®
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Features
Description
• 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 10 nC )
• Low Crss ( typical 8.5 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
D
{
●
◀
G{
TO-220
G DS
FQP Series
▲
●
●
TO-220F
GD S
FQPF Series
{
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
IDM
Drain Current
FQP3N50C
FQPF3N50C
500
Units
V
- Continuous (TC = 25°C)
3
3*
A
- Continuous (TC = 100°C)
1.8
1.8 *
A
12
12 *
A
- Pulsed
(Note 1)
± 30
V
200
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
3
A
EAR
Repetitive Avalanche Energy
(Note 1)
6.2
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
62
25
W
0.5
0.2
W/°C
-55 to +150
°C
300
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FQP3N50C
FQPF3N50C
Units
2.0
4.9
°C/W
RθJC
Thermal Resistance, Junction-to-Case
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2005 Fairchild Semiconductor Corporation
FQP3N50C/FQPF3N50C Rev. A
1
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
QFET
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP3N50C
FQP3N50C
TO-220
--
--
50
FQPF3N50C
FQPF3N50C
TO-220F
--
--
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.7
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
1
µA
VDS = 400 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
2.1
2.5
Ω
--
1.5
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.5 A
gFS
Forward Transconductance
VDS = 40 V, ID = 1.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
280
365
pF
--
50
65
pF
--
8.5
11
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 3 A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 3 A,
VGS = 10 V
(Note 4, 5)
--
10
30
ns
--
25
60
ns
--
35
80
ns
--
25
60
ns
--
10
13
nC
--
1.5
--
nC
--
5.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
3
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
12
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 3 A
--
--
1.4
V
trr
Reverse Recovery Time
--
170
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3 A,
dIF / dt = 100 A/µs
--
0.7
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQP3N50C/FQPF3N50C Rev. A
2
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
ID, Drain Current [A]
ID , Drain Current [A]
Top :
1
10
0
10
-1
0
10
25°
-55°
2. 250µs Pulse Test
-1
10
1
10
0
10
Note
1. VDS = 40V
Notes :
1. 250µs Pulse Test
2. TC = 25°C
-1
10
150°C
10
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
8.0
7.0
6.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
7.5
VGS = 10V
6.0
5.5
5.0
4.5
4.0
VGS = 20V
3.5
3.0
2.5
Note : TJ = 25°C
2.0
1.5
0
10
150°C
Notes :
1. VGS = 0V
2. 250µs Pulse Test
-1
0
2
4
6
8
10
10
0.2
ID, Drain Current [A]
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
600
Crss = Cgd
10
VGS, Gate-Source Voltage [V]
Capacitances [pF]
25°C
Ciss
400
Coss
200
Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
Note : ID = 3A
0
-1
10
0
0
10
1
10
FQP3N50C/FQPF3N50C Rev. A
0
5
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2. ID = 250µA
2.0
1.5
1.0
2. ID = 1.5 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
TJ, Junction Temperature [°C]
2
10
2
10
ID, Drain Current [A]
1
100 µs
1 ms
10 ms
100 ms
0
10
DC
Notes :
1. TC = 25°C
-1
10
50
100
150
200
Operation in This Area
is Limited by R DS(on)
1
10
100 µs
1 ms
10 ms
100 ms
0
10
DC
Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
2. TJ = 150°C
3. Single Pulse
3. Single Pulse
-2
-2
10
0
Figure 9-2. Maximum Safe Operating Area
of FQPF3N50C
Operation in This Area
is Limited by R DS(on)
10
-50
TJ, Junction Temperature [°C]
Figure 9-1. Maximum Safe Operating Area
of FQP3N50C
ID, Drain Current [A]
Notes :
1. VGS = 10 V
0.5
0
1
10
2
10
10
3
10
0
10
10
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. MaximumDrain Current
ID, Drain Current [A]
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [°C]
FQP3N50C/FQPF3N50C Rev. A
4
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. ransient Thermal Response Curve of FQP3N50C
ZθJC(t), Thermal Response
10
D=0.5
0
0.2
N otes :
1. Z θ JC (t) = 2 ° C /W M ax.
0.1
10
2. Duty Factor, D=t1 /t2
3. T JM - T C = P DM * Z θ JC (t)
0.05
-1
0.02
0.01
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1, Square W ave Pulse Duration [sec]
Figure 11-2. ransient Thermal Response Curve of FQPF3N50C
ZθJC(t), Thermal Response
D=0.5
10
0
0.2
0.1
10
-1
10
-2
0.05
Notes :
1. Z θ JC (t) = 4.9 ° C/W Max.
0.02
3. T JM - T C = P DM * Z θ JC (t)
2. Duty Factor, D=t 1/t2
0.01
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1, Square W ave Pulse Duration [sec]
FQP3N50C/FQPF3N50C Rev. A
5
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
FQP3N50C/FQPF3N50C Rev. A
VDS (t)
VDD
DUT
10V
ID (t)
tp
6
Time
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
FQP3N50C/FQPF3N50C Rev. A
7
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TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
FQP3N50C/FQPF3N50C Rev. A
8
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Mechanical Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FQP3N50C/FQPF3N50C Rev. A
9
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Mechanical Dimensions
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
10
FQP3N50C/FQPF3N50C Rev. A
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
TRADEMARKS