2SC6098 Ordering number : ENA0413 2SC6098 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 80 V Emitter-to-Base Voltage VEBO 6.5 V IC 2.5 A Base Current ICP IB 500 mA Collector Dissipation PC 0.8 W Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) 4 Tc=25°C A 15 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=70V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA Ratings min typ Unit max 300 1 µA 1 µA 600 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53006EA MS IM TB-00002377 No. A0413-1/4 2SC6098 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance VCE(sat)1 Collector-to-Emitter Saturation Voltage VCE(sat)2 Base-to-Emitter Saturation Voltage VBE(sat) 165 mV 100 150 mV 0.9 1.2 Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO IC=100µA, RBE=0Ω IC=1mA, RBE=∞ 120 V 80 V IE=10µA, IC=0A See specified Test Circuit. 6.5 V 40 ns See specified Test Circuit. 920 ns See specified Test Circuit. 32 ns 1.5 0.5 0.5 2.3 7.5 1 2.3 2 3 0 to 0.2 0.6 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.5 0.8 0.8 1.6 2 1.2 SANYO : TP 1.2 5.5 7.0 1.5 4 7.0 5.5 2.3 6.5 5.0 0.5 0.85 1 V Package Dimensions unit : mm 7003-003 0.85 0.7 0.6 pF V 2.3 4 MHz 14 120 Package Dimensions unit : mm 7518-003 6.5 5.0 Unit 110 Collector-to-Emitter Breakdown Voltage Fall Time max IC=1A, IB=50mA IC=1A, IB=100mA V(BR)CBO ton tstg tf typ 350 Collector-to-Base Breakdown Voltage Storage Time min VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1A, IB=100mA IC=10µA, IE=0A Turn-ON Time Ratings Conditions 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT OUTPUT IB2 VR10 RB RL 50Ω + 100µF VBE= --5V + 470µF VCC=40V 10IB1= --10IB2=IC=0.5A No. A0413-2/4 2SC6098 IC -- VCE 2.0 VCE=5V 2mA 1mA 0.4 0.5 IB=0mA 0 0 0.2 0.4 0.6 0.8 0 0 1.0 Collector-to-Emitter Voltage, VCE -- V VCE=5V Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE --25°C 2 100 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 3 0.8 1.0 f T -- IC VCE=10V 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 IC / IB=10 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 3 2 10 7 5 3 IT11061 VCE(sat) -- IC 5 5 2 Collector Current, IC -- A IT11060 7 1.2 IT11059 5 10 0.01 5 Cob -- VCB 100 0.6 7 Ta=75°C 25°C 3 0.4 Base-to-Emitter Voltage, VBE -- V 1000 7 5 0.2 IT11058 hFE -- IC 1000 1.0 --25°C 5mA 0.8 1.5 25°C 10mA 2.0 Ta=7 5°C 80mA 20mA A 1.2 Collector Current, IC -- A 60mA 40mA 100m Collector Current, IC -- A 1.6 IC -- VBE 2.5 3 2 0.1 7 5 75 = Ta 3 2 °C C 5° --2 °C 25 0.01 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 3 0.01 5 7 100 IT11062 Collector-to-Base Voltage, VCB -- V 3 5 7 0.1 2 3 5 7 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0.1 7 75 5 = Ta 3 °C °C 25 -- 2 °C 25 5 VBE(sat) -- IC 3 2 3 IT11063 IC / IB=10 IC / IB=20 3 2 Collector Current, IC -- A VCE(sat) -- IC 5 2 2 1.0 Ta= --25°C 7 75°C 25°C 5 3 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11064 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11065 No. A0413-3/4 2SC6098 ASO 50 s 10 DC 0m s 2 ati 0.1 7 5 3 0m s 3 2 0.1 7 5 3 2 2 Ta=25°C Single Pulse 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 7 100 IT11066 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 0.9 Tc=25°C Single Pulse 0.01 0.1 5 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT11067 PC -- Tc 17.5 0.8 15.0 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 10 1.0 7 5 n tio era on s s Op er 3 0µ m DC Op 10 s 0µ 1m <10µs 50 s 1m 1.0 7 5 s s 0µ 0µ s m ICP=4A IC=2.5A 3 2 10 Collector Current, IC -- A <10µs 10 10 ICP=4A IC=2.5A 3 2 ASO 7 5 Collector Current, IC -- A 7 5 0.7 0.6 0.5 0.4 0.3 0.2 12.5 10.0 7.50 5.00 2.50 0.1 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11068 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT11069 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice. PS No. A0413-4/4