Ordering number : ENN7081 2SK2625LS N-Channel Silicon MOSFET 2SK2625LS Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Low Qg. unit : mm 2078C [2SK2625LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 SANYO : TO-220FI(LS) Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 Gate-to-Source Voltage VGSS ±30 V 4 A Drain Current (DC) ID Drain Current (Pulse) IDP V 16 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=±30V, VDS=0 600 IDSS IGSS VDS=10V, ID=1mA VDS=10V, ID=2.5A 3.5 Forward Transfer Admittance VGS(off) yfs Static Drain-to-Source On-State Resistance RDS(on) ID=2.5A, VGS=15V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions 1.5 max V 1.0 mA ±100 nA 5.5 V 2.0 Ω 3.0 1.5 Marking : K2625 Unit S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2501 TS IM TA-3475 No.7081-1/4 2SK2625LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 700 Output Capacitance 220 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 110 pF VDS=200V, ID=5A, VGS=10V 20 nC Total Gate Charge Qg Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns Rise Time tr td(off) See specified Test Circuit. 20 ns See specified Test Circuit. 50 ns tf See specified Test Circuit. 25 Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD IS=5A, VGS=0 ns 0.88 1.2 V Switching Time Test Circuit VDD=200V ID=2.5A RL=80.0Ω PW=1µs D.C.≤0.5% VOUT D VGS=15V G P.G RGS=50Ω 2SK2625LS S ID -- VDS 0V Tc= --25°C 25°C 5 75°C 4 C 3 2 1 1 VGS=6V 0 Tc=75 ° 7V 2 6 --25°C 3 Drain Current, ID -- A 8V V 15 4 VDS=10V 7 1 5 Drain Current, ID -- A ID -- VGS 8 25 °C 6 0 0 1 2 3 4 5 6 7 8 Drain-to-Source Voltage, VDS -- V 9 10 0 RDS(on) -- VGS 4.0 5 10 15 20 Gate-to-Source Voltage, VGS -- V IT03649 IT03650 RDS(on) -- Tc 3.5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Tc=25°C 3.5 3.0 ID=1A 2.5 5A 2.0 2.5A 1.5 1.0 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT03651 3.0 2.5 0V ,V 2.0 A 2.5 = ID =1 GS A, V 5V =1 GS .5 =2 ID 1.5 1.0 0.5 --50 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT03652 No.7081-2/4 2SK2625LS yfs -- ID 7 5 3 2 5°C --2 = Tc °C 75 1.0 7 25 5 VDS=10V ID=1mA °C 5 4 3 3 2 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A 5 2 --50 7 0 25 50 75 100 125 Case Temperature, Tc -- °C 150 IT03654 Ciss, Coss, Crss -- VDS 3 VGS=0 f=1MHz 2 Ciss, Coss, Crss -- pF Tc= 75° C 25° C --25 °C Forward Current, IF -- A 1000 Ciss 7 5 3 Coss 2 Crss 100 7 5 3 0.3 0 0.6 0.9 1.2 Diode Forward Voltage, VSD -- V 1.5 0 3 tr td(on) 2 ID=4A 7 2 1.0 3 5 Drain Current, ID -- A 7 1.0 7 5 DC 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 2 3 5 7 10 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 0 era tio n 2 3 5 7 100 2 3 5 7 1000 IT03658 PD -- Tc 35 2.0 Op Drain-to-Source Voltage, VDS -- V PD -- Ta 2.5 s 10 ms 0m s Tc=25°C Single Pulse 1.0 10 IT03657 30 IT03656 1m 10 0.01 10 5 25 <1µs 10 µs 10 0µ s 3 2 3 2 3 20 IDP=16A 10 7 5 Drain Current, ID -- A tf 15 ASO 3 2 td (off) 5 10 Drain-to-Source Voltage, VDS -- V VDD=200V VGS=10V 7 5 IT03655 SW Time -- ID 100 Allowable Power Dissipation, PD -- W --25 IT03653 IF -- VSD 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 Switching Time, SW Time -- ns VGS(off) -- Tc 6 VDS=10V Cutoff Voltage, VGS(off) -- V Forward Transfer Admittance, yfs -- S 10 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03660 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT03659 No.7081-3/4 2SK2625LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2001. Specifications and information herein are subject to change without notice. PS No.7081-4/4