Ordering number : ENN6497A Monolithic Digital IC LB11975 High-Speed CD-ROM Spindle Motor Driver IC Overview Package Dimensions The LB11975 is a monolithic bipolar IC developed for uses as a spindle motor driver for high-speed CD-ROM and DVD-ROM drives. To minimize heat generation during high-speed rotation and braking, the LB11975 adopts direct PWM drive in the output stage. During reverse braking the upper and lower side output transistors are both driven in PWM mode to implement dual PWM controlled braking. The device thus controls the current to remain under a limit value and prevent rapid heat generation. This prevents device destruction due to rapid heating. The absolute maximum voltage rating is 27 V, and the maximum current is 2.5 A. unit: mm 3251-HSOP36R [LB11975] 17.8 (6.2) 10.5 0.25 2.25 0.3 2.45max 0.1 2.7 SANYO: HSOP36R Allowable power dissipation, Pd max — W Direct PWM drive (lower side control) Built-in upper and lower side output diodes Supports the use 3.3 V DSP devices. Power saving function for standby mode Hall FG output (1 or 3 Hall device operation) Built-in Hall device power supply Reverse rotation detection output and drive cutoff circuit Voltage control amplifier Current limiter circuit Thermal protection circuit 18 2.0 0.8 0.65 1 (0.5) Functions and Features • • • • • • • • • • 19 (4.9) 7.9 36 Pd max — Ta 2.4 2.1 2.0 Mounted on the specified printed circuit (114.3 × 76.1 × 1.6 mm3 glass epoxy board) 1.6 1.26 1.2 Independent IC 0.9 0.8 0.54 0.4 0 –20 0 20 40 60 80 100 Ambient temperature, Ta — °C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11201RM (OT) No. 6497-1/12 LB11975 Specifications Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Supply voltage 1 VCC1 max 7 V Supply voltage 2 VCC2 max 27 V Supply voltage 3 V VCC3 max 27 Output current IO max 2.5 A Output applied voltage VIN max 30 V Allowable power dissipation 1 Pd max1 Independent IC 0.9 W Pd max2 Mounted on the specified circuit board (114.3 × 76.1 × 1.6 mm3 glass epoxy board) 2.1 W Allowable power dissipation 2 Operating temperature Topr –20 to +75 °C Storage temperature Tstg –55 to +150 °C Ratings Unit Allowable Operating Ranges at Ta = 25°C Parameter Symbol Power-supply voltage range 1 VCC1 Power-supply voltage range 2 VCC2 Power-supply voltage range 3 Conditions 4 to 6 VCC2 ≥ VCC1 V 4 to 16 V VCC3 4 to 16 V FG pin applied voltage VFG 0 to VCC1 FG pin output current IFG 0 to 4.0 V mA Electrical Characteristics at Ta = 25°C, VCC1 = 5 V, VCC2 = VS = 12 V Parameter Supply current 1 Supply current 2 Supply current 3 Symbol Conditions ICC1-1 VCTL = VCREF ICC1-2 VS/S = 0 V ICC2-1 VCTL = VCREF ICC2-2 VS/S = 0 V ICC3-1 VCTL = VCREF ICC3-2 VS/S = 0 V Ratings min typ 5.0 5.0 max Unit 8.0 11.0 0 200 mA µA 6.5 8.0 mA 0 200 µA 0.3 0.7 mA 0 200 µA V [Output Block] Output saturation voltage 1 Output saturation voltage 2 Output leakage current Diode forward voltage VOsat1(L) IO = 0.5 A, VO(sink), VCC1 = 5 V, VCC2 = VCC3 = 12 V 0.15 0.25 VOsat1(H) IO = 0.5 A, VO(source), VCC1 = 5 V, VCC2 = VCC3 = 12 V 0.80 0.95 V VOsat2(L) IO = 1.5 A, VO(sink), VCC1 = 5 V, VCC2 = VCC3 = 12 V 0.40 0.60 V VOsat2(H) IO = 1.5 A, VO(source), VCC1 = 5 V, VCC2 = VCC3 = 12 V 1.10 1.30 V 100 µA IOleak(L) IOleak(H) –100 µA VFH Upper side diode, IO = 2.0 A 1.50 2.00 V VFL Lower side diode, IO = 2.0 A 1.50 2.00 V [Hall Amplifier Block] IHB –4 Common-mode input voltage range VICM 1.5 Hall input sensitivity VHIN 60 Input bias current –1 µA VCC – 1.5 V mVp-p ∆VIN(HA) 23 32 39 mV Input voltage: low → high VSLH 6 16 25 mV Input voltage: high → low VSLL –25 –16 –6 mV 150 180 210 Hysteresis [Thermal Protection Circuit] Operating temperature T-TSD Design target value (junction temperature) * Hysteresis ∆TSD Design target value (junction temperature) * Note: * These are design target values and are not tested. 40 °C °C Continued on next page. No. 6497-2/12 LB11975 Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit [PWM Oscillator] High-level output voltage VOH(OSC) 3.1 3.3 3.5 V Low-level output voltage VOL(OSC) 1.4 1.6 1.8 V 1.7 1.9 Vp-p Amplitude V(OSC) Oscillator frequency f(OSC) Charge current 1.5 C = 2200 pF 23.0 ICHG Charge resistor value RDCHG kHz –110 –94 –83 µA 1.6 2.1 2.6 kΩ [CTL Amplifier] IVCTL VCTL = VCREF = 1.65 V –2 VCREF pin input current IVCREF VCTL = VCREF = 1.65 V –2 Forward rotation gain GDF+ Design target value * 0.20 0.25 0.30 times Reverse rotation gain GDF– Design target value * –0.30 –0.25 –0.20 times Forward rotation limiter voltage VRF1 0.26 0.29 0.32 V Reverse rotation limiter voltage VRF2 0.26 0.29 0.32 V Startup voltage VCTH VCREF = 1.65 V. Design target value * 1.50 Dead zone VDZ VCREF = 1.65 V. Design target value * 35 Low-level output voltage VFGL IFG = 2 mA Pull-up resistor value RFG VCTL pin input current µA µA 1.80 V 80 140 mV 0.4 V 7.5 10 12.5 kΩ 0.4 V 7.5 10 12.5 kΩ [FG Pin] (speed pulse output) [RS Pin] Low-level output voltage VRSL Pull-up resistor value RRS IRS = 2 mA [Stop/Start Pin] Low-level input voltage VSSL High-level input voltage VSSH 0 2.0 Low-level input current ISSL VSS = 0 V High-level input current ISSH VSS = 5.0 V –1 0.7 V VCC1 V 0 µA 50 200 0.85 1.05 µA [Hall Device Power Supply] Hall device supply voltage VH Allowable current IH IH = 5 mA 0.65 20 V mA Note: * These are design target values and are not tested. Truth Table Input IN1 IN2 Control voltage VCTL 1 H L H 2 H L L 3 H H L 4 L H L 5 L H H 6 L L H Output Source → Sink IN3 H OUT2 → OUT1 L OUT1 → OUT2 H OUT3 → OUT1 L OUT1 → OUT3 H OUT3 → OUT2 L OUT2 → OUT3 H OUT1 → OUT2 L OUT2 → OUT1 H OUT1 → OUT3 L OUT3 → OUT1 H OUT2 → OUT3 L OUT3 → OUT2 FG output FG1 FG2 L H L L L H H L H H H L FG1 FG2 No. 6497-3/12 IN3– 18 IN3+ 19 IN2– 20 IN2+ 21 IN1– 22 IN1+ 23 26 FG1 25 FG2 24 RS Rotation direction detection TSD MATRIX & LOGIC S/S S/S 15 HALL BIAS VH 16 10 PWM OSC 11 FC 27 CURR LIM VCC1 12 PH VCC3 13 14 VCREF VCTL (29) VCC3 (7, 30, 31) GND2 A13185 17 GND1 6 (36) OUT1 (2) 1 OUT2 (4) 3 OUT3 35 28 Rf 9 VCC2 8 LB11975 Block Diagram No. 6497-4/12 LB11975 Pin Assignment 1 OUT2 OUT1 36 2 OUT2 OUT1 35 3 OUT3 NC 34 4 OUT3 NC 33 5 NC NC 32 6 GND2 GND2 31 7 GND2 GND2 30 8 VCC3 VCC3 29 9 VCC2 FR FRAME GND 10 PWM LB11975 RF 28 FRAME FR GND VCC1 27 11 FC FG1 26 12 PH FG2 25 13 VCREF RS 24 14 VCTL IN1+ 23 15 S/S IN1- 22 16 VH IN2+ 21 17 GND1 IN2- 20 18 IN3- IN3+ 19 Top view No. 6497-5/12 H H H 0.01µF 0.01µF 0.01µF 21 22 23 IN3– IN3+ 18 19 20 IN2– IN2+ IN1– IN1+ 26 FG1 25 FG2 24 RS Rotation direction detection 10kΩ×3 VCC1 TSD MATRIX & LOGIC S/S S/S 15 HALL BIAS VH 16 10 PWM 2200pF OSC 11 FC 0.01µF CURR LIM VCC1 27 12 PH VCC3 13 VCREF 1.65V 14 VCTL 17 6 3 1 35 28 9 8 GND1 GND2 OUT3 OUT2 OUT1 Rf VCC2 VCC3 A13186 C LB11975 Sample Application Circuit No. 6497-6/12 LB11975 Pin Functions Pin No. Pin Pin voltage Function VCC2 4 V to 16 V Supplies the source side pre-drive voltage. VCC3 4 V to 16 V Supplies the motor drive voltage. 27 VCC1 4 V to 16 V Supply voltage for all circuits other than the output transistors and the source side pre-drive voltage 24 RS 9 8 29 Equivalent circuit Reverse rotation detection High-level output: Forward rotation Low-level output: Reverse rotation 26 FG1 Single Hall device waveform Schmitt comparator synthesized output 25 FG2 Three Hall device waveform Schmitt comparator synthesized output 23 IN1+ 22 IN1– 21 IN2+ 20 IN2– 19 IN3+ 18 IN3– VCC 1 10kΩ 24 25 26 U phase Hall device input. Logic high refers to the state where IN1+ > IN1–. 1.5 V to VCC1 – 1.5 V V phase Hall device input. Logic high refers to the state where IN2+ > IN2–. W phase Hall device input. Logic high refers to the state where IN3+ > IN3–. VCC 1 19 500Ω 500Ω 18 21 20 23 22 VCC1 16 16 Provides the Hall device lower side bias voltage. VH 30kΩ 2kΩ VCC1 15 17 S/S GND1 0 V to VCC1 All circuits can be set to the non-operating state by setting this pin to 0.7 V or under, or by setting it to the open state. This pin must be held at 2 V or higher. 75kΩ 15 50kΩ Ground for all circuits except the output Continued on next page. No. 6497-7/12 LB11975 Continued from preceding page. Pin No. Pin Pin voltage Function Equivalent circuit Control loop frequency characteristics correction 11 VCC 1 11 Closed loop oscillation in the current control system can be stopped by connecting a capacitor between this pin and ground. FC 10 500Ω 500Ω 500Ω 2kΩ 10 PWM 13 VCREF PWM oscillator capacitor connection 0 V to VCC1 – 1.5 V 65kΩ Control reference voltage input VCC 1 The control start voltage is determined by this voltage. Speed control voltage input 14 VCTL 0 V to VCC1 – 1.5 V This IC implements a voltage control system in which VC > VCREF means forward rotation and VC < VCREF means slow foward rotation. 500Ω 500Ω 14 13 (This IC includes reverse rotation prevention circuit, so reverse rotation will not occur.) 3, 4 6, 7 30, 31 OUT3 W phase output GND2 Ground for the output transistors 1, 2 OUT2 V phase output 35, 36 OUT1 U phase output VCC1 VCC3 VCC2 28 2kΩ 1 Upper side npn transistor collector (shared by all three phases) 28 RF Connect a resistor between VCC3 and the RF pin for current detection. The fixed current control system and the current limiter operate by detecting this voltage. 2 3 35 36 4 2kΩ 6 7 30 31 VCC1 Peak hold circuit capacitor connection. 12 PH Connect a capacitor to this pin to smooth the voltage detected by the resistor RF. 12 300Ω 11kΩ No. 6497-8/12 LB11975 Torque Command Figure 1 shows the relationship between the control voltage (VCTL) and the RF voltage. Forward rotation VRF Dead zone Offset voltage VCREF=1.65V 3mV 1.65V VCTL Figure 1 Truth Table Operation VCTL > VCREF Forward rotation VCREF > VCTL Reverse torque braking * Note: * Since this IC includes a reverse rotation prevention circuit, although the IC will brake the motor if the motor is rotating and VCTL < VCREF, when reverse rotation is detected, the IC will turn the output off, thus stopping motor rotation. Reverse Rotation Detection Circuit Truth Table RS pin Forward rotation HIGH Reverse rotation LOW D IN1+ OUT Q CK R IN1– During forward rotation: The OUT signal is set high to reset DFF. During reverse rotation: D IN2+ Reverse rotation is detected when the Hall comparator output falls. CK IN2– Q R At that point the OUT signal is set to the low level. D IN3+ CK IN3– R Q VCTL VCREF Figure 2 Reverse Rotation Detection Circuit Block Diagram No. 6497-9/12 LB11975 Hall comparator (IN1, IN2, and IN3) IN1 waveforms IN2 IN3 Reverse rotation is detected with this timing. Figure 3 Reverse Rotation Timing Chart Overview of Reverse Torque Braking (This circuit uses a direct PWM drive technique and allows the current limiter to operate during reverse torque braking.) In earlier direct PWM motor drivers, speed control was implemented by applying PWM to only one (either the upper or lower) output transistor. With this type of driver, the regenerative current formed during reverse torque braking operated as a short-circuit braking. As a result problems such as the coil current exceeding the limit value and IOmax being exceeded, would occur. To prevent these problems, the LB11975 switches both the upper and lower side output transistors during reverse torque braking to suppress the generation of overcurrents due to regenerative currents when the PWM is off and allows the optimal design of drive currents. Supplementary Documentation Coil current during reverse torque braking (1) Earlier ICs, with the lower side transistor was switched and the upper side transistor used for current detection (RF) During reverse torque braking, when the coil current increases and the limit is reached, the lower side output transistor is turned off. At this time the regenerative current flows through the upper side transistor. The circuit path is as follows: Coil → upper side diode → VCC → RF → upper side transistor → coil During regeneration, the upper side transistor is on and the back EMF that occurs at the upper side transistor’s emitter pin has a low potential, and since the upper side transistor is fully on at that point, the circuit functions as short-circuit braking. Even if the regenerative current results in the RF voltage reaching the limit voltage, since the upper side transistor cannot be turned off, the limit circuit will not operate and a coil current in excess of IOmax may occur. (2) Earlier ICs, with the upper side transistor was switched and the upper side transistor used for current detection (RF) During reverse torque braking, when the coil current increases and the limit is reached, the upper side output transistor is turned off. At this time the regenerative current flows through the lower side transistor. The circuit path is as follows: Coil → lower side transistor → ground → lower side diode → coil During regeneration, the lower side transistor is on and the back EMF that occurs at the lower side transistor’s collector pin has a high potential, and since the lower side transistor is fully on at that point, the circuit functions as short-circuit braking. Since the regenerative current does not flow through the RF pin, the current limiter circuit does not operate, and a current in excess of IOmax may occur in the lower side transistor. No. 6497-10/12 LB11975 (3) When both the upper and lower side transistors are switched and current detection (RF) is performed in the upper side transistor During reverse torque braking, when the coil current increases and the limit is reached, both the upper and lower side transistors are turned off. The motor current circuit path at this point is as follows: Coil → upper side diode → VCC → power supply line capacitor → ground → lower side diode → coil When the limiter circuit operates, both the upper and lower side transistors are turned off, so short-circuit breaking does not occur, and coil current attenuation is all that occurs. Thus this technique allows current control at the set (limiter) current to be performed even during reverse torque braking. Regenerative Current Path RF + – A13187 Drive Mode No. 6497-11/12 LB11975 Braking Mode Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. PS No. 6497-12/12