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by MRF21120/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
• W–CDMA Performance @ –45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
2170 MHz, 120 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375D–04, STYLE 1
NI–1230
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
389
2.22
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.45
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
MOTOROLA
RF DEVICE DATA
Motorola,
Inc. 2002
MRF21120
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc )
IGSS
—
—
1
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.8
—
S
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
VGS(th)
2.5
3
3.8
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 500 mA)
VGS(Q)
3
3.9
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 2 A)
VDS(on)
—
0.38
0.5
Vdc
Crss
—
2.8
—
pF
10.5
11.4
—
30
34.5
—
—
–31
–28
IRL
—
–12
–9
dB
Gps
—
11.5
—
dB
Gps
—
11.5
—
dB
η
—
34.5
—
%
IMD
—
–31
—
dB
IRL
—
–12
—
dB
P1dB
—
120
—
Watts
Characteristic
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µAdc)
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Gps
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
500 mA,
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
η
dB
IMD
Power Output, 1 dB Compression Point
(VDD = 28 Vdc, CW, IDQ = 2
500 mA, f1 = 2170.0 MHz)
%
dB
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
MRF21120
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
Gps
—
10.5
—
dB
η
—
42
—
%
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued)
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2
f1 = 2170.0 MHz)
500 mA,
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2
f1 = 2170.0 MHz)
500 mA,
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2
500 mA,
f = 2.17 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(2) Device measured in push–pull configuration.
MOTOROLA RF DEVICE DATA
MRF21120
3
B1, B2
C1, C2, C12
C3, C4, C9, C10
C5
C6, C7
C8
C11
C13, C20, C29, C37
C14, C21, C28, C38
C15, C22, C27, C34, C36, C42
C16, C23, C33, C43
C17, C24, C32, C41
C19, C25
C30, C39
C31, C40
C35, C44
Coax1, Coax2
Coax3, Coax4
L1, L5
L2
L3, L4
R1, R2
R3, R4
R5, R6
Z1
Ferrite Beads, Fair Rite
0.6 – 4.5 pF Variable Capacitors, Johanson Gigatrim
10 pF Chip Capacitors, B Case, ATC
0.4 – 2.5 pF Variable Capacitor, Johanson Gigatrim
2.0 pF Chip Capacitors, B Case, ATC
0.5 pF Chip Capacitor, B Case, ATC
0.2 pF Chip Capacitor, B Case, ATC
5.1 pF Chip Capacitors, B Case, ATC
91 pF Chip Capacitors, B Case, ATC
22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet
0.039 µF Chip Capacitors, B Case, ATC
1000 pF Chip Capacitors, B Case, ATC
0.022 µF Chip Capacitors, B Case, ATC
1.0 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet
100 µF, 50 V Electrolytic Capacitors, Sprague
470 µF, 63 V Electrolytic Capacitors, Sprague
25 Ω Semi Rigid Coax, 70 mil OD, 1.05″ Long
50 Ω Semi Rigid Coax, 85 mil OD, 1.05″ Long
5.0 nH Minispring Inductors, Coilcraft
8.0 nH Minispring Inductor, Coilcraft
7.15 nH Microspring Inductors, Coilcraft
1 kΩ, 1/4 W Fixed Metal Film Resistors, Dale
270 Ω, 1/8 W Fixed Film Chip Resistors, Dale
1.2 kΩ, 1/8 W Fixed Film Chip Resistors, Dale
0.150″ x 0.080″ Microstrip
Z2
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z30, Z31
Z32, Z33
Z34, Z35
Z36, Z37
Z38, Z39
Z40
Z41
Z42
Board Material
Connectors
0.320″ x 0.080″ Microstrip
1.050″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
0.610″ x 0.080″ Microstrip
0.135″ x 0.080″ Microstrip
0.130″ x 0.080″ Microstrip
0.300″ x 0.350″ Microstrip
0.150″ x 0.500″ Microstrip
0.075″ x 0.500″ Microstrip
0.330″ x 0.500″ Microstrip
0.100″ x 0.550″ Microstrip
0.175″ x 0.550″ Microstrip
0.045″ x 0.550″ Microstrip
0.190″ x 0.325″ Microstrip
0.080″ x 0.325″ Microstrip
0.515″ x 0.080″ Microstrip
0.020″ x 0.080″ Microstrip
0.565″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.470″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.03″ Teflon, εr = 2.55 Copper
Clad, 2 oz. Cu
N–Type Panel Mount, Stripline
Figure 1. 2.1 – 2.2 GHz Broadband Test Circuit Schematic
MRF21120
4
MOTOROLA RF DEVICE DATA
Figure 2. 2.1 – 2.2 GHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF21120
5
TYPICAL CHARACTERISTICS
8
8
8
8
8
8
9 34
) 9 ( ,-.
) 9 ( ,-.
8
(
(
! #$ %#&' $
5
5
5
8
(
! #$ %#&' $
Figure 4. Intermodulation Distortion
versus Output Power
η
9 34! * 9 ; 8
<50/! =-. 0/ &6>4?0@
5
5
&#
5
5
,
)! $*$+ %,-.'
5
5
5
5
η
5
5
(
0?
38
,
5
(
5
5
5
4
4
5
(
4
4
4
4
( ,-.
&6>0 ,-.
5
67
η
9 34! * 9 ; 8
) 9 ( ,-.! ) 9 ( ,-.
5
5
,
(
(
5
! #$ %#&' (
! #$ %#&' $
Figure 7. Power Gain, Efficiency, ACPR
versus Output Power (W–CDMA)
Figure 8. Power Gain, Efficiency, IMD
versus Output Power
MRF21120
6
5( 38
( -.
5( 38
- #
5( 3
5( 3
#
5
(
67 !2#$22%3'
#
3
η!2$$+2%:'22%3'
67 !2#$22%3'
Figure 6. 2.17 GHz W–CDMA Mask at
14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch
9 34
* 9 ; 8
) 9 ,-.
/0 /1 ( -.
67
BC
5
Figure 5. Class AB Broadband
Circuit Performance
=-
,-.
7
#
#
&#
,$ BC
5( 38
( -.
/) A
5 38
&#
9 34
) 9 ( ,-.
) 9 ( ,-.
8
(
,!2$, η!2$$+2%:'
&2%34'
67 !2#$22%3'
8
8
5
67
8
5
Figure 3. Power Gain versus Output Power
8
8
η!2$$+2%:'
,!2$,2&2%34'
67 !2#$22%3'
,!2$,2&2%34'
5
MOTOROLA RF DEVICE DATA
) 9 ,-.
,-.
714/
D>3
) 9 ,-.
,-.
9 ! * 9 9 Ω
8! 9 # $
Zload
Ω
f
MHz
Zsource
Ω
2110
3.7 + j2.0
4.9 + j2.8
2140
3.5 + j2.4
5.1 + j2.7
2170
3.1 + j2.5
5.2 + j2.5
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
06
,> 4E?0@
/ <1=
/A?4/
03/1
/7
5
5
Z
source
6
,> 4E?0@
/ <1=
Z
load
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF21120
7
PACKAGE DIMENSIONS
2X
Q
GGG
A
A
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444
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(LID)
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C
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(INSULATOR)
E
PIN 5
T
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(INSULATOR)
GGG
,
,
SEATING
PLANE
,
GGG
,
CASE 375D–04
ISSUE C
NI–1230
,
,
DIM
A
B
C
D
E
F
G
H
K
L
M
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MILLIMETERS
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
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MRF21120
8
◊
MOTOROLA RF DEVICE MRF21120/D
DATA