Ordering number : ENN7532 SCH1302 P-Channel Silicon MOSFET SCH1302 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2221 [SCH1302] Top View 1.6 0.05 0.2 0.15 6 5 4 1.5 0.05 1.6 Side View 1 2 3 0.5 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Bottom View 0.56 0.25 Side View Specifications SANYO : SCH6 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS ±10 V --2 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) V --8 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS1 IDSS2 Gate-to-Source Leakage Current IGSS1 IGSS2 Cutoff Voltage Forward Transfer Admittance VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=--20V, VGS=0 VDS=--4V, VGS=0 VGS=±8V, VDS=0 VGS=±4V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--1A Ratings min typ Unit max --20 V --0.3 1.8 Marking : JB --10 µA --1 µA ±10 µA ±1 µA --1.0 3.0 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31504 TS IM TA-100483 No.7532-1/4 SCH1302 Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1A, VGS=--4V ID=--0.5A, VGS=--2.5V Input Capacitance RDS(on)3 Ciss Ratings Conditions min typ max Unit 125 165 mΩ 155 220 mΩ 195 280 mΩ Output Capacitance Coss ID=--0.1A, VGS=--1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 9 Rise Time tr td(off) See specified Test Circuit. 27 ns See specified Test Circuit. 42 ns Turn-OFF Delay Time Fall Time 410 pF 60 pF 40 pF ns tf Qg See specified Test Circuit. 38 ns VDS=--10V, VGS=--10V, ID=--2A 10 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2A 0.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2A 1.2 Diode Forward Voltage VSD IS=--2A, VGS=0 Total Gate Charge nC --0.88 --1.2 V Switching Time Test Circuit VDD= --10V VIN 0V --4V ID= --1A RL=10Ω VIN D VOUT PW=10µs D.C.≤1% G P.G SCH1302 50Ω S ID -- VDS 5V --2.0 --1.5 C --25 °C VGS= --1.0V --2.5 75° --0.8 --3.0 --1.0 Ta= --1 . V --1 . VDS= --10V --3.5 Drain Current, ID -- A --1.2 ID -- VGS --4.0 --2.5 --10V --4.0V --1.6 --0.4 °C --0.5 25 Drain Current, ID -- A 8V --3.0V --2.0 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT05688 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Gate-to-Source Voltage, VGS -- V --1.8 --2.0 IT02754 No.7532-2/4 SCH1302 RDS(on) -- VGS 400 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 --0.5A 300 --1.0A 250 200 100 50 --2 --4 --6 --8 --10 Gate-to-Source Voltage, VGS -- V 50 --40 --20 0 20 40 60 80 100 120 140 160 IT05690 IF -- VSD VGS=0 7 5 3 3 2 --0.1 7 5 C 1.0 --1.0 7 5 --25 ° 5°C --2 = a T C 75° 2 2 75 °C °C 3 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 100 3 C 25° 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --0.01 --0.2 5 --0.6 --0.7 --0.8 --0.9 --1.0 td(on) Ciss 3 Ciss, Coss, Crss -- pF tr --1.2 f=1MHz 5 tf --1.1 IT02758 7 td(off) 10 7 5 --0.5 Ciss, Coss, Crss -- VDS 1000 3 2 3 2 --0.4 Diode Forward Voltage, VSD -- V VDD= --10V VGS= --4V 100 7 5 --0.3 IT02757 SW Time -- ID 1000 7 5 Switching Time, SW Time -- ns 150 --10 7 5 5 0.1 --0.01 2 100 7 Coss 5 Crss 3 3 2 2 1.0 --0.1 10 2 3 5 7 2 --1.0 3 Drain Current, ID -- A 5 0 --7 3 2 Drain Current, ID -- A --6 --5 --4 --1 3 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 11 IT02761 --12 --14 --16 IDP= --8A --18 --20 IT02760 <10µs 1m s 10 ID= --2A m DC 10 s 0m op s er ati on 3 2 --2 0 --10 ASO --1.0 7 5 --0.1 7 5 --3 2 --8 100µs --8 1 --6 2 --10 7 5 0 --4 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --2A --9 --2 IT02759 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 200 Ambient Temperature, Ta -- °C VDS= --10V 7 V = --1.8 , V GS A .1 0 I D= ---2.5V V S= 0.5A, G -= ID = --4.0V .0A, V GS I D= --1 IT05689 yfs -- ID 10 250 0 --60 0 0 300 25 150 ID= --0.1A 350 Ta = Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT05691 No.7532-3/4 SCH1302 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 0.8 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05679 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7532-4/4