Ordering number:EN5851 N Channel Silicon MOSFET 2SK2859 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low On resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2149 [2SA2859] 5 4 1.8max 1 1.27 0.595 0.43 0.2 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.1 1.5 5.0 6.0 4.4 0.3 8 SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit 100 V ±15 V 2 A ID Drain Current (Pulse) IDP Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (10002×0.8mm) 8 A 1.6 W 150 ˚C –55 to +150 ˚C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1498TS (KOTO) TA-0859 No.5851-1/4 2SK2859 Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Drain-to-Source Cutoff Current VGS(off) | yfs | VDS=10V, ID=1mA VDS=10V, ID=2A RDS(on)1 ID=2A, VGS=10V ID=2A, VGS=4V Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 typ Unit max 100 VDS=100V, VGS=0 VGS=±12V, VDS=0 Gate-to-Souce Cutoff Voltage min ID=1mA, VGS=0 IDSS IGSS Gate-to-Souce Leakage Current Ratings Conditions V 100 µA ±10 µA 2.0 V 0.3 0.4 Ω 0.4 0.55 1.0 2.5 4 S Ω Input Capacitance Ciss VDS=20V, f=1MHz 380 pF Output Capacitance Coss VDS=20V, f=1MHz 80 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns tr See specified Test Circuit 13 ns td(off) See specified Test Circuit 70 ns tf See specified Test Circuit 30 IS=2A, VGS=0 1.0 Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltafe VSD ns 1.2 V Switching Time Test Circuit VDD=50V 10V 0V VIN ID=2A RL=25Ω VOUT VIN D PW=10µs D.C.≤1% G P.G 2SK2859 50Ω S I D – VDS 3.8 2.0V 2.2V 0 2 4 6 8 2 1 0 10 0 1 |yfs| – ID 10 7 C 25˚ ˚C 3 –25 Tc= 2 3 4 5 6 C 75˚ 1.0 7 5 RDS(on) – VDS 0.7 VDS=10V 5 2 Gate-to-Source Voltage,VGS – V Static Drain-to-Source On-State Resistance,RDS (on) – Ω Forward Transfer Admittance, | yfs| – S Drain-to-Source Voltage,VDS – V 2 –25 ˚C 2.4V 2 3 C 2.6V 4 75˚ 2.8V 5 25˚C Drain Current,ID – A 3.0V Tc= .0V S =4 VG Drain Current,ID – A 6 3.2V 4 0 VDS=10V 7 3.4V 8 6 I D – VGS 8 V 3.6 V 10 Tc=25˚C ID=2A 0.6 0.5 0.4 0.3 0.2 0.1 3 2 0 5 7 0.1 2 3 5 7 1.0 Drain Current,ID – A 2 3 5 7 10 0 2 4 6 8 10 12 14 Gate-to-Source Voltage,VDS – A No.5851-2/4 2SK2859 RDS(on) – TC 0.7 4V V = GS 0.4 V =10 V GS 0.3 0.2 –40 0 40 80 120 Ciss 3 2 Coss 100 7 5 3 2 0.1 0 –80 f=1MHz 1000 7 5 Ciss,Coss,Crss – pF Static Drain-to-Source On-State Resistance,RDS (on) – Ω 0.6 0.5 Ciss, Coss, Crss – VDS 3 2 ID=2A Crss 10 7 5 0 160 4 Case Temperature,Tc – ˚C SW Time – ID 5 3 Drain Current , ID – A Switching Time,SW Time – ns td(off) tf 3 2 tr 10 td(on) 7 5 5 7 0.1 2 2 7 1.0 5 3 5 3 7 10 Drain Current,ID – A 20 24 28 32 ASO ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, 10µs 10 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0µ 1m 3 ID 2 s 10 s ms D C 10 nte o p 0m d o er s n a ati cer o n am ic Operation in this bo ard area is limited (10 by RDS(on). 00 mm2 ×0 .8m m) Ta=25˚C 1pulse 2 3 (M ou 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage,VDS – V PD – Ta 1.8 Allowable Power Dissipation,PD – W 16 10 I DP 7 5 2 7 5 12 2 VDD=50V VGS=10V 100 8 Drain-to-Source Voltage,VDS – V 1.6 M ou 1.4 nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d( 10 00 m 0.6 m2 ×0 .8 0.4 m m ) 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature,Ta – ˚C No.5851-3/4 2SK2859 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 1998. Specifications and information herein are subject to change without notice. PS No.5851-4/4