Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns). unit:mm 2128 [2SK2919] 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54 5.08 6.2 5.2 7.8 1 : Gate 2 : Source 3 : Drain SANYO : ZP 2.5 10.0 6.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Unit 600 V ±30 V ID 2 A Drain Current (Pulse) IDP 8 A Allowable Power Dissipation 35 W Channel Temperature PD Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Gate-to-Source Voltage Drain Current (DC) Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance V(BR)DSS IDSS Conditions ID=10mA, VGS=0 Ratings min typ 600 Unit V VDS=480V, VGS=0 IGSS VGS(off) | yfs | VGS=±30V, VDS=0 RDS(on) Ciss VGS=10V, ID=1A 3.2 VDS=10V, ID=1mA VDS=10V, ID=1A max 2.0 0.8 1.0 mA ±100 nA 3.0 V 4.3 Ω 1.5 S pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 400 Output Capacitance 55 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 15 pF Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source. Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2283 No.6121–1/4 2SK2919 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage min typ Unit max td(on) See specified Test Circuit 10 ns tr See specified Test Circuit 12 ns td(off) See specified Test Circuit 65 ns tf See specified Test Circuit 40 VSD trr Diode Reverse recovery time Ratings Conditions ns IS=2A, VGS=0 1.5 IS=2A, di/dt=100Aµs V 100 ns Switching Time Test Circuit 10V 0V VDD=200V VGS ID=1A RL=200Ω VGS PW=1µs D.C.≤0.5% D VOUT G 2SK2919 P.G 50Ω S I D - VDS 5 ID - VGS 3.6 VDS=10V Tc=-25°C 3.2 6.0V 10V 2.8 5.5V 3 5.0V 2 4.5V Drain Current, ID – A Drain Current, ID – A 4 25°C 2.4 75°C 2.0 1.6 1.2 0.8 1 4.0V VGS=3.5V 0 0 4 8 12 16 0.4 0 0 20 2 Drain-to-Source Voltage, VDS – V | yfs | - I D 6 8 10 12 14 R DS(on) - VGS 6 VDS=10V Tc=25°C 3 5 2 °C -25 Tc= C 75° 1.0 7 Static Drain-to-Source On-State Resistance, RDS (on) – Ω Forward Transfer Admittance, | yfs | – S 5 4 Gate-to-Source Voltage, VGS – V 25° C 5 3 2 0.1 7 5 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID – A 3 5 7 4 ID=2A 1A 3 2 1 0 10 0.5A 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS – V No.6121–2/4 2SK2919 R DS(on) - Tc 7 ID - Tc 5 ID=1A VDS=10V VGS=10V 4 0V 5 V =1 GS 4 V Drain Current, ID – A Static Drain-to-Source On-State Resistance, RDS (on) – Ω 6 0V =2 GS 3 2 3 2 1 1 -20 0 20 40 60 80 100 120 140 0 -60 160 -40 -20 Case Temperature, Tc – ˚C V GS(off) - Tc 2 1 -20 0 20 40 60 80 100 120 140 3 2 0.1 7 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 SW Time - I D Switching Time, SW Time – ns Ciss, Coss, Crss – pF 160 1.0 7 5 Ciss 100 7 5 Coss 3 2 Crss VDD=200V VGS=10V P.W=1µs D.C≤0.5% 3 2 100 7 5 td(off ) tf 3 2 tr 10 7 5 td(on) 3 0 4 8 12 16 20 24 28 2 5 32 7 2 0.1 A S O ID <1µs 10 10 µs 0µ s 1m 1.0 7 5 DC Operation in this area is limited by RDS(on). s 10 10 op Allowable Power Dissipation, PD – W 3 2 ms 0m s er at io n 0.1 7 5 Tc=25°C 3 Single pulse 2 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS – V 5 7 2 1.0 3 5 PD - Tc 40 2 IDP 3 Drain Current, ID – A Drain-to-Source Voltage, VDS – V Drain Current, ID – A 140 3 2 1000 7 5 VGS=0 f = 1MHz 3 2 3 2 120 10 7 5 3 2 160 Ciss,Coss,Crss - VDS 1000 7 5 10 7 5 100 Diode Forward Voltage, VSD – V 3 2 10 7 5 80 I F - VSD Case Temperature, Tc – ˚C 5 60 75° C 25° C 3 -40 40 Tc= 4 0 -60 20 2 VDS=10V ID=1mV Diode Forward Current, IF – A Cutoff Voltage, VGS(off) – V 5 0 Case Temperature, Tc – ˚C C -40 -25° 0 -60 5 7 1000 35 30 20 10 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc – ˚C No.6121–3/4 2SK2919 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. PS No.6121–4/4