FW261 Ordering number : EN8749 N-Channel Silicon MOSFET FW261 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±20 V V 5 A Drain Current (DC) ID Drain Current (PW≤10s) ID Duty cycle≤1% 6 A Drain Current (PW≤100ms) ID Duty cycle≤1% 10 A IDP PD Duty cycle≤1% 20 A Allowable Power Dissipation Mounted on a ceramic board (2000mm2✕0.8mm) 1unit, PW≤10s 1.8 W Total Dissipation PT Mounted on a ceramic board (2000mm2✕0.8mm), PW≤10s 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (PW≤10µs) Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V 30 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=5A 1.2 RDS(on)1 RDS(on)2 ID=5A, VGS=10V ID=3A, VGS=4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Turn-ON Delay Time td(on) tr td(off) tf Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions IDSS IGSS 3.9 Unit max V 1 µA ±10 µA 2.6 5.5 V S 37 48 mΩ 64 83 mΩ 460 pF 95 pF 75 pF See specified Test Circuit. 15 ns See specified Test Circuit. 20 ns See specified Test Circuit. 30 ns See specified Test Circuit. 20 ns Marking : W261 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1405PA MS IM TB-00001816 No.8749-1/4 FW261 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=5A 8.6 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=5A 2.0 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=5A 1.6 Diode Forward Voltage VSD IS=5A, VGS=0V 0.9 Package Dimensions unit : mm 7005-003 7 6 5 6.0 4.4 0.3 5 1 4 0.2 1.5 1.8 MAX 0.43 0.595 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 0.1 5.0 V Electrical Connection 8 8 nC 1.2 1.27 SANYO : SOP8 Switching Time Test Circuit VDD=15V VIN 10V 0V ID=5A RL=3Ω VIN D VOUT PW=10µs D.C.≤1% G FW261 P.G 50Ω S No.8749-2/4 FW261 ID -- VDS 3.5 V 3.0 V VDS=10V 9 8 2 VGS=2.0V 1 7 6 5 4 Ta=7 5° C °C 25°C 2.5V 3 2 --25 3 ID -- VGS 10 Drain Current, ID -- A Drain Current, ID -- A 4 4.0V 10.0V 8.0V 6.0V 5 1 0 0 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 200 0.5 IT04957 5.0 IT04958 RDS(on) -- Ta 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 150 ID=3A 5A 100 50 1 2 3 4 5 6 7 8 9 10 7 5 10 yfs -- ID 1.0 7 5 25 3 2 0.1 7 5 0.001 2 3 5 7 0.01 2 3 5 7 2 3 0.1 5 7 1.0 2 3 Drain Current, ID -- A --20 0 20 40 60 80 100 120 140 IT04960 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 5 7 0 10 IT04961 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1.4 IT04962 Ciss, Coss, Crss -- VDS 1000 VDD=15V VGS=10V f=1MHz 7 Ciss 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --40 0.001 0.01 7 20 0.01 7 5 3 2 3 2 100 40 2 C 5° --2 C = ° Ta 75 °C 10V S= A, VG I D=5 Ambient Temperature, Ta -- °C VDS=10V 3 2 =4V VGS 60 IT04959 Source Current, IS -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V 3A, I D= 0 --60 0 0 80 Ta= 75°C 25°C --25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 5 td (off) 3 tf 2 3 2 Coss 100 7 Crss 5 tr 10 0.1 2 3 5 7 1.0 td(on) 2 Drain Current, ID -- A 3 5 3 7 10 IT04963 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT10287 No.8749-3/4 FW261 VGS -- Qg 5 3 2 VDS=10V ID=5A 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 10 6 4 2 0 0 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC 9 IT04965 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 8 10 7 5 3 2 ASO 1m ID=5A s 10 10 ms 0m s 1.0 7 5 3 2 0.1 7 5 3 2 <10µs 10 0µ s IDP=20A DC 10 op s era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (2000mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT10288 Mounted on a ceramic board(2000mm2✕0.8mm), PW≤10s 2.2 2.0 1.8 To t al 1.5 di ss ip ati on 1u nit 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10289 Note on usage : Since the FW261 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2005. Specifications and information herein are subject to change without notice. PS No.8749-4/4