SANYO 2SB764_03

Ordering number:ENN575D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB764/2SD863
Voltage Regulator, Relay Lamp Driver
Electrical Equipment Applications
Package Dimensions
unit:mm
2006B
[2SB764/2SD863]
6.0
5.0
8.5
4.7
14.0
6.0
3.0
0.5
0.6
0.5
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
1 2 3
( ) : 2SB764
Specifications
1.45
1.45
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
(–)60
V
(–)50
V
VEBO
IC
(–)5
V
(–)1
A
Collector Current (Pulse)
ICP
(–)2
A
Collector Dissipation
PC
0.9
W
150
˚C
–55 to +150
˚C
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(–)50V, IE=0
(–)1
µA
Emitter Cutoff Current
IEBO
VEB=(–)4V, IC=0
(–)1
µA
DC Current Gain
hFE1
hFE2
VCE=(–)2V, IC=(–)50mA
60*
VCE=(–)2V, IC=(–)1A
VCE=(–)10V, IC=(–)50mA
30
Gain-Bandwidth Product
Output Capacitance
fT
Cob
VCB=(–)10V, f=1MHz
320*
150
MHz
(20)
pF
12
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503TN (KT)/91098HA (KT)/4107KI/3085MW, TS No.575–1/4
2SB764/2SD863
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(–)500mA, IB=(–)50mA
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(–)500mA, IB=(–)50mA
Collector-to-Base Breakdown Voltage
Ratings
Conditions
Collector-to-Emitter Breakdown Voltage
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
Emitter-to-Base Breakdown Votage
V(BR)EBO
min
typ
Unit
max
(–0.2)
(–0.7)
V
0.15
0.5
V
(–)0.85
(–)1.2
V
(–)60
V
(–)50
V
(–)5
V
IE=(–)10µA, IC=0
* : The SB764/2SD863 are classified by 50mA hFE as follows :
Rank
D
E
F
hFE
60 to 120
100 to 200
160 to 320
IC -- VCE
IC -- VCE
1000
--6mA
--600
--4mA
--3mA
--400
--2mA
--200
--1mA
IB=0
0
0
--2
--4
--6
--10
Collector Current, IC – mA
--6mA
--4mA
--400
--2mA
--200
IB=0
0
--0.6
8m
4
6
8
--1.0
2SD863
A
10mA
6mA
600
4mA
400
2mA
200
IB=0
0
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Voltage, VCE – V
ITR08347
VCE=2V
12
ITR08346
20m
800
--1.2
IC -- VBE
10
IC -- VCE
0
--0.8
Collector-to-Emitter Voltage, VCE – V
1.2
ITR08348
hFE -- IC
1000
VCE=2V
5
DC Current Gain, hFE
1000
800
764
400
2SB
863
600
2SD
Collector Current, IC – mA
IB=0
2
A
20m
--600
1200
1mA
Collector-to-Emitter Voltage, VCE – V
--
--0.4
200
1000
--1
--0.2
2mA
ITR08345
0mA
0
400
0
Collector Current, IC – mA
mA
--5
0
--
3mA
2SB764
A
--800
600
--12
IC -- VCE
m
30
4mA
0
--8
Collector-to-Emitter Voltage, VCE – V
--1000
A
6m
800
50mA
Collector Current, IC – mA
--8mA
2SD863
A
0
--1
--800
Collector Current, IC – mA
mA
A
10m
A
2SB764
30m
--1000
3
2
2SD863
2S
100
B7
64
5
3
200
2
(For PNP, minus sign
is omitted.)
0
0
0.2
0.4
(For PNP, minus sign is omitted.)
0.6
0.8
Base-to-Emitter Voltage, VBE – V
1.0
1.2
ITR08349
10
1.0
2
3
5
10
2
3
5
100
2
3
Collector Current, IC – mA
5
1000 2 3
ITR08350
No.575–2/4
2SB764/2SD863
Cob -- VCB
100
Gain-Bandwidth Product, fT – MHz
Output Capacitance, Cob – pF
7
5
3
2SB
764
2
2SD
863
10
7
5
VCE=10V
2
100
(For PNP, minus sign is omitted.)
3
1.0
2
3
5
7
3
5
3
2
2
10
3
5
7 100
2
ITR08352
Collector Current, IC – A
D8
7
5
3
2
5 7 1000
Collector Current, IC – mA
2
3
ITR08353
IC=1A
1.0
7
5
DC
3
2
op
era
tio
0.1
7
5
n
3
2
0.01
7
5
(For PNP, minus sign is omitted.)
Single pulse
ICP=2A
s
63
2S
0.1
3
7
0m
2S
2
5
10
6
B7
7 100
3
s
1m s
m
10
4
3
2
2
1s
7
5
5
2
5
1.0
3
3
Collector Current, IC – mA
2
2
63
D8
2S
5
ASO
3
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
100
ITR08351
IC / IB=10
5 7 10
7
10
1.0
7
VCE(sat) -- IC
0.01
64
B7
2S
(For PNP, minus sign is omitted.)
2
10
Collector-to-Base Voltage, VCB -- V
5
f T -- IC
3
f=1MHz
(For PNP, minus sign is omitted.)
5
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE – V
7 100
ITR08354
PC -- Ta
1000
Collector Dissipation, PC – mW
2SB764 / 2SD863
800
600
400
200
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – ˚C
140
160
ITR08355
No.575–3/4
2SB764/2SD863
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.575–4/4