Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB, CW amplifier applications. D • Guaranteed Performance @ 1.6 GHz, 28 Volts Output Power = 10 Watts Minimum Gain = 9.5 dB @ 10 Watts Minimum Efficiency = 45% @ 10 Watts • High Gain, Rugged Device • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances • Broadband Performance of This Device Makes It Ideal for Applications from 800 to 1700 MHz, Common–Source Class AB Operation. • Typical Performance at Class A Operation: Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A, Gain = 12.5 dB, IMD = –32 dB G CASE 360B–01, STYLE 1 S • Characterized with Small–Signal S–Parameters from 500 to 2500 MHz • Capable of Handling 30:1 VSWR, @ 28 Vdc • Circuit Board Available Upon Request by Contacting RF Tactical Marketing in Phoenix, AZ MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ± 20 Vdc Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Operating Junction Temperature ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 – – Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS – – 10 µAdc Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS – – 1 µAdc OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 1 µA) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1998 MRF3010 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) VGS(th) 2 2.5 5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 1 A) VDS(on) – 1.5 – Vdc Forward Transconductance (VDS = 10 V, ID = 1 A) gfs 0.35 0.55 – mhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss – 15 – pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Coss – 9 – pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Crss – 0.7 – pF Common Source Power Gain (VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz) Gps 9.5 10.5 – dB Drain Efficiency (VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz) η 45 50 – % ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS Output Mismatch Stress (VDS = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1600 MHz, Load VSWR 30:1 at All Phase Angles) Ψ No Degradation in Output Power Series Equivalent Input Impedance (VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz) Zin – 3.1+j7.18 – Ω Series Equivalent Output Impedance (VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz) Zol – 6.16–j4.75 – Ω L1 L3 R2 VGG INPUT R1 C4 C5 C6 C9 C10 + C11 VDD INPUT C13 R3 L2 R4 Z1 RF INPUT Z2 Z3 Z5 Z6 DUT C1 C2 C1, C6, C10, C12 C2, C3, C7, C8 C4, C11 C5, C9 C13 L1 L2 L3 R1 Z4 C12 C3 24 pF, “A” Chip Capacitor, ATC 0.8–8.0 pF, Variable Capacitor, Johansen Gigatrim 240 pF, “A” Chip Capacitor, ATC 0.1 µF, Ceramic Capacitor 50 µF, 50 V, Electrolytic Capacitor Ferroxcube VK200–19/4B 2 Turns, 0.175′′ ID, 20 AWG, Close Wound 10 Turns, 20 AWG, Close Wound 1 kΩ, 1/4 W Resistor C7 R2 R3 R4 Z1 Z2 Z3 Z4 Z5 Z6 RF OUTPUT C8 220 Ω, 1/4 W Resistor 10 kΩ, 2 W Resistor 10 kΩ, 1/8 W Resistor 0.081′′ x 0.42′′ Microstrip 0.081′′ x 1.24′′ Microstrip 0.32′′ x 0.48′′ Microstrip 0.35′′ x 0.5′′ Microstrip 0.15′′ x 0.44′′ Microstrip 0.081′′ x 1.165′′ Microstrip Figure 1. 1.6 GHz Test Circuit Schematic MRF3010 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 14 12 VDS = 28 Vdc IDQ = 50 mA f = 1.64 GHz 10 VDS = 28 Vdc IDQ = 50 mA f = 1.6 GHz 12 f = 1.6 GHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 14 8 6 4 2 0 Pin = 1 W 10 0.75 W 8 6 0.5 W 4 0.25 W 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Pin, INPUT POWER (Watts) 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VDS, DRAIN VOLTAGE (V) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Drain Voltage 100 C, CAPACITANCE (pF) Ciss 10 Coss Crss 1.0 0.1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Figure 4. Capacitance versus Drain Voltage MOTOROLA RF DEVICE DATA MRF3010 3 S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 500 0.806 –164 4.98 54 0.026 –18 0.598 –125 510 0.805 –164 4.87 53 0.024 –18 0.604 –126 520 0.803 –165 4.75 52 0.024 –20 0.610 –127 530 0.805 –165 4.66 52 0.023 –20 0.619 –128 540 0.803 –166 4.55 51 0.023 –21 0.623 –128 550 0.806 –166 4.45 50 0.023 –22 0.628 –129 600 0.818 –169 4.00 45 0.021 –27 0.646 –132 650 0.822 –171 3.64 41 0.018 –20 0.663 –135 700 0.832 –174 3.35 38 0.017 –28 0.683 –138 750 0.838 –175 3.06 34 0.014 –32 0.704 –141 800 0.843 –178 2.84 30 0.012 –23 0.722 –143 820 0.847 –179 2.74 29 0.011 –21 0.724 –144 840 0.852 –179 2.67 27 0.008 –27 0.725 –145 860 0.855 180 2.59 26 0.009 –17 0.732 –146 880 0.858 179 2.52 25 0.006 –16 0.741 –147 900 0.859 179 2.46 24 0.004 –6 0.752 –147 920 0.860 178 2.39 22 0.006 24 0.758 –147 940 0.865 177 2.34 21 0.009 34 0.777 –148 960 0.874 176 2.29 19 0.011 25 0.790 –150 980 0.876 175 2.22 18 0.010 21 0.780 –152 1000 0.876 175 2.16 16 0.010 25 0.782 –152 1010 0.877 174 2.13 16 0.009 21 0.782 –153 1020 0.877 174 2.11 16 0.008 26 0.786 –153 1030 0.875 174 2.08 15 0.008 28 0.788 –153 1040 0.878 173 2.06 15 0.009 28 0.791 –153 1050 0.877 173 2.03 14 0.010 40 0.795 –154 1060 0.884 173 2.01 13 0.009 38 0.793 –154 1070 0.882 172 1.99 13 0.009 52 0.795 –154 1080 0.887 172 1.96 12 0.008 54 0.796 –155 1090 0.886 171 1.94 12 0.009 51 0.803 –155 1100 0.888 171 1.92 11 0.010 44 0.803 –156 1120 0.889 170 1.88 10 0.010 56 0.809 –156 1140 0.888 170 1.84 8 0.013 56 0.817 –157 1160 0.892 169 1.80 7 0.014 60 0.826 –157 1180 0.895 168 1.77 6 0.014 62 0.836 –158 1200 0.898 167 1.73 5 0.015 62 0.841 –159 1220 0.906 167 1.70 4 0.017 68 0.847 –160 1240 0.905 166 1.67 2 0.017 66 0.849 –161 1260 0.904 165 1.64 1 0.018 63 0.862 –162 1280 0.902 164 1.60 0 0.019 56 0.861 –163 1300 0.906 163 1.55 –1 0.021 55 0.867 –163 Table 1. Common Source S–Parameters (VDS = 28 V, ID = 750 mA) MRF3010 4 MOTOROLA RF DEVICE DATA S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 1320 0.901 162 1.52 –2 0.018 49 0.866 –164 1340 0.906 162 1.49 –3 0.021 61 0.873 –165 1360 0.907 161 1.47 –4 0.022 61 0.875 –166 1380 0.905 161 1.44 –5 0.022 58 0.877 –167 1400 0.901 160 1.42 –7 0.021 58 0.881 –168 1420 0.900 159 1.39 –7 0.022 57 0.884 –168 1440 0.903 158 1.37 –9 0.022 58 0.885 –169 1460 0.912 158 1.34 –10 0.021 56 0.887 –170 1480 0.905 161 1.44 –5 0.022 58 0.877 –167 1500 0.910 156 1.30 –11 0.024 56 0.889 –171 1520 0.903 156 1.27 –12 0.023 57 0.891 –172 1540 0.899 155 1.26 –13 0.025 58 0.892 –173 1560 0.902 154 1.24 –15 0.026 56 0.893 –173 1570 0.902 153 1.22 –15 0.026 52 0.894 –174 1580 0.906 153 1.22 –16 0.024 53 0.892 –174 1590 0.906 153 1.21 –16 0.025 51 0.892 –174 1600 0.909 152 1.20 –17 0.026 49 0.892 –175 1610 0.911 152 1.20 –17 0.028 49 0.891 –175 1620 0.912 152 1.19 –17 0.026 53 0.889 –175 1630 0.907 151 1.18 –18 0.026 51 0.888 –176 1640 0.905 151 1.17 –18 0.027 55 0.889 –176 1650 0.895 150 1.16 –18 0.024 53 0.889 –177 1660 0.893 150 1.15 –19 0.027 52 0.889 –177 1670 0.890 150 1.14 –19 0.027 53 0.891 –177 1680 0.894 149 1.13 –20 0.026 51 0.891 –178 1690 0.899 148 1.12 –20 0.027 49 0.889 –178 1700 0.899 148 1.12 –21 0.027 53 0.888 –178 1750 0.905 147 1.09 –24 0.028 51 0.881 –180 1800 0.887 144 1.06 –26 0.029 50 0.889 179 1850 0.893 142 1.03 –28 0.029 50 0.885 178 1900 0.888 141 1.00 –31 0.031 51 0.883 176 1950 0.883 138 0.99 –34 0.032 51 0.888 176 2000 0.887 135 0.97 –36 0.032 44 0.887 174 2050 0.875 134 0.94 –38 0.035 46 0.894 173 2100 0.885 130 0.93 –42 0.037 45 0.894 172 2150 0.882 128 0.93 –45 0.038 37 0.905 170 2200 0.865 125 0.91 –47 0.040 37 0.907 169 2250 0.875 121 0.90 –50 0.040 30 0.911 168 2300 0.864 118 0.89 –54 0.037 27 0.915 165 2350 0.857 114 0.88 –56 0.042 31 0.917 163 2400 0.849 111 0.87 –59 0.042 23 0.906 162 2500 0.841 102 0.86 –66 0.040 13 0.887 160 Table 1. Common Source S–Parameters (VDS = 28 V, ID = 750 mA) (continued) MOTOROLA RF DEVICE DATA MRF3010 5 (Scale 1:1) Figure 5. Photomaster for MRF3010 (Reduced 25% in printed data book, DL110/D) MRF3010 6 MOTOROLA RF DEVICE DATA VGG INPUT (NOTE 1) L3 – (NOTE 2) + VDD INPUT C6 L1 C10 C11 R1 R3 R2 C9 C5 C4 INPUT C13 R4 L2 C1 OUTPUT C12 1.71″ C2 C1, C6, C10, C12 C2, C3, C7, C8 C4, C11 C5, C9 C13 L1 L2 L3 C3 C7 C8 24 pF, “A” Chip Capacitor, ATC 0.8–8.0 pF, Variable Capacitor, Johansen Gigatrim 240 pF, “A” Chip Capacitor, ATC 0.1 µF, Ceramic Capacitor 50 µF, 50 V, Electrolytic Capacitor VK200 2 Turns, 0.175′′ ID, 20 AWG, Close Wound 10 Turns, 20 AWG, Close Wound R1 R2 R3 R4 1 kΩ, 1/4 W Resistor 220 Ω, 1/4 W Resistor 10 kΩ, 2 W Resistor 10 kΩ, 1/8 W Resistor NOTES: (1) L1 is gate input from Endplate (2) L3 is wrapped around R3 Figure 6. 1.6 GHz Test Circuit Layout MOTOROLA RF DEVICE DATA MRF3010 7 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. G 1 –B– 3 2 K H Q 2 PL 0.25 (0.010) D E F N M T A M B M C –T– SEATING PLANE DIM A B C D E F G H K N Q INCHES MIN MAX 0.790 0.810 0.220 0.240 0.125 0.175 0.205 0.225 0.050 0.070 0.004 0.006 0.562 BSC 0.070 0.090 0.215 0.255 0.350 0.370 0.120 0.140 MILLIMETERS MIN MAX 20.07 20.57 5.59 6.09 3.18 4.45 5.21 5.71 1.27 1.77 0.11 0.15 14.27 BSC 1.78 2.29 5.47 6.47 8.89 9.39 3.05 3.55 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE –A– CASE 360B–01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. 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