Order this document by MPSW92/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –300 Vdc Collector – Base Voltage VCBO –300 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Operating and Storage Junction Temperature Range 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) V(BR)CEO –300 — Vdc Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CBO –300 — Vdc Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) V(BR)EBO –5.0 — Vdc Collector Cutoff Current (VCB = –200 Vdc, IE = 0) ICBO — –0.25 µAdc Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) IEBO — –0.1 µAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPSW92 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 25 40 25 — — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –30 mAdc, VCE = –10 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat) — –0.5 Vdc Base–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) VBE(sat) — –0.9 Vdc fT 50 — MHz Ccb — 6.0 pF SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = –20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. TJ = 125°C VCE = –10 V h FE, DC CURRENT GAIN VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 200 25°C 100 –55°C 70 50 30 20 –1.0 2 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –0.7 IC = –20 mA –0.6 TJ = 25°C IC = –30 mA –0.5 –0.4 –0.3 IC = –10 mA –0.2 –0.1 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector Saturation Region Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSW92 R qV, TEMPERATURE COEFFICIENTS (mV/°C) –1.4 –1.2 –1.0 –0.8 –0.6 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V –0.4 –0.2 0 –1.0 –2.0 –3.0 –5.0 –7.0 –10 VCE(sat) @ IC/IB = 5.0 –20 –30 –50 –70 –100 25°C TO 125°C 1.5 1.0 RqVC FOR VCE(sat) 0.5 –55°C TO 25°C 0 –0.5 –1.0 –55°C TO 125°C –1.5 RqVB FOR VBE –2.0 –2.5 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficients Ceb TJ = 25°C 30 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 –0.2 IC/IB = 10 2.0 IC, COLLECTOR CURRENT (mA) 100 70 50 C, CAPACITANCE (pF) 5.0 VCE(sat) @ IC/IB = 10 f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) V, VOLTAGE (VOLTS) TJ = 25°C 2.5 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 100 70 50 TJ = 25°C VCE = –20 V f = 20 MHz 30 20 10 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Current–Gain — Bandwidth Product IC , COLLECTOR CURRENT (mA) –1 k –500 100 ms –200 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 s –100 1.0 ms –50 –20 TA = 25°C MPSW92 TC = 25°C DUTY CYCLE ≤ 10% –10 –10 –20 –50 –100 –200 –300 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Active Region Safe Operating Area Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSW92 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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