VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP (Ultrafast NPT IGBT), 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient Available • 10 μs short circuit capability Available • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery and low VF • Al2O3 DBC • Optional SMD thermistor (NTC) • Very low stray inductance design for high speed operation MTP • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. PRODUCT SUMMARY VCES 1200 V VCE(on) typical at VGE = 15 V 3.36 V IC at TC = 25 °C 80 A Speed 8 kHz to 30 kHz Package MTP Circuit Half bridge BENEFITS • Optimized for welding, UPS and SMPS applications • Rugged with ultrafast performance • Benchmark efficiency above 20 kHz • Outstanding ZVS and hard switching operation • Low EMI, requires less snubbing • Excellent current sharing in parallel operation • Direct mounting to heatsink • PCB solderable terminals • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter breakdown voltage Continuous collector current SYMBOL TEST CONDITIONS VCES IC MAX. UNITS 1200 V TC = 25 °C 80 TC = 104 °C 40 Pulsed collector current ICM 160 Clamped inductive load current ILM 160 Diode continuous forward current IF A TC = 105 °C 21 Diode maximum forward current IFM 160 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation (only IGBT) PD V Any terminal to case, t = 1 min 2500 TC = 25 °C 463 TC = 100 °C 185 W Revision: 18-Jun-15 Document Number: 94507 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage Transconductance Zero gate voltage collector current Gate to emitter leakage current SYMBOL V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES IGES TEST CONDITIONS MIN. TYP. MAX. UNITS 1200 - - V VGE = 0 V, IC = 3 mA (25 °C to 125 °C) - +1.1 - V/°C VGE = 15 V, IC = 40 A - 3.36 3.59 VGE = 15 V, IC = 80 A - 4.53 4.91 VGE = 15 V, IC = 40 A, TJ = 150 °C - 3.88 4.10 VGE = 15 V, IC = 80 A, TJ = 150 °C - 5.35 5.68 VCE = VGE, IC = 500 μA 4 - 6 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -12 - mV/°C VCE = 50 V, IC = 40 A, PW = 80 μs - 35 - S VGE = 0 V, VCE = 1200 V, TJ = 25 °C - - 250 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.4 1.0 VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 0.2 10 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS VGE = 0 V, IC = 250 μA V mA SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres TEST CONDITIONS - 399 599 VCC = 600 V VGE = 15 V - 43 65 - 187 281 VCC = 600 V, IC = 40 A, VGE = 15 V, Rg = 5 , L = 200 μH, TJ = 25 °C, energy losses include tail and diode reverse recovery - 1.14 1.71 - 1.35 2.02 - 2.49 3.73 - 1.60 2.40 - 1.62 2.43 - 3.22 4.82 - 5521 8282 - 380 570 - 171 257 IC = 40 A VCC = 600 V, IC = 40 A, VGE = 15 V, Rg = 5 , L = 200 μH, TJ = 125 °C, energy losses include tail and diode reverse recovery VGE = 0 V VCC = 30 V f = 1.0 MHz Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 160 A VCC = 1000 V, Vp = 1200 V Rg = 5 , VGE = + 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C, VCC = 900 V, Vp = 1200 V Rg = 5 , VGE = + 15 V to 0 V nC mJ pF Fullsquare 10 - - μs Revision: 18-Jun-15 Document Number: 94507 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Diode forward voltage drop MIN. TYP. MAX. IC = 40 A - 2.98 3.38 IC = 80 A - 3.90 4.41 IC = 40 A, TJ = 125 °C - 3.08 3.39 IC = 80 A, TJ = 125 °C - 4.29 4.72 IC = 40 A, TJ = 150 °C - 3.12 3.42 VGE = 15 V, Rg = 5 , L = 200 μH VCC = 600 V, IC = 40 A TJ = 125 °C - 574 861 μJ - 120 180 ns - 43 65 A MIN. TYP. MAX. UNITS T0 = 25 °C - 30 - k T0 = 25 °C T1 = 85 °C - 4000 - K MIN. TYP. MAX. UNITS TJ -40 - 150 TStg -40 - 125 - - 0.29 - - 0.61 Heatsink compound thermal conductivity = 1 W/mK - 0.06 - External shortest distance in air between 2 terminals 5.5 - - Shortest distance along external surface of the insulating material between 2 terminals 8 - - VFM Reverse recovery energy of the diode Erec Diode reverse recovery time trr Peak reverse recovery current Irr TEST CONDITIONS UNITS V THERMISTOR SPECIFICATIONS (40MT120UHTAPbF only) PARAMETER SYMBOL Resistance R0 Sensitivity index of the thermistor material (1) (1)(2) TEST CONDITIONS Notes (1) T , T are thermistor´s temperatures 0 1 R0 1 1 (2) ------- = exp ----- – ------ , temperature in Kelvin T R T 1 0 1 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case Diode Case to sink per module Clearance (1) Creepage (2) Mounting torque to heatsink Weight RthJC RthCS A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. °C/W mm 3 ± 10 % Nm 66 g Revision: 18-Jun-15 Document Number: 94507 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors 100 1000 80 100 IC (A) IC (A) 60 40 10 20 1 0 0 20 40 60 80 10 100 120 140 160 100 1000 10 000 VCE (V) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 600 Fig. 4 - Reverse BIAS SOA TJ = 150 °C; VGE = 15 V 160 VGE = 18V 140 500 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 400 ICE (A) PD (W) 100 300 80 60 200 40 100 20 0 0 0 20 40 60 80 0 100 120 140 160 2 4 6 8 10 T C (°C) VCE (V) Fig. 2 - Power Dissipation vs. Case Temperature Fig. 5 - Typical IGBT Output Characteristics TJ = - 40 °C; tp = 80 μs 160 1000 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 140 100 120 IC (A) 10 μs 100 μs 1 80 60 10ms 40 DC 0.1 ICE (A) 100 10 20 0.01 0 1 10 100 1000 10000 0 2 4 6 8 10 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25 °C; TJ 150 °C Fig. 6 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 80 μs Revision: 18-Jun-15 Document Number: 94507 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors 20 160 VGE = 18V 140 120 16 ICE = 20A 14 V CE (V) 100 ICE (A) ICE = 80A ICE = 40A 18 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 80 60 12 10 8 6 40 4 20 2 0 0 0 2 4 6 8 10 5 10 VCE (V) 20 Fig. 10 - Typical VCE vs. VGE TJ = 25 °C Fig. 7 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 80 μs 20 120 ICE = 80A ICE = 40A 18 -40°C 25°C 125°C 100 16 ICE = 20A 14 V CE (V) 80 IF (A) 15 V GE (V) 60 40 12 10 8 6 4 20 2 0 0 0.0 1.0 2.0 3.0 4.0 5 5.0 10 VF (V) Fig. 8 - Typical Diode Forward Characteristics tp = 80 μs 20 Fig. 11 - Typical VCE vs. VGE TJ = 125 °C 20 350 ICE = 80A ICE = 40A 18 16 T J = 25°C 300 T J = 125°C ICE = 20A 14 250 12 ICE (A) V CE (V) 15 V GE (V) 10 8 6 200 150 100 4 50 2 0 0 5 10 15 V GE (V) Fig. 9 - Typical VCE vs. VGE TJ = - 40 °C 20 0 5 10 15 20 VGE (V) Fig. 12 - Typical Transfer Characteristics VCE = 50 V; tp = 10 μs Revision: 18-Jun-15 Document Number: 94507 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors 4800 10 000 4200 Swiching Time (ns) Energy (μJ) 3600 3000 2400 1800 EON 1200 600 tdOFF 1000 tdON tR tF 100 EOFF 0 10 0 20 40 60 80 0 100 10 20 30 40 50 60 Rg (Ω) IC (A) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 250 μH; VCE = 400 V Rg = 5 ; VGE = 15 V Fig. 16 - Typical Switching Time vs. Rg TJ = 150 °C; L = 250 μH; VCE = 600 V ICE = 40 A; VGE = 15 V 50 1000 Rg = 5.0Ω tdOFF 40 30 Rg = 30 Ω 20 Rg = 50 Ω Irr (A) Swiching Time (ns) Rg = 10 Ω 100 tR tdON 10 tF 10 0 0 20 40 60 80 100 10 20 30 IC (A) 40 50 60 70 IF (A) Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 250 μH; VCE = 400 V Rg = 5 ; VGE = 15 V Fig. 17 - Typical Diode Irr vs. IF TJ = 125 °C 6000 50 EON 5000 4000 Irr (A) Energy (μJ) 40 EOFF 30 3000 20 2000 10 1000 0 10 20 30 40 50 60 0 10 20 30 40 50 Rg (Ω) Rg (Ω) Fig. 15 - Typical Energy Loss vs. Rg TJ = 150 °C; L = 250 μH; VCE = 600 V ICE = 40 A; VGE = 15 V Fig. 18 - Typical Diode Irr vs. Rg TJ = 125 °C; IF = 40 A 60 Revision: 18-Jun-15 Document Number: 94507 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors 50 10000 45 Cies Capacitance (pF) 40 Irr (A) 35 30 25 1000 Coes 100 Cres 20 15 10 10 0 200 400 600 800 0 1000 20 40 80 100 Fig. 21 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz Fig. 19 - Typical Diode Irr vs. dIF/dt VCC = 600 V; VGE = 15 V; ICE = 40 A; TJ = 125 °C 5.0 16 60A 4.5 14 600V 40A 4.0 12 3.5 10 3.0 2.5 50 Ω 20A 30 Ω 2.0 VGE (V) Q rr (μC) 60 VCE (V) dIF /dt (A/μs) 10 Ω 8 6 5.0 Ω 1.5 4 1.0 2 0.5 0 0.0 0 200 400 600 800 1000 0 1200 100 200 300 400 500 dI F /dt (A/μs) Q G , Total Gate Charge (nC) Fig. 20 - Typical Diode Qrr vs. dIF/dt VCC = 600 V; VGE = 15 V; TJ = 125 °C Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 μH Thermal Response ( Z thJC ) 1 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 ττ J 0.001 0.0001 1E-005 1E-006 R1 R1 τJ ττ 1 R2 R2 ττ C τ τ1 ττ 2 ττ 3 τ2 Ci= τi/Ri τi/Ri Ci= i/Ri 0.0001 τ3 Ri (°C/W) τi τi (sec) 0.043 0.001214 0.105 0.044929 0.123 1.1977 1.1977 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE) RESPONSE ) 1E-005 R3 R3 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Revision: 18-Jun-15 Document Number: 94507 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 τJ R2 R2 τC τ2 τ1 τ τ2 Ri (°C/W) τi (sec) 0.024 0.00008 0.549 0.000098 Ci= τi/Ri Ci i/Ri 0.01 0.001 1E-006 R1 R1 τJ τ1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE) 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode) 3, 4 2 T 11 12 R 5, 6 1 Thermistor option only for 40MT120UHTAPbF 9 10 7, 8 Fig. 25 - Electrical diagram Revision: 18-Jun-15 Document Number: 94507 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors Driver L + - D.U.T. 0 VCC D + C - 1K 900 V D.U.T. Fig. CT.1 - Gate Charge Circuit (Turn-Off) Fig. CT.3 - S.C. SOA Circuit Diode clamp/ D.U.T. L L - + 80 V + - -5V D.U.T. Rg D.U.T./ driver 1000 V + VCC Rg Fig. CT.2 - RBSOA Circuit Fig. CT.4 - Switching Loss Circuit Revision: 18-Jun-15 Document Number: 94507 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 MT 120 U H T A PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (40 = 40 A) 3 - Essential part number 4 - Voltage code (120 = 1200 V) 5 - Speed/type (U = Ultrafast IGBT) 6 - Circuit configuration (H = Half bridge) 7 - Special option: None = No special option T = Thermistor 8 - A = Al2O3 DBC substrate 9 - PbF = Lead (Pb)-free CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95175 Revision: 18-Jun-15 Document Number: 94507 10 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors MTP DIMENSIONS in millimeters 39.5 ± 0.3 12 ± 0.3 3.0 2.1 Ø 1.1 ± 0.025 1.5 12 ± 0.3 16 ± 0.3 2.5 ± 0.1 5 z detail Use self tapping screw or M 2.5 x X e.g. M 2.5 x 6 or M 2.5 x 8 according to PCB thickness used 45 ± 0.1 63.5 ± 0.15 0.8 Ra 1.3 7.4 48.7 ± 0.3 14.7 15 12 4.2 9 33.2 ± 0.3 6 1.2 4 3 6 5 2 13 10 11 12 5.2 9 22.7 1 45° 5.4 19.8 ± 0.1 8 7 31.8 ± 0.15 Dia. 5 (x 4) Ø 2.1 (x 4) R 2.6 (x 2) 3 27.5 ± 0.3 6 Pins position with tolerance 0.6 11.5 14.7 Note • Unused terminals are not assembled in the package Revision: 01-Jul-15 Document Number: 95175 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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