EMH2401 Ordering number : EN8728 N-Channel Silicon MOSFET EMH2401 General-Purpose Switching Device Applications Features • • The EMH2401 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions P-channel Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±10 V 3 A Drain Current (DC) ID Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% 12 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.0 W PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.2 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V Ratings min typ Unit max 20 VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 VDS=10V, ID=1.5A 2.4 V 1 µA ±10 µA 1.3 V 76 mΩ Forward Transfer Admittance VGS(off) yfs ID=1.5A, VGS=4V ID=0.8A VGS=2.5V 58 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 71 99 mΩ ID=0.3A, VGS=1.8V VDS=10V, f=1MHz 98 150 mΩ Input Capacitance RDS(on)3 Ciss 365 pF Output Capacitance Coss VDS=10V, f=1MHz 77 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 67 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 11.2 ns See specified Test Circuit. 45 ns td(off) tf See specified Test Circuit. 42 ns See specified Test Circuit. 46 ns Rise Time Turn-OFF Delay Time Fall Time Marking : LA 4.0 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N3005PE MS IM TB-00001823 No.8728-1/4 EMH2401 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=4V, ID=3A 4.9 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.7 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 2.0 Diode Forward Voltage VSD IS=3A, VGS=0V Package Dimensions unit : mm 7045-002 0.85 7 6 5 0.2 0.125 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 0.2 4 2.1 5 1.7 8 0.5 V Electrical Connection 8 0.2 nC 1.2 2.0 0.05 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view SANYO : EMH8 Switching Time Test Circuit VDD=10V VIN 4V 0V ID=1.5A RL=6.67Ω VIN D VOUT PW=10µs D.C.≤1% G EMH2401 P.G 50Ω S No.8728-2/4 EMH2401 ID -- VDS V V =1.5 VGS 2.4 1.5 1.0 1.8 1.6 1.4 1.2 1.0 0.8 0.4 0.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 1.0 0 RDS(on) -- VGS 200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 140 1.5A 120 800mA 100 ID=300mA 60 40 20 2 4 8 6 Gate-to-Source Voltage, VGS -- V , VG 0mA 30 I D= 100 8 I D= 80 60 V 2.5 S= A, VG 00m =4.0V , VGS .5A I D=1 40 20 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 5 140 160 IT10406 IS -- VSD 10 7 5 VDS=10V VGS=0V 3 Source Current, IS -- A 3 5° 2 = Ta C --2 °C 75 1.0 °C 25 7 5 3 2 1.0 7 5 3 2 0.6 0.7 0.1 7 5 3 2 2 0.1 0.01 V 1.8 S= 120 25 °C --2 5°C 7 140 IT10405 yfs -- ID 2.0 IT10404 160 5°C 10 1.5 RDS(on) -- Ta 0 --60 0 0 1.0 180 Ta=25°C 80 0.5 Gate-to-Source Voltage, VGS -- V IT10403 Ta= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2.0 0.6 0 Forward Transfer Admittance, yfs -- S 2.2 25°C --25° C 2.0 Ta= 75° C Drain Current, ID -- A 3.0 V 6.0V 2.6 0.5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.3 5 7 10 IT10407 Drain Current, ID -- A 0.5 Ciss, Coss, Crss -- pF 100 td(off) tf 3 2 tr 1.0 1.1 IT10408 f=1MHz 5 5 0.9 7 2 7 0.8 Ciss, Coss, Crss -- VDS 1000 VDD=10V VGS=4V 3 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 5 Switching Time, SW Time -- ns VDS=10V 2.8 8.0V Drain Current, ID -- A 2.5 ID -- VGS 3.0 1.8 4.0V 2.5V 2.0 V 3.0 td(on) Ciss 3 2 100 Coss 7 Crss 5 10 3 7 5 0.01 2 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 IT10409 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V IT10410 No.8728-3/4 EMH2401 VGS -- Qg 3 2 VDS=10V ID=3A 3.5 10 7 5 3.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.0 2.5 2.0 1.5 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Total Gate Charge, Qg -- nC 4.5 5.0 IT10411 PD -- Ta 1.4 IDP=12A <10µs 10 0 1m µs s ID=3A DC 10 m op er 1.0 7 5 3 2 10 ati on Operation in this area is limited by RDS(on). s 0m s (T a= 25 °C ) 0.1 7 5 3 2 0.5 0 Allowable Power Dissipation, PD -- W 3 2 ASO Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT10412 Mounted on a ceramic board (900mm2✕0.8mm) 1.2 1.0 To t al 0.8 di ss 1u 0.6 nit ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10413 Note on usage : Since the EMH2401 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS No.8728-4/4