ONSEMI MGS05N60D

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by MGS05N60D/D
SEMICONDUCTOR TECHNICAL DATA
 N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener diodes. Fast switching characteristics result in
efficient operation at higher frequencies. This device is ideally
suited for high frequency electronic ballasts.
IGBT
0.5 A @ 25°C
600 V
•
•
•
•
Built–In Free Wheeling Diodes
Built–In Gate Protection Zener Diode
Industry Standard Package (TO92 — 1.0 Watt)
High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and
dV/dt = 1000 V/ms
• Robust High Voltage Termination
• Robust Turn–Off SOA
C
E
C
G
G
CASE 029–05
STYLE 35
TO–226AE
E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameters
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
600
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
VCGR
600
Vdc
Gate–Emitter Voltage — Continuous
VGES
± 15
Vdc
IC25
IC90
ICM
0.5
0.3
2.0
Adc
PD
1.0
Watt
TJ, Tstg
– 55 to 150
°C
RθJC
RθJA
25
125
°C/W
TL
260
°C
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
Total Power Dissipation
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25°C
Energy – Starting @ TC = 125°C
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W
EAS
mJ
125
40
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
REV 2
IGBT
 Motorola
Motorola, Inc.
1998 Device
Data
1
MGS05N60D
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
600
—
680
0.7
—
—
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
Vdc
V/°C
µAdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)
ICES
ICES
—
—
0.1
5.0
5.0
50
Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc)
IGES
—
10
100
—
—
1.6
1.5
2.0
—
3.5
—
—
6.0
6.0
—
mV/°C
gfe
0.3
0.42
—
Mhos
Cies
—
75
100
pF
Coes
—
11
20
Cres
—
1.6
5.0
—
—
—
—
5.0
5.2
2.3
2.3
6.0
—
3.0
—
trr
—
150
—
ns
QRR
—
35
—
mC
(VCC = 300 Vdc, IC = 0.4 Adc,
VGE = 15 Vd
Vdc, L = 3
3.0
0 mH,
H RG = 25 Ω
Ω,
dV/dt = 1000 V/ms)
Energy losses include “tail”
td(off)
—
28
—
ns
tf
—
150
—
Eoff
—
3.25
4.25
mJ
(VCC = 300 Vdc, IC = 0.4 Adc,
VGE = 15 Vd
Vdc, L = 3
3.0
0 mH,
H RG = 25 Ω
Ω,
TC = 125°C,
125 C, dV/dt = 1000 V/ms)
Energy losses include “tail”
td(off)
—
21
—
ns
tf
—
280
—
Eoff
—
8.0
10
mJ
(VCC = 300 Vdc, IC = 0.3 Adc,
VGE = 15 Vdc)
QT
—
6.4
—
nC
mAdc
ON CHARACTERISTICS
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 0.3 Adc)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)
VCE(on)
Gate Threshold Voltage
(VCE = VGE, IC = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 20 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 0.3 Adc)
(IEC = 0.3 Adc, TC = 125°C)
(IEC = 0.1 Adc)
(IEC = 0.1 Adc, TC = 125°C)
Reverse Recovery Time
Reverse Recovery Stored Charge
VFEC
((IF = 0.4 Adc,, VR = 300 Vdc,,
dIF/dt = 10 A/ms)
Vdc
SWITCHING CHARACTERISTICS (1)
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola IGBT Device Data
MGS05N60D
2.5
TC = 25°C
VGE = 15 V
12.5 V
10 V
IC , COLLECTOR CURRENT (AMPS)
ICE, COLLECTOR CURRENT (AMPS)
2.5
2.0
1.5
8.0 V
1.0
0.5
0
2
10 V
2.0
1.5
8.0 V
1.0
0.5
4
3
1
2
3
4
5
Figure 1. Saturation Characteristics
Figure 2. Saturation Characteristics
12.5 V
VGE = 15 V
10 V
2.0
1.5
8.0 V
1.0
0.5
0
1
2
3
4
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
TC = –20°C
IC = 700 mA
1.9
500 mA
1.8
300 mA
1.7
1.6
1.5
VG = 15 V
1.4
–25
0
25
50
75
100
125
Figure 3. Saturation Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Case Temperature
–20°C
17
25°C
12
7
2
0.5
1.0
1.5
2.0
V FEC , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
TC, CASE TEMPERATURE (°C)
TC = 150°C
150
10
IC = 500 mA
8
300 mA
6
4
100 mA
2
0
25
50
75
100
125
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
TC, CASE TEMPERATURE (°C)
Figure 5. Diode Forward Voltage Drop
Figure 6. Diode Forward Voltage versus Case
Temperature
Motorola IGBT Device Data
6
2.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
22
0
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2.5
IC , COLLECTOR CURRENT (AMPS)
12.5 V
0
1
V FEC , EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
VGE = 15 V
TC = 150°C
150
3
MGS05N60D
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
150
C, CAPACITANCE (pF)
TC = 25°C
VGE = 0 V
100
Cies
Coes
50
Cres
0
5
10
20
15
0
1
2
3
4
6
5
7
Figure 7. Capacitance Variation
Figure 8. Gate–To–Emitter Voltage versus
Total Charge
TC = 125°C
30
20
25°C
10
0
0
0
Qg, TOTAL GATE CHARGE (nC)
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25 W
dV/dt = 1.0 kV/ms
40
VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25°C
5
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
60
50
10
25
Ets , TOTAL SWITCHING ENERGY LOSSES ( m J)
Ets , TOTAL SWITCHING ENERGY LOSSES ( m J)
0
15
0.5
1.0
20
15
IC = 0.7 A
10
0.3 A
5
0
2.0
1.5
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25 W
dV/dt = 1.0 kV/ms
25
75
50
100
125
IC, COLLECTOR CURRENT (AMPS)
TC, CASE TEMPERATURE (°C)
Figure 9. Total Switching Losses versus
Collector Current
Figure 10. Total Switching Losses versus
Case Temperature
150
IC , COLLECTOR CURRENT (AMPS)
2.5
2.0
1.5
1.0
TC = 125°C
VGE = 15 V
RG = 25 W
L = 3.0 mH
0.5
0
0
100
200
300
400
500
600
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Minimum Turn–Off
Safe Operating Area
4
Motorola IGBT Device Data
MGS05N60D
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
(RqJC(t))
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RθJC(t) = r(t) RθJC
RθJC = 25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.001
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
t, TIME (ms)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 12. Typical Thermal Response
Motorola IGBT Device Data
5
MGS05N60D
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
G
H
J
V
1 2 3
SECTION X–X
N C
N
CASE 029–05
TO–226AE
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 35:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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6
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Motorola IGBTMGS05N60D/D
Device Data