ECH8302 Ordering number : ENN8247 P-Channel Silicon MOSFET ECH8302 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V --7 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% --40 A Mounted on a ceramic board (900mm2✕0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--3.5A RDS(on)1 RDS(on)2 ID=--3.5A, VGS=--10V ID=--2A, VGS=--4V Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr td(off) tf Turn-OFF Delay Time Fall Time Total Gate Charge ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS(off) yfs Input Capacitance Rise Time Conditions Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings min typ Unit max --30 V --1 ±10 --1.0 5.7 VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz --2.4 9.5 µA µA V S 19 25 mΩ 34 48 mΩ 1400 pF 310 pF 230 pF See specified Test Circuit. 13 ns See specified Test Circuit. 70 ns See specified Test Circuit. 150 ns See specified Test Circuit. 90 ns VDS=--10V, VGS=--10V, ID=--7A VDS=--10V, VGS=--10V, ID=--7A 28 nC 4.8 nC VDS=--10V, VGS=--10V, ID=--7A IS=--7A, VGS=0 8.1 --0.82 nC --1.2 V Marking : JB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22805PE TS IM TB-00000078 No.8247-1/4 ECH8302 Package Dimensions unit : mm 2222A 0.25 0.25 4 0.65 7 6 5 0.15 2.3 5 1 8 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 2.8 0.3 8 Electrical Connection 1 2.9 2 3 4 0.07 0.9 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view SANYO : ECH8 Switching Time Test Circuit VDD= --15V VIN 0V --10V ID= --3.5A RL=4.3Ω VOUT VIN D PW=10µs D.C.≤1% G ECH8302 P.G 50Ω ID -- VDS VGS= --2.5V --1 --4 --3 --2 --1 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT09328 0 --1 --2 25°C --25°C --2 --5 Ta=75 °C V --4. 5 V --3 Drain Current, ID -- A --4 --6 --5. 0 --5 VDS= --10V .0V --3 V --6 ID -- VGS --7 --4.0 --10.0V --8.0V --6 .0V --7 Drain Current, ID -- A S --3 Gate-to-Source Voltage, VGS -- V --4 IT09329 No.8247-2/4 ECH8302 RDS(on) -- VGS Ta=25°C 60 50 ID= --3.5A 40 --2.0A 30 20 10 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 30 --10V S= .5A, V G I D= --3 20 10 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT09331 IF -- VSD 2 VDS= --10V VGS=0 --10 7 5 7 5 C 5° 3 -2 =- 2 Ta 1.0 °C 75 °C 25 7 5 3 3 2 --1.0 7 5 3 2 --25°C 10 --0.1 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.1 5 7 --10 IT09332 Drain Current, ID -- A --0.5 tf 7 5 tr 3 --1.1 --1.3 IT09333 f=1MHz Ciss Ciss, Coss, Crss -- pF 100 --0.9 2 td(off) 2 --0.7 Ciss, Coss, Crss -- VDS 3 VDD= --15V VGS= --10V 3 --0.3 Diode Forward Voltage, VSD -- V SW Time -- ID 5 Switching Time, SW Time -- ns --16 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 2 --4V S= A, VG --2.0 I D= 40 IT09330 yfs -- ID 3 50 Ta=7 5°C 25°C --2 60 0 --60 0 0 RDS(on) -- Ta 70 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 2 td(on) 1000 7 5 Coss 3 Crss 2 10 7 5 --0.1 100 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 0 --10 7 5 3 2 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 Total Gate Charge, Qg -- nC 25 30 IT09336 --10 --15 --20 --25 --30 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --7A --9 --5 IT09334 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 7 --10 7 5 3 2 ASO <10µs IDP= --40A 1m s ID= --7A 10 ms 10 DC 0m s op era --1.0 7 5 3 2 --0.1 7 5 3 2 IT09335 tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT09337 No.8247-3/4 ECH8302 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 1.6 M ou 1.4 nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d (9 00 m 0.6 m2 ✕ 0. 8m 0.4 m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09338 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8247-4/4