2N4401 Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 60 Vdc Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 BASE 1 EMITTER MARKING DIAGRAM 1 2 2N 4401 YWW 3 TO−92 CASE 29 STYLE 1 Y WW = Year = Work Week THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W Thermal Resistance, Junction−to−Case RJC 83.3 °C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 1 1 Publication Order Number: 2N4401/D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 Adc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 Adc 20 40 80 100 40 − − − 300 − OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.4 0.75 Vdc Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.75 − 0.95 1.2 Vdc fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 k ohms Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mhos (VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 15 ns tr − 20 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 ns tf − 30 ns SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 2N4401 ORDERING INFORMATION Package Shipping† 2N4401 TO−92 5,000 Units / Box 2N4401RLRA TO−92 2,000 / Tape & Reel TO−92 (Pb−Free) 2,000 / Tape & Reel 2N4401RLRM TO−92 2,000 / Ammo Pack 2N4401RLRP TO−92 2,000 / Ammo Pack TO−92 (Pb−Free) 2,000 / Ammo Pack TO−92 2,000 / Ammo Pack Device 2N4401RLRAG 2N4401RLRPG 2N4401ZL1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V +16 V 0 −2.0 V 1.0 to 100 s, DUTY CYCLE ≈ 2.0% 200 1.0 to 100 s, DUTY CYCLE ≈ 2.0% +16 V 0 1.0 k 1.0 k −14 V CS* < 10 pF < 2.0 ns 200 CS* < 10 pF < 20 ns −4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time TRANSIENT CHARACTERISTICS 25°C 100°C 30 10 7.0 5.0 10 7.0 5.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS) 20 30 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 3.0 Cobo Q, CHARGE (nC) CAPACITANCE (pF) 20 0.1 50 QA 10 Figure 3. Capacitances 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 4. Charge Data http://onsemi.com 3 300 500 2N4401 100 100 IC/IB = 10 70 70 50 50 t, TIME (ns) 20 30 10 7.0 7.0 10 20 30 50 70 100 200 300 5.0 500 tf 20 10 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise and Fall Times 300 300 500 100 ts′ = ts − 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) 200 t s′, STORAGE TIME (ns) t, TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 5.0 VCC = 30 V IC/IB = 10 tr 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 300 500 SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k 6.0 4.0 IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 10 20 50 0 100 50 Figure 9. Frequency Effects 100 200 500 1.0k 2.0k 5.0k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k 100k Figure 10. Source Resistance Effects http://onsemi.com 4 2N4401 h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 50k hfe , CURRENT GAIN 200 100 70 2N4401 UNIT 1 2N4401 UNIT 2 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10k 5.0k 2.0k 1.0k 500 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Input Impedance 10 5.0 7.0 10 100 7.0 5.0 2N4401 UNIT 1 2N4401 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2N4401 UNIT 1 2N4401 UNIT 2 20k hoe, OUTPUT ADMITTANCE ( mhos) h re , VOLTAGE FEEDBACK RATIO (X 10−4 ) 20 hie , INPUT IMPEDANCE (OHMS) 300 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 50 20 10 5.0 2N4401 UNIT 1 2N4401 UNIT 2 2.0 1.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 5 5.0 7.0 10 2N4401 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 1.0 25°C 0.7 0.5 −55 °C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 16. Collector Saturation Region 1.0 +0.5 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 0.8 VBE @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VC for VCE(sat) −0.5 −1.0 −1.5 −2.0 100 200 VB for VBE −2.5 500 0.1 0.2 Figure 17. “On” Voltages 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 Figure 18. Temperature Coefficients http://onsemi.com 6 500 2N4401 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− 2N4401 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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