Order this document by MMG05N60D/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. IGBT 0.5 A @ 25°C 600 V • • • • Built–In Free Wheeling Diode Built–In Gate Protection Zener Diodes Industry Standard Package (SOT223) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA 4 C 1 2 3 1=G 2=4=C 3=E G E CASE 318E–04 STYLE 13 TO–261A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameters Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VCGR ± 15 Vdc IC25 IC90 ICM 0.5 0.3 2.0 Adc PD 1.0 Watt TJ, Tstg – 55 to 150 °C RθJC RθJA 30 150 °C/W TL 260 °C Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C) Single Pulse Drain–to–Source Avalanche Energy – Starting @ TC = 25°C Energy – Starting @ TC = 125°C VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W EAS mJ 125 40 (1) Pulse width is limited by maximum junction temperature repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. REV 2 IGBT Motorola Motorola, Inc. 1998 Device Data 1 MMG05N60D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 600 — 680 0.7 — — Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) V(BR)CES Vdc V/°C µAdc Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C) (VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C) ICES ICES — — 0.1 5.0 5.0 50 Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc) IGES — 10 100 — — 1.6 1.5 2.0 — 3.5 — — 6.0 6.0 — mV/°C gfe 0.3 0.42 — Mhos Cies — 75 100 pF Coes — 11 20 Cres — 1.6 5.0 — — — — 5.0 5.2 2.3 2.3 6.0 — 3.0 — — 150 — — 35 — 28 — mAdc ON CHARACTERISTICS Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C) (VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 250 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 20 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 0.3 Adc, TC = 25°C) (IEC = 0.3 Adc, TC = 125°C) (IEC = 0.1 Adc, TC = 25°C) (IEC = 0.1 Adc, TC = 125°C) VFEC Reverse Recovery Time @ TC = 25°C IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms trr Reverse Recovery Stored Charge IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms QRR Vdc ns mC SWITCHING CHARACTERISTICS (1) Turn–Off Delay Time Fall Time Turn–Off Switching Loss Turn–Off Delay Time Fall Time Turn–Off Switching Loss Gate Charge (VCC = 300 Vdc, IC = 0.4 Adc, VGE = 15 Vd Vdc, L = 3 3.0 0 mH, H RG = 25 Ω Ω, TC = 25 25°C, C, dV/dt = 1000 V/ms) Energy losses include “tail” td(off) — ns tf — 150 — Eoff — 3.25 4.25 mJ (VCC = 300 Vdc, IC = 0.4 Adc, VGE = 15 Vd Vdc, L = 3 3.0 0 mH, H RG = 25 Ω Ω, TC = 125°C, 125 C, dV/dt = 1000 V/ms) Energy losses include “tail” td(off) — 21 — ns tf — 280 — Eoff — 8.0 10 mJ (VCC = 300 Vdc, IC = 0.3 Adc, VGE = 15 Vdc) QT — 6.4 — nC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola IGBT Device Data MMG05N60D 2.5 TC = 25°C VGE = 15 V 12.5 V 10 V IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 2.5 2.0 1.5 8.0 V 1.0 0.5 0 2 10 V 2.0 1.5 8.0 V 1.0 0.5 4 3 1 2 3 4 5 Figure 1. Saturation Characteristics Figure 2. Saturation Characteristics 12.5 V VGE = 15 V 10 V 2.0 1.5 8.0 V 1.0 0.5 0 1 2 3 4 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) TC = –20°C 700 mA 1.9 500 mA 1.8 IC = 300 mA 1.7 1.6 1.5 VG = 15 V 1.4 –25 0 25 50 75 100 125 Figure 3. Saturation Characteristics Figure 4. Collector–To–Emitter Saturation Voltage versus Case Temperature –20°C 17 25°C 12 7 2 0.5 1.0 1.5 2.0 V FEC , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) TC = 150°C 150 10 500 mA 8 300 mA 6 4 IF = 100 mA 2 0 25 50 75 100 125 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TC, CASE TEMPERATURE (°C) Figure 5. Diode Forward Voltage Figure 6. Diode Forward Voltage versus Case Temperature Motorola IGBT Device Data 6 2.0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 22 0 0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 2.5 IC , COLLECTOR CURRENT (AMPS) 12.5 V 0 1 V FEC , EMITTER–TO–COLLECTOR VOLTAGE (VOLTS) VGE = 15 V TC = 150°C 150 3 MMG05N60D VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) 150 C, CAPACITANCE (pF) TC = 25°C VGE = 0 V 100 Cies Coes 50 Cres 0 5 10 20 15 0 1 2 3 4 6 5 7 Figure 7. Capacitance Variation Figure 8. Gate–To–Emitter Voltage versus Total Charge TC = 125°C 30 20 25°C 10 0 0 0 Qg, TOTAL GATE CHARGE (nC) L = 3.0 mH VCC = 300 V VGE = 15 V RG = 25 W dV/dt = 1.0 kV/ms 40 VCE = 300 V VGE = 15 V IC = 0.3 A TC = 25°C 5 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 60 50 10 25 Ets , TOTAL SWITCHING ENERGY LOSSES ( m J) Ets , TOTAL SWITCHING ENERGY LOSSES ( m J) 0 15 0.5 1.0 20 15 IC = 0.7 A 10 0.3 A 5 0 2.0 1.5 L = 3.0 mH VCC = 300 V VGE = 15 V RG = 25 W dV/dt = 1.0 kV/ms 25 75 50 100 125 IC, COLLECTOR CURRENT (AMPS) TC, CASE TEMPERATURE (°C) Figure 9. Total Switching Losses versus Collector Current Figure 10. Total Switching Losses versus Case Temperature 150 IC , COLLECTOR CURRENT (AMPS) 2.5 2.0 1.5 1.0 TC = 125°C VGE = 15 V RG = 25 W L = 3.0 mH 0.5 0 0 100 200 300 400 500 600 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 11. Minimum Turn–Off Safe Operating Area 4 Motorola IGBT Device Data MMG05N60D 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE RθJC(t) = r(t) RθJC RθJC = 30°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (ms) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 12. Typical Thermal Response 3.8 0.15 2.0 0.079 4.6 0.181 6.2 0.244 2.3 0.091 2.0 0.079 1.5 0.059 Motorola IGBT Device Data 1.5 0.059 1.5 0.059 mm inches 5 MMG05N60D PACKAGE DIMENSIONS A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) M H INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 K CASE 318E–04 TO–261A ISSUE H STYLE 13: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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