RB520S-40 Diodes Schottky barrier diode RB520S-40 zApplications Rectifying small power zLand size figure zExternal dimensions (Unit : mm) 0.8±0.05 0.12±0.05 0.8 0.6 1.7 zFeatures 1) Ultra small power mold type. (EMD2) 2) Low IR 3) High reliability 1.6±0.1 1.2±0.05 CATHODE MARK 0∼0.1 0.3±0.05 0.6±0.1 0.3 EMD2 0.5±0.05 0.5±0.05 zStructure 0.2 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.3 zConstruction Silicon epitaxial planer zTaping dimensions (Unit : mm) 0.2±0.05 φ1.5±0.05 0 2.0±0.05 φ0.5 0.95±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current Forward current surge peak Junction temperature Storage temperature 4.0±0.1 Limits 2.0±0.05 8.0±0.3 0.2 0.55 0.75±0.05 Unit V 40 40 V mA IFSM 200 1 Tj Tstg 125 -40 to +125 ℃ ℃ Io zElectrical characteristic (Ta=25°C) Parameter Symbol Min. VF Forward voltage IR - Reverse current Empty Pocket 空ポケット 1.25±0.05 0.6 1.3±0.1 2.45±0.1 3.5±0.05 1.75±0.1 4.0±0.1 A Typ. - Max. 0.39 0.55 Unit V V IR - - 1 µA IR - - 10 µA Conditions IF=10mA IF=100mA VR=10V VR=40V 1/3 RB520S-40 Diodes zElectrical characteristic curves 100 1000000 Ta=125℃ 100 Ta=75℃ 10 Ta=25℃ 1 0.1 Ta=-25℃ 0.01 REVERSE CURRENT:IR(nA) Ta=75℃ 10000 1000 Ta=25℃ 100 Ta=-25℃ 100 200 300 400 500 1 1 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 490 480 470 800 600 500 400 300 AVE:114nA 200 35 30 25 20 15 10 5 0 0 Ifsm Ct DISPERSION MAP 8.3ms 15 AVE:5.60A 10 5 15 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 20 8.3ms 8.3ms 1cyc 5 0 0 1 10 t 10 5 0.1 0.3 Mounted on epoxy board Ifsm 0 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP IM=1mA AVE:28.2pF IR DISPERSION MAP 10 25 Ta=25℃ f=1MHz VR=0V n=10pcs 40 100 VF DISPERSION MAP 30 30 45 700 460 20 50 Ta=25℃ VR=10V n=30pcs 900 AVE:507.6mV 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) 500 10000 0 30 1000 Ta=25℃ VF=200mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 510 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 10 0.001 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.01 IF=200mA 0.008 1000 1ms time Rth(j-a) 300us 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) f=1MHｚ 100000 D=1/2 0.2 REVERSE POWER DISSIPATION:PR (W) FORWARD CURRENT:IF(mA) Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Sin(θ＝180) DC 0.1 0.006 D=1/2 DC 0.004 Sin(θ＝180) 0.002 10 0.001 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.5 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2/3 RB520S-40 Diodes 0.5 0.4 t DC T 0.3 VR D=t/T VR=20V Tj=125℃ D=1/2 0.2 0.1 Sin(θ＝180) 0 Io 0A 0V Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.5 t 0.4 DC T VR D=t/T VR=20V Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1