RB095B-40 Diodes Schottky barrier diode (Silicon Epitaxial Planer) RB095B-40 zLand size figure zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 6.0 2.3±0.2 0.1 0.5±0.1 9.5±0.5 5.5±0.3 0.1 6.0 1.5±0.3 0.05 ① zFeatures 1) Power mold (CPD3) 2) High reliability 3) Low VF & Low IR 1.6 1.6 1.5 0.75 0.8 2.5 1.5 1.2 0.9 （2） （1） 0.65±0.1 （3） 0.55±0.1 0.55 1.2±0.2 2.3±0.2 2.3±0.2 2.2 1.05 1.74 0.15 ROHM : CPD JEITA : SC-63 ① 2.3 2.3 zStructure R0.45 2.55 （3） 0.16 （2） 1.35 （1） CPD 0.5 2.0 2-R0.3 3.0 2.0 zApplications General rectification (Common cathode dual chip) 0.95 24.5 0.5 ManufactureDate zTaping dimensions (Unit : mm) 2.0±0.05 φ1.55±0.1 0 8.0±0.1 0.4±0.1 7.5±0.05 13.5±0.2 10.1±0.1 6.8±0.1 16.0±0.2 2.5±0.1 4.0±0.1 φ3.0±0.1 8.0±0.1 2.7±0.2 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Reverse voltage (repetitive peak) VRM 45 V Reverse voltage (DC) VR 40 V IO 6 A IFSM 45 A Parameter Average rectified forward current ∗ Forward current surge peak (60Hz 1cyc.) ∗ Junction temperature Tj 150 °C Storage temperature Tstg −40 to +150 °C ∗ Business frequencies, Rating of R-load, 1/2 lo per diode, Tc=120°C zElectrical characteristic (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Forward voltage VF − − 0.55 V IF=3.0A Reverse current IR − − 0.1 mA VR=40V Thermal impedance θjc − − 6.0 °C/W Conditions junction to case Rev.A 1/3 RB095B-40 Diodes zElectrical characteristic curves 1000000 10 1000 Ta=125℃ Ta=150℃ Ta=150℃ f=1MHz Ta=25℃ Ta=75℃ 0.1 10000 Ta=75℃ 1000 100 Ta=25℃ 10 1 Ta=-25℃ 100 10 0.1 0.01 1 0.01 0 100 200 300 400 500 600 700 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 5 10 15 20 25 30 35 0 40 480 470 AVE:472.9mV 460 Ta=25℃ VR=40V n=30pcs 30 150 Ta=25℃ f=1MHz VR=0V n=10pcs 640 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) 490 20 650 200 Ta=25℃ IF=3A n=30pcs 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 500 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=-25℃ Ta=125℃ 1 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 100000 100 50 AVE:14.2uA 630 620 610 AVE:617.9pF 600 590 580 570 560 450 550 0 VF DISPERSION MAP IR DISPERSION MAP 250 1cyc Ifsm 200 8.3ms 150 100 50 AVE:76.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:11.40ns 5 0 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 30 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 300 Ct DISPERSION MAP Ifsm 8.3ms 8.3ms 1cyc 100 10 0 1 trr DISPERSION MAP 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Ifs t 100 10 1ms 100 10 Mounted on epoxy board IM=100mA IF=3A time Rth(j-a) 300us Rth(j-c) 1 FORWARD POWER DISSIPATION:Pf(W) IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS D=1/2 5 DC Sin(θ＝180) 0 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS t(ms) 100 0.1 0.001 0 0.1 TIME:t(s) 10 Rth-t CHARACTERISTICS 1000 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.A 10 2/3 RB095B-40 Diodes 15 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 8 Sin(θ＝180) 6 D=1/2 4 DC 2 15 Io 0A 0V t DC T 10 VR D=t/T VR=20V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 D=1/2 5 Sin(θ＝180) 0 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 Io 0A 0V t DC T 10 VR D=t/T VR=20V Tj=150℃ D=1/2 5 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) ELECTROSTATIC DDISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 AVE:15.6kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1