NEC NE325S01-T1B

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE325S01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
PACKAGE DIMENSIONS
The NE325S01 is a Hetero Junction FET that utilizes the
(Unit: mm)
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS
2.0 ±0.2
and another commercial systems.
2.
FEATURES
0
1
±0
.2
• Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
ORDERING INFORMATION
PART NUMBER
SUPPLYING FORM
MARKING
NE325S01-T1
Tape & reel 1000 pcs./reel
D
NE325S01-T1B
Tape & reel 4000 pcs./reel
D
0.65 TYP.
VDS
4.0
V
1.9 ±0.2
Gate to Source Voltage
VGS
–3.0
V
1.6
ID
IDSS
mA
IG
100
µA
Ptot
165
mW
Gate Current
Channel Temperature
Tch
125
˚C
Storage Temperature
Tstg
–65 to +125
˚C
Source
Drain
Source
Gate
1.5 MAX
Drain to Source Voltage
Total Power Dissipation
1.
2.
3.
4.
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain Current
4
2.0 ±0.2
2
0.5 TYP.
• Gate Length : Lg ≤ 0.20 µm
• Gate Width : Wg = 200 µm
0.125 ±0.05
0.4MAX
4.0 ±0.2
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
Drain to Source Voltage
TYP.
MAX.
Unit
VDS
2
3
V
Drain Current
ID
10
20
mA
Input Power
Pin
0
dBm
Document No. P11138EJ3V0DS00 (3rd edition)
Date Published October 1996 N
Printed in Japan
MIN.
©
1996
NE325S01
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
0.5
10
µA
VGS = –3 V
VDS = 2 V, VGS = 0 V
Gate to Source Leak Current
IGSO
Saturated Drain Current
IDSS
20
60
90
mA
VGS(off)
–0.2
–0.7
–2.0
V
Transconductance
gm
45
60
Noise Figure
NF
Associated Gain
Ga
Gate to Source Cutoff Voltage
0.45
11.0
0.55
12.5
TEST CONDITIONS
VDS = 2 V, ID = 100 µA
mS
VDS = 2V, ID = 10 mA
dB
VDS = 2 V, ID = 10 mA, f = 12 GHz
dB
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
100
200
80
ID - Drain Current - mA
Ptot - Total Power Dissipation - mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
100
VGS = 0 V
60
–0.2 V
40
–0.4 V
20
50
–0.6 V
–0.8 V
0
50
100
150
200
0
250
1.5
3.0
TA - Ambient Temperature - ˚C
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
40
20
0
–2.0
–1.0
0
MSG. - Maximum Stable Gain - dB
MAG. - Maximum Available Gain - dB
|S21s|2 - Forward Insertion Gain - dB
ID - Drain Current - mA
VDS = 2 V
60
VDS = 2 V
ID = 10 mA
20
MSG.
MAG.
16
|S21S|2
12
8
VGS - Gate to Source Voltage - V
4
1
2
4
6
8 10
f - Frequency - GHz
2
14
20 30
NE325S01
Gain Calculations
1 + | ∆ |2 – | S11 |2 – | S22 |2
2 | S12 | | S21 |
MSG. =
| S21 |
| S12 |
K =
MAG. =
| S21 |
(K ± K 2 – 1)
| S12 |
∆ = S11 • S22 – S21 • S12
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
VDS = 2 V
f = 12 GHz
VDS = 2 V
ID = 10 mA
14
Ga
13
16
1.0
12
0.5
8
NF - Noise Figure - dB
Ga
Ga - Associated Gain - dB
NF - Noise Figure - dB
20
12
2.0
11
1.5
10
1.0
Ga - Associated Gain - dB
24
0.5
NF
NF
0
1
2
0
4
6
8 10
14
4
20 30
10
20
30
ID - Drain Current - mA
f - Frequency - GHz
3
NE325S01
S-PARAMETERS
VDS = 2 V, ID = 10 mA
START 2 GHz, STOP 18 GHz, STEP 500 MHz
Marker
1: 4 GHz
2: 8 GHz
3: 12 GHz
4: 16 GHz
5: 18 GHz
S11
S12
1.0
+90˚
0.5
2.0
5
+135˚
+45˚
4
∞
0
1
±180˚
2
0
3
3
5
4
1
2
–0.5
–135˚
–2.0
–1.0
–45˚
–90˚
Rmax. = 1
S21
S22
+90˚
1.0
Rmax. = 0.25
0.5
+135˚
1
2.0
+45˚
2
5
3
4
±180˚
0
∞
0
3
5
4
–135˚
2
–45˚
–2.0
–0.5
–90˚
4
1
Rmax. = 5
–1.0
Rmax. = 1
NE325S01
S-PARAMETERS
MAG. AND ANG.
VDS = 2 V, ID = 10 mA
FREQUENCY
MHz
S11
MAG.
S21
ANG.
MAG.
(deg.)
S12
ANG.
MAG.
(deg.)
S22
ANG.
MAG.
(deg.)
ANG.
(deg.)
2000
.999
–26.7
4.914
151.5
.029
74.5
.444
–18.9
2500
.994
–29.0
4.748
147.2
.036
73.3
.507
–26.8
3000
.952
–38.8
4.770
137.3
.044
65.3
.472
–32.7
3500
.939
–44.6
4.654
131.3
.050
62.7
.485
–37.1
4000
.926
–51.1
4.547
125.0
.055
59.3
.490
–40.9
4500
.866
–56.7
4.413
117.6
.059
53.7
.477
–45.3
5000
.821
–60.6
4.285
111.6
.064
50.8
.474
–48.5
5500
.783
–63.7
4.192
105.7
.069
48.4
.465
–51.7
6000
.788
–70.5
4.207
99.8
.075
45.1
.439
–55.4
6500
.755
–76.1
4.219
93.7
.079
41.7
.421
–58.9
7000
.721
–82.9
4.231
87.2
.085
38.6
.401
–63.4
7500
.679
–91.9
4.234
80.0
.092
33.4
.361
–69.3
8000
.634
–101.6
4.207
72.6
.095
28.8
.322
–75.7
8500
.595
–111.7
4.136
65.3
.098
24.2
.288
–83.0
9000
.563
–122.5
4.059
58.1
.104
20.5
.256
–92.1
9500
.537
–132.5
3.958
51.1
.105
16.0
.229
–101.2
10000
.505
–142.0
3.834
44.3
.108
11.7
.208
–108.5
10500
.478
–151.0
3.735
38.3
.109
8.6
.187
–114.8
11000
.451
–159.2
3.647
32.5
.110
5.3
.164
–120.0
11500
.421
–168.7
3.609
26.6
.112
1.9
.147
–124.7
12000
.415
179.9
3.589
20.6
.115
.3
.124
–133.2
12500
.424
167.1
3.556
13.4
.116
–3.3
.108
–151.1
13000
.448
152.5
3.473
5.5
.122
–7.9
.103
175.2
13500
.477
138.9
3.331
–1.8
.121
–13.1
.126
143.2
14000
.508
128.1
3.161
–8.5
.118
–15.9
.157
120.6
14500
.530
120.0
3.006
–14.2
.115
–18.0
.184
110.2
15000
.554
113.2
2.913
–19.4
.118
–18.9
.214
106.0
15500
.579
109.4
2.822
–24.6
.118
–19.9
.235
102.0
16000
.595
104.0
2.753
–30.6
.120
–22.0
.264
100.0
16500
.625
97.3
2.685
–37.0
.121
–25.5
.297
94.1
17000
.652
89.6
2.601
–43.8
.123
–30.4
.317
88.4
17500
.688
82.2
2.505
–50.8
.124
–34.2
.345
82.5
18000
.709
75.3
2.372
–57.2
.122
–37.3
.383
76.2
5
NE325S01
AMP. PARAMETERS
VDS = 2 V, ID = 10 mA
FREQUENCY
GUmax
GAmax
|S21|2
|S12|2
MHz
dB
dB
dB
dB
2000
6
K
Delay Mason’s U
ns
dB
G1
G2
dB
dB
1.29
13.83
–30.68
.02
.024
2500
34.12
13.53
–28.81
.05
.024
19.30
.95
3000
24.91
13.57
–27.20
.25
.055
10.25
1.09
3500
23.80
13.36
–26.07
.27
.033
9.28
1.16
4000
22.80
13.15
–25.22
.29
.035
8.45
1.19
4500
20.04
12.89
–24.56
.48
.041
30.046
6.02
1.12
5000
18.61
12.64
–23.90
.59
.033
25.177
4.86
1.11
5500
17.63
12.45
–23.24
.67
.032
23.488
4.12
1.06
6000
17.62
12.48
–22.45
.64
.033
26.711
4.21
.93
6500
17.02
12.50
–22.08
.70
.034
25.122
3.67
.85
7000
16.47
12.53
–21.45
.73
.036
25.323
3.18
.76
7500
15.82
12.53
–20.71
.78
.040
23.957
2.68
.61
8000
15.19
12.48
–20.45
.84
.041
22.607
2.23
.48
8500
14.60
12.33
–20.15
.89
.040
21.735
1.90
.38
9000
14.12
12.17
–19.69
.91
.040
21.968
1.66
.29
9500
13.66
11.95
–19.57
.96
.039
21.196
1.48
.23
10000
13.15
15.21
11.67
–19.29
1.00
.038
20.248
1.28
.19
10500
12.73
13.86
11.45
–19.29
1.06
.033
19.297
1.13
.15
11000
12.34
13.15
11.24
–19.19
1.11
.032
18.449
.99
.12
11500
12.09
12.73
11.15
–19.05
1.15
.033
17.976
.85
.09
12000
11.99
12.61
11.10
–18.81
1.15
.033
18.424
.82
.07
12500
11.93
12.56
11.02
–18.74
1.15
.040
18.844
.86
.05
13000
11.83
12.56
10.81
–18.31
1.11
.044
19.943
.97
.05
13500
11.64
12.31
10.45
–18.38
1.12
.040
19.641
1.12
.07
14000
11.40
11.91
10.00
–18.54
1.15
.037
18.906
1.30
.11
14500
11.14
11.54
9.56
–18.76
1.19
.031
18.016
1.43
.15
15000
11.08
11.50
9.29
–18.59
1.16
.029
18.476
1.59
.20
15500
11.03
11.49
9.01
–18.57
1.14
.029
18.729
1.77
.25
16000
11.00
11.57
8.79
–18.42
1.11
.033
19.308
1.90
.31
16500
11.13
11.87
8.58
–18.33
1.07
.036
20.642
2.15
.40
17000
11.16
12.17
8.30
–18.19
1.03
.037
22.203
2.40
.46
17500
11.31
7.97
–18.10
.98
.039
25.645
2.78
.55
18000
11.22
7.50
–18.28
.99
.035
22.558
3.03
.69
NE325S01
NOISE PARAMETER
<TYPICAL CONSTANT NOISE FIGURE CIRCLE>
1
VDS = 2 V
ID = 10 mA
f = 12 GHz
0.6
2
0.2
5
∗
Γopt
0
0.2
0.6
1.0
∞
2.0
0.8
1.0
–5
–0.2
–2
–0.6
–1
<NOISE PARAMETER>
VDS = 2 V, ID = 10 mA
Freq. (GHz)
NFmin. (dB)
Ga (dB)
2.0
0.29
4.0
0.30
6.0
8.0
Γopt.
Rn/50
MAG.
ANG. (deg.)
20.0
0.93
14
0.38
18.3
0.80
29
0.33
0.32
16.5
0.65
48
0.25
0.35
15.0
0.49
72
0.18
10.0
0.40
13.6
0.36
102
0.11
12.0
0.45
12.5
0.27
139
0.08
14.0
0.53
12.0
0.24
–176
0.07
16.0
0.67
11.8
0.30
–122
0.10
18.0
0.83
11.5
0.47
–58
0.22
7
NE325S01
TYPICAL MOUNT PAD LAYOUT
2.4 mm TYP.
2.4 mm TYP.
8
NE325S01
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Soldering process
Soldering conditions
Infrared ray reflow
Peak package’s surface temperature: 230 ˚C or below,
Reflow time: 30 seconds or below (210 ˚C or higher),
Number of reflow process: 1, Exposure limitNote: None
Partial heating method
Terminal temperature: 230 ˚C or below,
Flow time: 10 seconds or below,
Exposure limitNote: None
Symbol
IR30-00
Note Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 ˚C and relative humidity at 65 % or less.
Caution Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
9
NE325S01
[MEMO]
10
NE325S01
[MEMO]
11
NE325S01
Caution
The Grate Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
2