Order this document by MPS650/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS Symbol MPS650 MPS750 MPS651 MPS751 Unit Collector – Emitter Voltage VCE 40 60 Vdc Collector – Base Voltage VCB 60 80 Vdc Emitter – Base Voltage Rating VEB 5.0 Vdc Collector Current — Continuous IC 2.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Ambient Characteristic RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 60 — — 60 80 — — 5.0 — — — 0.1 0.1 — 0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO MPS650, MPS750 MPS651, MPS751 V(BR)CBO MPS650, MPS750 MPS651, MPS751 Emitter – Base Breakdown Voltage (IC = 0, IE = 10 µAdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc V(BR)EBO Vdc µAdc ICBO MPS650, MPS750 MPS651, MPS751 Emitter Cutoff Current (VEB = 4.0 V, IC = 0) IEBO Vdc µAdc 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 75 75 75 40 — — — — — — 0.5 0.3 Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) hFE — Collector – Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) VCE(sat) Vdc Base–Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) VBE(on) — 1.0 Vdc Base – Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VBE(sat) — 1.2 Vdc fT 75 — MHz SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(2) (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. NPN PNP 300 250 270 TJ = 125°C 210 180 25°C 150 120 – 55°C 90 125 100 – 55°C 75 30 25 50 25°C 150 50 20 0 –10 – 20 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) Figure 1. MPS650, MPS651 Typical DC Current Gain –2.0 1.8 –1.8 1.6 –1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) PNP 2.0 1.4 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.6 – 50 –10 – 200 – 500 –1.0 A –2.0 A –4.0 A 0 IC, COLLECTOR CURRENT (mA) Figure 2. MPS750, MPS751 Typical DC Current Gain NPN 0.4 –1.4 –1.2 VBE(sat) @ IC/IB = 10 –1.0 –0.8 VBE(on) @ VCE = 2.0 V –0.6 –0.4 VCE(sat) @ IC/IB = 10 0.2 VCE(sat) @ IC/IB = 10 –0.2 0 0 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) Figure 3. MPS650, MPS651 On Voltages 2 VCE = –2.0 V 175 60 0 10 TJ = 125°C 200 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 240 225 VCE = 2.0 V 2.0 A 4.0 A –50 –10 –20 –50 –1.0 A 0 IC, COLLECTOR 0 0 CURRENT (mA) –2.0 A –4.0 A Figure 4. MPS750, MPS751 On Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 TJ = 25°C 0.7 0.6 0.5 0.4 0.3 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 PNP –1.0 –0.9 TJ = 25°C –0.8 –0.7 –0.6 –0.5 –0.4 IC = –500 mA –0.3 –0.2 –0.1 IC = –10 mA NPN PNP –10 IC, COLLECTOR CURRENT 4.0 –4.0 2.0 1.0 ms 1.0 0.5 0.05 0.02 0.01 1.0 –50 –100 –200 –500 Figure 6. MPS750, MPS751 Collector Saturation Region 10 0.1 IC = –100 mA 0 –0.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 5 IB, BASE CURRENT (mA) Figure 5. MPS650, MPS651 Collector Saturation Region 0.2 IC = –2.0 A TA = 25°C 100 µs 1.0 ms –1.0 MPS65 0 MPS65 1 TC = 25°C –0.5 –0.2 –0.1 –0.05 WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 µs –2.0 –0.02 100 Figure 7. MPS650, MPS651 SOA, Safe Operating Area Motorola Small–Signal Transistors, FETs and Diodes Device Data –0.01 –1.0 TA = 25°C MPS75 0 MPS75 1 TC = 25°C WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –2.0 –5.0 –10 –20 –50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) –100 Figure 8. MPS750, MPS751 SOA, Safe Operating Area 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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