DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3901 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3901-ZK TO-263 (MP-25ZK) FEATURES • Super low On-state resistance (TO-263) RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low C iss: C iss = 1950 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±60 A ID(pulse) ±150 A Total Power Dissipation (TC = 25°C) PT1 64 W Total Power Dissipation (TA = 25°C) PT2 1.5 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C Drain Current (pulse) Note1 Storage Temperature Single Avalanche Energy Note2 EAS 68 mJ Repetitive Avalanche Current Note3 IAR 26 A Repetitive Avalanche Energy Note3 EAR 68 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. RG = 25 Ω, Tch(peak) ≤ 150°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17176EJ1V0DS00 (1st edition) Date Published May 2004 NS CP(K) Printed in Japan 2004 2SK3901 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 30 A 18 36 RDS(on)1 VGS = 10 V, ID = 30 A 10.3 13 mΩ RDS(on)2 VGS = 4.5 V, ID = 30 A 12.1 16.5 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 1950 pF Output Capacitance Coss VGS = 0 V 380 pF Reverse Transfer Capacitance Crss f = 1 MHz 150 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 30 A 12 ns VGS = 10 V 6 ns RG = 0 Ω 48 ns 5.0 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 48 V 40 nC Gate to Source Charge QGS VGS = 10 V 7.5 nC QGD ID = 60 A 10.0 nC VF(S-D) IF = 60 A, VGS = 0 V 0.96 Reverse Recovery Time trr IF = 60 A, VGS = 0 V 32 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 45 nC Gate to Drain Charge Body Diode Forward Voltage Note 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D17176EJ1V0DS td(on) ton tf toff 2SK3901 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 80 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 70 60 50 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) = 150 A RDS(on) Limited (at VGS = 10 V) 100 µs ID(DC) = 60 A 10 1 ms Power Dissipation Limited 1 TC = 25°C Single pulse 10 ms 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 Rth(ch-A) = 83.3°CW 100 10 Rth(ch-C) = 1.94°C/W 1 Single pulse 0.1 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D17176EJ1V0DS 3 2SK3901 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 200 1000 ID - Drain Current - A ID - Drain Current - A 100 150 VGS = 10 V 100 4.5 V 50 TA = 150°C 75°C 25°C −55°C 10 1 0.1 0.01 VDS = 10 V Pulsed Pulsed 0.001 0 0 1 2 3 4 1 5 2 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA 2 1.5 1 0.5 0 -25 25 75 125 100 VDS = 10 V Pulsed 10 TA = 150°C 75°C 25°C −55°C 1 0.1 0.1 175 1 40 Pulsed 30 20 VGS = 4.5 V 10 V 0 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 ID = 30 A Pulsed 30 20 10 ID - Drain Current - A 4 10 ID - Drain Current - A Tch - Channel Temperature - °C 10 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 -75 4 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 2.5 3 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V Data Sheet D17176EJ1V0DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 30 Ciss, Coss, Crss - Capacitance - pF 25 20 VGS = 4.5 V 15 10 V 10 5 ID = 30 A Pulsed VGS = 0 V f = 1 MHz Ciss 1000 Coss 100 Crss 0 10 -75 -25 25 75 125 175 0.1 Tch - Channel Temperature - °C 60 td(off) td(on) tr tf VDD = 30 V VGS = 10 V RG = 0 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 1 12 ID = 60 A 50 10 VDD = 48 V 30 V 12 V 40 8 30 6 VGS 20 10 4 2 VDS 0 0.1 1 10 100 0 0 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 20 30 40 50 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns Pulsed 100 10 QG - Gate Charge - nC ID - Drain Current - A IF - Diode Forward Current - A 10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 10 1 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3901 VGS = 10 V 0V 10 1 di/dt = 100 A/µ s VGS = 0 V 100 10 0.1 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D17176EJ1V0DS 5 2SK3901 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 100 IAS = 26 A EAS = 68 mJ 10 1 10 µ VDD = 30 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 80 60 40 20 0 100 µ 1m 10 m 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - H 6 VDD = 30 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 26 A Data Sheet D17176EJ1V0DS 2SK3901 PACKAGE DRAWING (Unit: mm) 4.45±0.2 1.3±0.2 0.025 to 0.25 0.5± 0.75±0.2 0.2 0 to 2.54 2.54±0.25 9.15±0.3 8.0 TYP. 7.88 MIN. 4 15.25±0.5 10.0±0.3 No plating 1.35±0.3 TO-263 (MP-25ZK) 8o 0.25 1 2 3 1.Gate 2.Drain 2.5 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D17176EJ1V0DS 7 2SK3901 • The information in this document is current as of May, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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