SANYO EMH2401

EMH2401
Ordering number : EN8728
N-Channel Silicon MOSFET
EMH2401
General-Purpose Switching Device
Applications
Features
•
•
The EMH2401 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
thereby enabling high-density mounting.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
P-channel
Unit
Drain-to-Source Voltage
VDSS
20
Gate-to-Source Voltage
VGSS
±10
V
3
A
Drain Current (DC)
ID
Drain Current (Pulse)
V
IDP
PD
PW≤10µs, duty cycle≤1%
12
A
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
1.0
W
PT
Tch
Mounted on a ceramic board (900mm2✕0.8mm)
Channel Temperature
Storage Temperature
Tstg
Allowable Power Dissipation
Total Dissipation
1.2
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
Ratings
min
typ
Unit
max
20
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.4
VDS=10V, ID=1.5A
2.4
V
1
µA
±10
µA
1.3
V
76
mΩ
Forward Transfer Admittance
VGS(off)
yfs
ID=1.5A, VGS=4V
ID=0.8A VGS=2.5V
58
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
71
99
mΩ
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
98
150
mΩ
Input Capacitance
RDS(on)3
Ciss
365
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
77
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
67
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
11.2
ns
See specified Test Circuit.
45
ns
td(off)
tf
See specified Test Circuit.
42
ns
See specified Test Circuit.
46
ns
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : LA
4.0
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3005PE MS IM TB-00001823 No.8728-1/4
EMH2401
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=3A
4.9
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=3A
0.7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=3A
2.0
Diode Forward Voltage
VSD
IS=3A, VGS=0V
Package Dimensions
unit : mm
7045-002
0.85
7
6
5
0.2
0.125
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
0.2
4
2.1
5
1.7
8
0.5
V
Electrical Connection
8
0.2
nC
1.2
2.0
0.05
0.75
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
Top view
SANYO : EMH8
Switching Time Test Circuit
VDD=10V
VIN
4V
0V
ID=1.5A
RL=6.67Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
G
EMH2401
P.G
50Ω
S
No.8728-2/4
EMH2401
ID -- VDS
V
V
=1.5
VGS
2.4
1.5
1.0
1.8
1.6
1.4
1.2
1.0
0.8
0.4
0.2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
1.0
0
RDS(on) -- VGS
200
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
180
160
140
1.5A
120
800mA
100
ID=300mA
60
40
20
2
4
8
6
Gate-to-Source Voltage, VGS -- V
, VG
0mA
30
I D=
100
8
I D=
80
60
V
2.5
S=
A, VG
00m
=4.0V
, VGS
.5A
I D=1
40
20
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
5
140
160
IT10406
IS -- VSD
10
7
5
VDS=10V
VGS=0V
3
Source Current, IS -- A
3
5°
2
=
Ta
C
--2
°C
75
1.0
°C
25
7
5
3
2
1.0
7
5
3
2
0.6
0.7
0.1
7
5
3
2
2
0.1
0.01
V
1.8
S=
120
25
°C
--2
5°C
7
140
IT10405
yfs -- ID
2.0
IT10404
160
5°C
10
1.5
RDS(on) -- Ta
0
--60
0
0
1.0
180
Ta=25°C
80
0.5
Gate-to-Source Voltage, VGS -- V
IT10403
Ta=
7
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
2.0
0.6
0
Forward Transfer Admittance, yfs -- S
2.2
25°C --25°
C
2.0
Ta=
75°
C
Drain Current, ID -- A
3.0
V
6.0V
2.6
0.5
2
3
5 7 0.1
2
3
5 7 1.0
2
3
0.01
0.3
5 7 10
IT10407
Drain Current, ID -- A
0.5
Ciss, Coss, Crss -- pF
100
td(off)
tf
3
2
tr
1.0
1.1
IT10408
f=1MHz
5
5
0.9
7
2
7
0.8
Ciss, Coss, Crss -- VDS
1000
VDD=10V
VGS=4V
3
0.4
Diode Forward Voltage, VSD -- V
SW Time -- ID
5
Switching Time, SW Time -- ns
VDS=10V
2.8
8.0V
Drain Current, ID -- A
2.5
ID -- VGS
3.0
1.8
4.0V
2.5V
2.0
V
3.0
td(on)
Ciss
3
2
100
Coss
7
Crss
5
10
3
7
5
0.01
2
2
3
5
7 0.1
2
3
5
7 1.0
Drain Current, ID -- A
2
3
5
7
IT10409
0
5
10
15
20
Drain-to-Source Voltage, VDS -- V
IT10410
No.8728-3/4
EMH2401
VGS -- Qg
3
2
VDS=10V
ID=3A
3.5
10
7
5
3.0
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
4.0
2.5
2.0
1.5
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Total Gate Charge, Qg -- nC
4.5
5.0
IT10411
PD -- Ta
1.4
IDP=12A
<10µs
10
0
1m µs
s
ID=3A
DC
10
m
op
er
1.0
7
5
3
2
10
ati
on
Operation in this
area is limited by RDS(on).
s
0m
s
(T
a=
25
°C
)
0.1
7
5
3
2
0.5
0
Allowable Power Dissipation, PD -- W
3
2
ASO
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT10412
Mounted on a ceramic board (900mm2✕0.8mm)
1.2
1.0
To
t
al
0.8
di
ss
1u
0.6
nit
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10413
Note on usage : Since the EMH2401 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2005. Specifications and information herein are subject
to change without notice.
PS No.8728-4/4