SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP S1 1 8 D1 G1 2 7 D1 ! Extremely Lower RDS(ON) S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance D1,D2 D1,D2 ! Extended Safe Operating Area ! Improved High Temperature Reliability ▼ G1 ,G2 ▼ ! Surface Mounding Package : 8SOP ▼ ▼ S1 ,S2 N-Channel MOSFET Absolute Maximum Ratings Symbol Value Units VDSS VDGR Drain-to-Source Voltage(1) Characteristic 50 V Drain-Gate Voltage(RGS=1.0MΩ)(1) 50 V VGS V Gate-to-Source Voltage ±20 ID Continuous Drain Current TA=25℃ 2.0 A ID Continuous Drain Current TA=100℃ 1.6 A IDM Drain Current-Pulsed (2) 8.0 V Total Power Dissipation TA=25℃ 2.0 TA=70℃ 1.3 PD TJ , TSTG TL W Operating and Storage Junction Temperature Range - 55 to +150 ℃ Maximum Lead Temp. for Soldering Purposes, 1/16” from case for 5 seconds 300 Notes ; (1) TJ= 25℃ to 150℃ (2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature Rev. A Dual N-CHANNEL POWER MOSFET SSD2007A Electrical Characteristics (TA=25℃ unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IDSS IDON RDS(on) gfs td(on) tr td(off) tf Qg Min. Typ. Max. Units 600 -- -- Test Condition V VGS=0V,ID=250μA 2.0 -- 4.0 V VDS= VGS ,ID=250μA Gate-Source Leakage , Forward -- -- 1.0 μA VGS=20V Gate-Source Leakage , Reverse -- -- -1.0 μA VGS=-20V -- -- 2 -- -- 25 8.0 -- -- Gate Threshold Voltage Drain-to-Source Leakage Current On-State Drain-Source Current(2) Static Drain-Source 0.3 On-State Resistance(2) Forward Transconductance -- 2.5 0.5 -- Turn-On Delay Time -- -- 40 Rise Time -- -- 70 Turn-Off Delay Time -- -- 100 Fall Time -- -- 70 Total Gate Charge -- -- 15 Qgs Gate-Source Charge -- 1.0 -- Qgd Gate-Drain (“Miller”) Charge -- 2.0 -- μA A Ω S ns nC VDS=50V VDS=40V,TJ=55℃ VGS=10V,VDS=5V VGS=10V,ID=1.5A VGS=5.0V,ID=0.6A VDS ≥15V,ID=2.0A VDD=30V,ID=0.6A, Z0=6.0Ω, VDS=25V,VGS=10V, ID=1.3A Thermal Resistance Symbol Characteristic Typ. Max. Units RθJA Junction-to-Ambient -- 62.5 ℃/W Notes ; (1) TJ= 25℃ to 150℃ (2) Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% Source-Drain Diode Ratings and Characteristics Symbol IS Characteristic Min. Typ. Max. Units Continuous Source Current -- -- (Body Diode) -- -- -- -- Test Condition Modified MOSFET Symbol 1.8 A ○D Showing the Integral Reverse P-N Junction Rectifier │ ─ │─ │ ─┘─│ │ ○ G │ │ │ │ ◀ │ │ ─ ─ ▲ ○S VSD Diode Forward Voltage(2) -- -- 1.2 V TJ=25℃,IS=1.25A,VGS=0V trr Reverse Recovery Time -- -- 100 ns TJ=25℃,IF=2.5A,diF/dt=100A/μs Dual N-CHANNEL POWER MOSFET SSD2007A Fig 1. Output Characteristics Fig 2. Transfer Characteristics 10 10 Vgs=5V Vgs=10V 8 ID , Drain Current [A] ID , Drain Current [A] 8 6 Vgs=4V 4 2 6 150 oC 4 25 oC - 55 oC 2 Vgs=3V 0 0 2 4 6 8 0 0 10 1 2 3 4 5 6 7 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Capacitance vs. Drain-Source Voltage 1.0 Capacitance [pF] RDS(on) , [ Ω ] Drain-Source On-Resistance 320 0.8 0.6 0.4 VGS = 5 V 240 C iss 160 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C oss 80 0.2 VGS = 10 V 0.0 0 1 2 C rss 3 4 0 5 5 10 15 20 25 ID , Drain Current [A] VDS , Drain-Source Voltage [V] Fig 5. Breakdown Voltage vs. Temperature Fig 6. Nomalized On-Resistance vs. Temperature 1.2 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.4 1.1 1.0 ID = 250 µA 0.9 1.2 VGS = 10 V ID = 1.5 A 1.0 0.8 0.6 0.8 -50 0 50 100 TJ , Junction Temperature [oC] 150 -50 0 50 100 TJ , Junction Temperature [oC] 150 Dual N-CHANNEL POWER MOSFET SSD2007A Fig 7. Nomalized Effective Transient Thermal Impedance, Junction-to-Amdient Thermal Impedance 1 Duty Cycle=0.5 0.2 PDM 0.1 0.1 t1 0.05 t 2 @ Notes : 1. Rθ J A (t)=62.5 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TA =PD M *Zθ J A (t) 4. Surface Mounted 0.02 Single Pulse 0.01 - 5 10 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration Fig 8. Source-Drain Diode Forward Voltage Fig 9. Gate Charge vs. Gate-Source Voltage 10 VGS , Gate-Source Voltage [V] IDR , Reverse Drain Current [A] 102 101 100 0.0 TJ=150 oC 0.4 TJ=25 oC 0.8 1.2 1.6 2.0 2.4 Fig 10. Threshold Voltage VGS(th) , (Normalized) 2.0 1.5 ID = 250 µA 1.0 0.5 0 50 100 TJ , Junction Temperature [oC] VDD = 25 V ID = 1.3A 5 0 0 2 4 6 QG , Total Gate Charge [nC] VSD , Source-Drain Voltage [V] 0.0 -50 100 [sec] 150 8 10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5