Order this document by MPSW55/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc Collector – Base Voltage VCBO –60 –80 Vdc Emitter – Base Voltage VEBO –4.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Operating and Storage Junction Temperature Range 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –60 –80 — — –4.0 — — — –0.5 –0.5 — — –0.1 –0.1 — –0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) V(BR)CEO MPSW55 MPSW56 Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = –40 Vdc, IB = 0) (VCE = –60 Vdc, IB = 0) MPSW55 MPSW56 Collector Cutoff Current (VCB = –40 Vdc, IE = 0) (VCB = –60 Vdc, IE = 0) MPSW55 MPSW56 µAdc ICBO IEBO Vdc µAdc ICES Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width Vdc µAdc v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 100 50 — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –250 mAdc, VCE = –1.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = –250 mAdc, IB = –10 mAdc) VCE(sat) — –0.5 Vdc Base–Emitter On Voltage (IC = –250 mAdc, VCE = –5.0 Vdc) VBE(on) — –1.2 Vdc fT 50 — MHz Cobo — 15 pF SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –250 mAdc, VCE = –5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = –10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 400 hFE, DC CURRENT GAIN TJ = 125°C VCE = –1.0 V 200 25°C –55°C 100 80 60 40 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) –50 –70 –100 –200 –300 –500 –1.0 –1.0 TJ = 25°C –0.8 –0.8 –0.6 IC = –10 mA –50 mA –100 mA –250 mA –500 mA –0.4 –0.2 VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V –0.4 –0.2 VCE(sat) @ IC/IB = 10 0 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA) –10 –20 Figure 2. Collector Saturation Region 2 TJ = 25°C V, VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain –50 0 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500 Figure 3. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 100 –0.8 70 –1.2 –1.6 θVB for VBE –2.0 30 20 10 –2.4 Cobo 7.0 –2.8 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) 5.0 –0.1 –500 Figure 4. Base–Emitter Temperature Coefficient –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS) –50 –100 Figure 5. Capacitance 200 VCE = –2.0 V TJ = 25°C IC, COLLECTOR CURRENT (mA) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) TJ = 25°C Cibo 50 C, CAPACITANCE (pF) θ VB, TEMPERATURE COEFFICIENT (mV/°C) 100 70 50 30 DUTY CYCLE ≤ 10% –2 k –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) –200 Figure 6. Current–Gain — Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data 100 µs –500 –200 –100 –50 –20 20 –2.0 –3.0 1.0 ms –1 k –10 –1.0 1.0 s TA = 25°C TC = 25°C dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW55 MPSW56 –10 –20 –60 –80 –100 –2.0 –5.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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