ONSEMI 2N4401RLRP

2N4401
Preferred Device
General Purpose
Transistors
NPN Silicon
Features
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• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
40
Vdc
Collector − Base Voltage
VCBO
60
Vdc
Emitter − Base Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
IC
600
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
−55 to +150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
2
BASE
1
EMITTER
MARKING
DIAGRAM
1
2
2N
4401
YWW
3
TO−92
CASE 29
STYLE 1
Y
WW
= Year
= Work Week
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RJC
83.3
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 1
1
Publication Order Number:
2N4401/D
2N4401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
IBEV
−
0.1
Adc
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ICEX
−
0.1
Adc
20
40
80
100
40
−
−
−
300
−
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
−
−
0.4
0.75
Vdc
Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Base−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
−
0.95
1.2
Vdc
fT
250
−
MHz
Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
6.5
pF
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.0
15
k ohms
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10−4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
500
−
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mhos
(VCC = 30 Vdc, VBE = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
15
ns
tr
−
20
ns
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
ns
tf
−
30
ns
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
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2
2N4401
ORDERING INFORMATION
Package
Shipping†
2N4401
TO−92
5,000 Units / Box
2N4401RLRA
TO−92
2,000 / Tape & Reel
TO−92
(Pb−Free)
2,000 / Tape & Reel
2N4401RLRM
TO−92
2,000 / Ammo Pack
2N4401RLRP
TO−92
2,000 / Ammo Pack
TO−92
(Pb−Free)
2,000 / Ammo Pack
TO−92
2,000 / Ammo Pack
Device
2N4401RLRAG
2N4401RLRPG
2N4401ZL1
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
+16 V
0
−2.0 V
1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
200 1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
+16 V
0
1.0 k
1.0 k
−14 V
CS* < 10 pF
< 2.0 ns
200 CS* < 10 pF
< 20 ns
−4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
TRANSIENT CHARACTERISTICS
25°C
100°C
30
10
7.0
5.0
10
7.0
5.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
REVERSE VOLTAGE (VOLTS)
20 30
QT
2.0
1.0
0.7
0.5
0.3
0.2
Ccb
3.0
2.0
0.1
VCC = 30 V
IC/IB = 10
3.0
Cobo
Q, CHARGE (nC)
CAPACITANCE (pF)
20
0.1
50
QA
10
Figure 3. Capacitances
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
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3
300
500
2N4401
100
100
IC/IB = 10
70
70
50
50
t, TIME (ns)
20
30
10
7.0
7.0
10
20
30
50
70
100
200
300
5.0
500
tf
20
10
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
Figure 6. Rise and Fall Times
300
300
500
100
ts′ = ts − 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
70
50
t f , FALL TIME (ns)
200
t s′, STORAGE TIME (ns)
t, TIME (ns)
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
30
5.0
VCC = 30 V
IC/IB = 10
tr
100
70
IC/IB = 20
30
20
IC/IB = 10
10
50
7.0
30
10
20
30
50
70
100
200
300
5.0
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
300
500
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
f = 1.0 kHz
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8.0
10
IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k
IC = 50 A, RS = 4.0 k
6.0
4.0
IC = 50 A
IC = 100 A
IC = 500 A
IC = 1.0 mA
6.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)
10
20
50
0
100
50
Figure 9. Frequency Effects
100 200
500 1.0k 2.0k 5.0k 10k 20k
RS, SOURCE RESISTANCE (OHMS)
50k 100k
Figure 10. Source Resistance Effects
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2N4401
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high−gain and a low−gain unit were
selected from the 2N4401 lines, and the same units were
used to develop the correspondingly numbered curves on
each graph.
50k
hfe , CURRENT GAIN
200
100
70
2N4401 UNIT 1
2N4401 UNIT 2
50
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
10k
5.0k
2.0k
1.0k
500
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Input Impedance
10
5.0 7.0 10
100
7.0
5.0
2N4401 UNIT 1
2N4401 UNIT 2
3.0
2.0
1.0
0.7
0.5
0.3
0.2
2N4401 UNIT 1
2N4401 UNIT 2
20k
hoe, OUTPUT ADMITTANCE ( mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10−4 )
20
hie , INPUT IMPEDANCE (OHMS)
300
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
50
20
10
5.0
2N4401 UNIT 1
2N4401 UNIT 2
2.0
1.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
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5
5.0 7.0 10
2N4401
STATIC CHARACTERISTICS
h FE, NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125°C
1.0
25°C
0.7
0.5
−55 °C
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0 7.0
10
20
30
50
Figure 16. Collector Saturation Region
1.0
+0.5
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.6
0
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
0.8
VBE @ VCE = 10 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1 0.2
0.5
50
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
VC for VCE(sat)
−0.5
−1.0
−1.5
−2.0
100 200
VB for VBE
−2.5
500
0.1 0.2
Figure 17. “On” Voltages
0.5
50
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
100 200
Figure 18. Temperature Coefficients
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500
2N4401
PACKAGE DIMENSIONS
TO−92
TO−226AA
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X−X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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7
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
2N4401
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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For additional information, please contact your
local Sales Representative.
2N4401/D