ONSEMI MPSW56

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by MPSW55/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
*Motorola Preferred Device
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
MPSW55
MPSW56
Unit
Collector – Emitter Voltage
VCEO
–60
–80
Vdc
Collector – Base Voltage
VCBO
–60
–80
Vdc
Emitter – Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
–60
–80
—
—
–4.0
—
—
—
–0.5
–0.5
—
—
–0.1
–0.1
—
–0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
MPSW55
MPSW56
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = –40 Vdc, IB = 0)
(VCE = –60 Vdc, IB = 0)
MPSW55
MPSW56
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
(VCB = –60 Vdc, IE = 0)
MPSW55
MPSW56
µAdc
ICBO
IEBO
Vdc
µAdc
ICES
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
Vdc
µAdc
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
100
50
—
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –250 mAdc, VCE = –1.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = –250 mAdc, IB = –10 mAdc)
VCE(sat)
—
–0.5
Vdc
Base–Emitter On Voltage
(IC = –250 mAdc, VCE = –5.0 Vdc)
VBE(on)
—
–1.2
Vdc
fT
50
—
MHz
Cobo
—
15
pF
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –250 mAdc, VCE = –5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = –10 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
400
hFE, DC CURRENT GAIN
TJ = 125°C
VCE = –1.0 V
200
25°C
–55°C
100
80
60
40
–0.5 –0.7
–1.0
–2.0
–3.0
–5.0
–7.0 –10
–20
–30
IC, COLLECTOR CURRENT (mA)
–50
–70
–100
–200
–300
–500
–1.0
–1.0
TJ = 25°C
–0.8
–0.8
–0.6
IC = –10 mA
–50
mA
–100 mA
–250 mA
–500 mA
–0.4
–0.2
VBE(sat) @ IC/IB = 10
–0.6
VBE(on) @ VCE = –1.0 V
–0.4
–0.2
VCE(sat) @ IC/IB = 10
0
–0.05 –0.1
–0.2
–0.5 –1.0 –2.0
–5.0
IB, BASE CURRENT (mA)
–10
–20
Figure 2. Collector Saturation Region
2
TJ = 25°C
V, VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
–50
0
–0.5 –1.0
–2.0
–5.0 –10 –20
–50 –100 –200
IC, COLLECTOR CURRENT (mA)
–500
Figure 3. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
100
–0.8
70
–1.2
–1.6
θVB for VBE
–2.0
30
20
10
–2.4
Cobo
7.0
–2.8
–0.5
–1.0
–2.0
–5.0 –10 –20
–50 –100 –200
IC, COLLECTOR CURRENT (mA)
5.0
–0.1
–500
Figure 4. Base–Emitter Temperature Coefficient
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
–50 –100
Figure 5. Capacitance
200
VCE = –2.0 V
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
TJ = 25°C
Cibo
50
C, CAPACITANCE (pF)
θ VB, TEMPERATURE COEFFICIENT (mV/°C)
100
70
50
30
DUTY CYCLE ≤ 10%
–2 k
–5.0 –7.0 –10
–20 –30 –50 –70 –100
IC, COLLECTOR CURRENT (mA)
–200
Figure 6. Current–Gain — Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
100 µs
–500
–200
–100
–50
–20
20
–2.0 –3.0
1.0 ms
–1 k
–10
–1.0
1.0 s
TA = 25°C
TC = 25°C
dc
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSW55
MPSW56
–10
–20
–60 –80 –100
–2.0
–5.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating
Area
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
G
H
J
V
1 2 3
N C
SECTION X–X
N
CASE 029–05
(TO–226AE)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSW55/D