Order this document by MGSF3454XT1/D SEMICONDUCTOR TECHNICAL DATA Motorola Preferred Device "& #"! ! $ ! !! % #!$$%"#$ Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 50 mΩ (TYP) D These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 1 2 5 6 D DRAIN D D S G CASE 318G–02, Style 1 TSOP 6 PLASTIC • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature TSOP 6 Surface Mount Package Saves Board Space 3 GATE • Visit our Web Site at http://www.mot–sps.com/ospd SOURCE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDSS 30 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) ID IDM 1.75 20 A Total Power Dissipation @ TA = 25°C PD 950 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient RθJA 250 °C/W TL 260 °C Drain–to–Source Voltage Maximum Lead Temperature for Soldering Purposes, for 10 seconds Device Marking = 3G ORDERING INFORMATION Device Reel Size Tape Width Quantity MGSF3454XT1 7″ 8 mm embossed tape 3000 MGSF3454XT3 13″ 8 mm embossed tape 10,000 GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Transistors, FETs and Diodes Device Data Motorola, Small–Signal Inc. 1997 1 MGSF3454XT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 30 — — — — — — 1.0 25 — — ±100 1.0 — — — — 0.05 0.07 0.065 0.095 Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µA) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS Vdc µAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.75 A) (VGS = 4.5 Vdc, ID = 1.5 A) rDS(on) Vdc Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Ciss — 345 — Output Capacitance (VDS = 5.0 V) Coss — 215 — pF Transfer Capacitance (VDG = 5.0 V) Crss — 140 — td(on) — 10 — tr — 15 — td(off) — 20 — tf — 10 — QT — — 15 nC IS — — 1.0 A Pulsed Current ISM — — 5.0 A Forward Voltage(2) VSD — — 1.2 V SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time ( DD = 10 Vdc, (V Vd , ID = 1.0 1 0 A, A, VGEN = 10 V, RL = 10 Ω) Turn–Off Delay Time Fall Time Gate Charge ns SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 7.0 0.12 R DS(on) , ON–RESISTANCE (W) VGS = 4.5 V ID , DRAIN CURRENT (AMPS) 6.0 4.0 V 5.0 4.0 3.5 V 3.0 2.0 3.0 V 1.0 2.5 V 2.25 V VGS = 10 V 0.08 25°C 0.06 –55°C 0.04 0 0 2 TJ = 150°C 0.10 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.02 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 1. Output Characteristics Figure 2. On–Resistance versus Drain Current 7.0 Motorola Small–Signal Transistors, FETs and Diodes Device Data MGSF3454XT1 TYPICAL ELECTRICAL CHARACTERISTICS 1000 0.14 TJ = 150°C C, CAPACITANCE (pF) R DS(on) , ON–RESISTANCE (W) 0.16 0.12 VGS = 4.5 V 0.10 25°C 0.08 –55°C Ciss Coss Crss 100 VGS = 0 V f = 1.0 MHz TJ = 25°C 0.06 0.04 10 0.5 1.0 1.5 2.5 2.0 3.0 0 8.0 12 16 20 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 3. On–Resistance versus Drain Current Figure 4. Capacitance 24 1.4 10 VDS = 24 V TJ = 25°C ID = 10 A 8.0 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 1.3 ID = 1.5 A VGS = 4.5 V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 –55 10 45 –5.0 95 145 QG, TOTAL GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Gate Charge Figure 6. On–Resistance versus Junction Temperature 1.6 10 ID = 6.4 A VGS = 10 V 1.5 1.4 IS, SOURCE CURRENT (AMPS) R DS(on) , ON–RESISTANCE (NORMALIZED) 4.0 ID, DRAIN CURRENT (AMPS) R DS(on) , ON–RESISTANCE (NORMALIZED) VGS , GATE–TO–SOURCE VOLTAGE (VOLTS) 0 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 1.0 TJ = 150°C 25°C –55°C 0.1 0.01 0.001 –55 –5.0 45 95 145 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ, JUNCTION TEMPERATURE (°C) VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 7. On–Resistance versus Junction Temperature Figure 8. Source–Drain Diode Forward Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MGSF3454XT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.8 0.4 1.6 V GS(th) (VOLTS) R DS(on) , ON–RESISTANCE (W) 0.5 0.3 0.2 ID = 1.75 A ID = 250 mA 1.4 1.2 1.0 0.1 0.8 0 0.6 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 –50 –25 0 25 50 75 100 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 9. On–Resistance versus Gate–to–Source Voltage Figure 10. Threshold Voltage 125 150 20 POWER (WATTS) 16 12 8.0 4.0 0 0.01 0.1 1.0 10 100 TIME (sec) Figure 11. Single Pulse Power NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1.0 DUTY CYCLE = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 0.01 SINGLE PULSE RθJA(t) = r(t) RθJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TA = P(pk) RθJA(t) 0.01 0.0001 0.001 0.01 0.1 1.0 10 100 1.0 k SQUARE WAVE PULSE DURATION (sec) Figure 12. Normalized Thermal Transient Impedance, Junction–to–Ambient 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MGSF3454XT1 INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.094 2.4 0.037 0.95 0.074 1.9 0.037 0.95 0.028 0.7 0.039 1.0 inches mm TSOP–6 TSOP–6 POWER DISSIPATION The power dissipation of the TSOP–6 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the TSOP–6 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 500 milliwatts. PD = 150°C – 25°C 250°C/W = 500 milliwatts The 250°C/W for the TSOP–6 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 500 milliwatts. There are other alternatives to achieving higher power dissipation from the TSOP–6 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MGSF3454XT1 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 5 4 2 3 B S 1 D G M J C 0.05 (0.002) K H CASE 318G–02 ISSUE A TSOP 6 PLASTIC DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 DRAIN DRAIN GATE SOURCE DRAIN DRAIN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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This device has a class 1 ESD rating. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://www.mot.com/SPS/ 6 ◊ Motorola Small–Signal Transistors, FETs and DiodesMGSF3454XT1/D Device Data