® FRFET FQA13N50CF 500V N-Channel MOSFET Features Description • • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 15A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge (typical 43nC) Low Crss (typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode (typical 100ns) RoHS compliant D G TO-3P G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA13N50CF Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 15 A IDM Drain Current - Pulsed - Continuous (TC = 100°C) (Note 1) 9.5 A 60 A ± 30 V 860 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 21.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8''"from case for 5 seconds - Derate above 25°C 4.5 V/ns 218 W 1.56 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2007 Fairchild Semiconductor Corporation FQA13N50CF Rev. A1 1 Typ Max Units -- 0.58 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET July 2007 Device Marking Device Package Reel Size Tape Width Quantity FQA13N50CF FQA13N50CF TO-3P -- -- 30 FQA13N50CF FQA13N50CF_F109 TO-3PN -- -- 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.43 0.48 Ω -- 15 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5A gFS Forward Transconductance VDS = 40 V, ID = 7.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1580 2055 pF -- 180 235 pF -- 20 25 pF -- 25 60 ns -- 100 210 ns -- 130 270 ns -- 100 210 ns -- 43 56 nC -- 7.5 -- nC -- 18.5 -- nC 15 A Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time VDD = 250 V, ID = 15A, RG = 25 Ω (Note 4, 5) tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 400 V, ID = 15A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15 A -- -- 1.4 V trr Reverse Recovery Time 100 -- ns Reverse Recovery Charge VGS = 0 V, IS = 15 A, dIF / dt = 100 A/µs -- Qrr -- 0.4 -- µC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.6mH, IAS =15A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 15A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 FQA13N50CF Rev. A1 www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 150°C -55°C 25°C 0 10 Notes : 1. 250us Pulse Test 2. TC = 25°C Notes : 1. VDS = 40V 2. 250µs Pulse Test -1 10 -1 10 -1 0 10 2 1 10 10 4 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 6 VGS = 10V 1.0 VGS = 20V 0.5 Note : TJ = 25°C 1 10 0 10 150°C Notes : 1. VGS = 0V 25°C 2. 250µs Pulse Test -1 0 5 10 15 20 25 30 10 35 0.2 0.4 ID, Drain Current [A] 0.6 0.8 Figure 5. Capacitance Characteristics 1.2 1.4 Figure 6. Gate Charge Characteristics 12 3000 Ciss = Cgs + Cgd (Cds = shorted) VDS = 100V Coss = Cds + Cgd 10 VGS, Gate-Source Voltage [V] Crss = Cgd 2500 Ciss Capacitance [pF] 1.0 VSD, Source-Drain voltage [V] 2000 Coss 1500 Notes ; 1. VGS = 0 V 1000 Crss 2. f = 1 MHz 500 VDS = 250V VDS = 400V 8 6 4 2 Note : ID = 15A 0 -1 10 0 10 0 1 10 0 VDS, Drain-Source Voltage [V] 20 30 40 50 QG, Total Gate Charge [nC] 3 FQA13N50CF Rev. A1 10 www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250 µA 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 7.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 16 Operation in This Area is Limited by R DS(on) 2 14 10 µs 12 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 1 10 10 ms 100 ms DC 0 10 Notes : 1. TC = 25°C 2. TJ = 150°C 0 10 1 2 10 8 6 4 2 3. Single Pulse -1 10 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [°C] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve 0 D = 0 .5 0 .2 10 Z N o te s : 1 . Z θ J C ( t) = 0 .5 8 ° C /W M a x . -1 2 . D u ty F a c to r , D = t 1 / t 2 0 .1 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 5 PDM 0 .0 2 t1 0 .0 1 θJC (t), Thermal Response 10 10 10 t2 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 4 FQA13N50CF Rev. A1 www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) FQA13N50CF 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FQA13N50CF Rev. A1 www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FQA13N50CF Rev. A1 www.fairchildsemi.com TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters 7 FQA13N50CF Rev. A1 www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Mechanical Dimensions FQA13N50CF 500V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters 8 FQA13N50CF Rev. A1 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30