FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET General Description Features Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). • –4.6 A, –20 V RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 60 mΩ @ VGS = –2.5 V RDS(ON) = 160 mΩ @ VGS = –1.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.85 mm height when mounted to PCB Applications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery management • Load switch • Ultra-low Qg x RDS(ON) figure-of-merit • Battery protection • High power and current handling capability. S GATE G D Bottom Top Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS ID Gate-Source Voltage ±8 V A Drain Current – Continuous (Note 1a) – Pulsed –10 Power Dissipation for Single Operation PD TJ, TSTG –4.6 (Note 1a) Operating and Storage Junction Temperature Range 1.7 W –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 RθJC Thermal Resistance, Junction-to-Case (Note 1a) 2 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity D FDZ291P 13” 8mm 10000 units 2006 Fairchild Semiconductor Corporation FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET February 2006 Symbol A = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = –250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage. VGS = ±8 V, VDS = 0 V ±100 nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) V –20 –12 mV/°C (Note 2) VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance –0.4 –0.7 2 –1.0 31 43 85 42 40 60 160 55 V mV/°C ID(on) On–State Drain Current VGS = –4.5 V, ID = –4.6 A VGS = –2.5 V, ID = –3.6 A VGS = –1.5 V, ID = –1.0 A VGS = –4.5 V, ID = –4.6 A, TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –4.6 A 16 S VDS = –10 V, f = 1.0 MHz V GS = 0 V, 1010 pF mΩ –10 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time 160 pF 80 pF (Note 2) VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 11 19 ns 9 18 ns ns td(off) Turn–Off Delay Time 36 58 tf Turn–Off Fall Time 16 29 ns Qg Total Gate Charge 9 13 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10V, VGS = –4.5 V ID = –4.6 A, 1.6 nC 1.9 nC Drain–Source Diode Characteristics and Maximum Ratings IS trr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0V, IS = –1.4 A (Note 2) Voltage Diode Reverse Recovery Time IF = –4.6 A, dIF/dt = 100A/µs Qrr Diode Reverse Recovery Charge VSD –1.4 –0.7 –1.2 A V 17 ns 5 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' s board design. a) 2. 72°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157°C/W when mounted on a minimum pad of 2 oz copper Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Electrical Characteristics T 3 VGS = -4.5V -3.5V -ID, DRAIN CURRENT (A) 8 -2.5V -3.0V 6 -1.5V 4 2 0 0 0.25 0.5 0.75 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1.25 2.2 1.8 -2.0V -2.5V 1.4 -3.0V -3.5V -4.5V 1 0 2 4 6 -ID, DRAIN CURRENT (A) 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 0.14 ID = -2.3 A ID = -4.6A VGS = -4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 0.6 1.5 Figure 1. On-Region Characteristics. 1.3 1.2 1.1 1 0.9 0.8 0.7 0.12 0.1 0.08 TA = 125oC 0.06 TA = 25oC 0.04 0.02 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 0 150 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 10 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) VGS = -1.5V -2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 8 6 4 TA = 125oC -55oC 2 25oC 0 10 1 0.1 TA = 125oC 0.01 25oC 0.001 -55oC 0.0001 0.5 0.75 1 1.25 1.5 1.75 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 1500 1200 4 VDS = -5V -15V 3 -10V 2 Ciss 900 600 Coss 1 300 0 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 Crss 0 12 Figure 7. Gate Charge Characteristics. 5 10 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 8. Capacitance Characteristics. 20 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V ID = -4.6A CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 100µs 10 1ms 10ms 1 10s DC 1s 100ms VGS = -4.5V SINGLE PULSE RθJA = 157oC/W 0.1 TA = 25oC 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 157°C/W TA = 25°C 15 10 5 0 0.01 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area. 0.1 1 10 t1, TIME (sec) 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 157 °C/W 0.2 0.1 0.1 0.05 0.02 P(pk) 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Dimensional Pad and Layout FDZ291P Rev. C2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18