Ordering number : ENN7152 2SK3414LS N-Channel Silicon MOSFET 2SK3414LS DC / DC Converter Applications Features • • Package Dimensions Low ON-resistance. 4V drive. unit : mm 2078C [2SK3414LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source Specifications Absolute Maximum Ratings at Ta=25°C Parameter 2.55 Symbol 2.55 SANYO : TO-220FI(LS) Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V ID 30 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 120 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 60 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=15A 1.0 RDS(on)1 RDS(on)2 ID=15A, VGS=10V ID=15A, VGS=4V 21 max Unit V 10 µA ±10 µA 2.4 V 20 26 mΩ 26 36 mΩ 29 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11502 TS IM TA-3298 No.7152-1/4 2SK3414LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 1700 Output Capacitance 380 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 110 pF Turn-ON Delay Time td(on) See specified Test Circuit. 16 ns Rise Time tr td(off) See specified Test Circuit. 100 ns See specified Test Circuit. 190 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 90 ns VDS=10V, VGS=10V, ID=30A 52 nC 6 nC 12 Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=30A VDS=10V, VGS=10V, ID=30A Diode Forward Voltage VSD IS=30A, VGS=0 nC 0.96 1.2 V Switching Time Test Circuit VDD=30V 10V 0V VIN ID=15A RL=2Ω VOUT D VIN PW=10µs D.C.≤1% G P.G 50Ω 2SK3414LS S ID -- VDS ID -- VGS 70 VDS=10V 6.0V 15 10 VGS=2.0V 5 40 30 20 10 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 0 2.0 50 40 30 20 10 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT04125 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 4.5 IT04124 RDS(on) -- Tc 50 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C ID=10A 0 0.5 IT04123 RDS(on) -- VGS 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc= --25 °C 75° C 25 °C 2.5V 50 25 °C Tc =7 5° --2 5°C C 3.5 10.0 V 20 Drain Current, ID -- A V 4 .0V 60 8.0V 25 Drain Current, ID -- A 3.0 V 30 40 4V S= , VG A 0 V 1 =10 I D= , VGS A 0 1 I D= 30 20 10 0 --60 --40 --20 0 20 40 60 80 Case Temperature, Tc -- °C 100 120 140 IT04126 No.7152-2/4 100 7 5 3 2 10 7 5 3 2 C 5° --2 C = ° Tc 75 1.0 7 5 3 2 °C 25 0.1 7 5 3 2 0.01 SW Time -- ID 1000 VDD=30V VGS=10V 7 0.1 7 5 3 2 5 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT04128 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 5 3 3 td(off) Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1.0 7 5 3 2 2 3 5 7100 IT04127 Drain Current, ID -- A 2 100 tf 7 5 2 Ciss 1000 7 5 Coss 3 2 3 Crss 100 tr 2 td(on) 7 5 10 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 0 5 7 100 IT04129 100 7 5 Drain Current, ID -- A 8 4 2 0 3 2 10 15 20 25 30 35 40 Total Gate Charge, Qg -- nC 45 50 55 DC 10 7 5 he at sin k 1.0 0.5 0 70 IT04130 10 ms 0m s Op era 3 2 tio Operation in this area is limited by RDS(on). n 1.0 7 5 Tc=25°C Single pulse 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W No 1.5 60 10µs 10 0µ s 1m s 3 5 7 100 IT04132 PD -- Tc 30 2.0 50 10 IT04131 PD -- Ta 2.5 40 ID=30A 0.1 5 30 IDP=120A 3 2 0 20 ASO 3 2 VDS=10V ID=30A 6 10 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 10 7 5 3 2 0.01 0.001 2 3 5 70.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10 Allowable Power Dissipation, PD -- W IF -- VSD VGS=0 5°C 25°C --25°C yfs -- ID VDS=10V Tc=7 100 7 5 3 2 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 2SK3414LS 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04133 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT04134 No.7152-3/4 2SK3414LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS No.7152-4/4