C)
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 8. Total Switching Losses versus
Case Temperature
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
20
Motorola TMOS Power MOSFET Transistor Device Data
40
IC, COLLECTOR–TO–EMITTER CURRENT (A)
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
MGY20N120D
30
TJ = 125°C
20
TJ = 25°C
10
0
0
1
2
3
4
5
100
10
1
0.1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
Figure 11. Reverse Biased
Safe Operating Area
1.0
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E+00
1.0E+01
t, TIME (s)
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5
MGY20N120D
PACKAGE DIMENSIONS
0.25 (0.010)
M
T B
M
–Q–
–B–
–T–
C
E
U
N
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
A
1
R
2
L
3
–Y–
P
K
W
F 2 PL
G
J
H
D 3 PL
0.25 (0.010)
M
Y Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
MIN
MAX
2.8
2.9
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.0
11.4
3.95
4.75
2.2
2.6
3.1
3.5
2.15
2.35
6.1
6.5
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.433
0.449
0.156
0.187
0.087
0.102
0.122
0.137
0.085
0.093
0.240
0.256
0.110
0.125
STYLE 5:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
S
CASE 340G–02
TO–264
ISSUE E
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6
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*MGY20N120D/D*
MGY20N120D/D
Motorola TMOS Power MOSFET Transistor
Device Data