PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 1 Mark: 2Q TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value -50 VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -3.0 V IC Collector current -100 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C - Continuous Units V * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Off Characteristics Collector-Emitter Breakdown Voltage * V(BR)CEO Test Condition Min. Max. Units IC = -1.0mA, IB = 0 -50 V V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V ICEO Collector Cutoff Current VCB = -10V, IE = 0 VCB = -35V, IE = 0 -10 -50 nA nA ICBO Emitter Cutoff Current VEB = -3.0V, IC = 0 -50 nA On Characteristics hFE DC Current Gain IC = -100µA, VCE = -5.0V IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V 5086 5087 5086 5087 5086 5087 150 250 150 250 150 250 500 800 VCE(sat) Collector-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA -0.3 V VBE(on) Base-Emitter On Voltage IC = -1.0mA, VCE = -5.0V -0.85 V Small Signal Characteristics fT Current Gain Bandwidth Product IC = -500µA, VCE = -5.0V, f = 20MHz Ccb Collector-Base Capacitance VCB = -5.0V, IE = 0, f = 100KHz 40 MHz hfe Small-Signal Current Gain IC = -1.0mA, VCE = -5.0V, f = 1.0KHz 5086 5087 NF Noise Figure IC = -100µA, VCE = -5.0V RS = 3.0kΩ, f = 1.0KHz 5086 5087 3.0 2.0 dB dB IC = -20µA, VCE = -5.0V RS = 10kΩ f = 10Hz to 15.7KHz 5086 5087 3.0 2.0 dB dB 4.0 150 250 pF 600 900 * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 Max. Symbol Parameter 2N5086 2N5087 625 5.0 PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 *MMBT5087 350 2.8 Units mW mW/°C °C/W 357 °C/W * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06." ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Thermal Characteristics Ta=25°C unless otherwise noted 2N5086/2N5087/MMBT5087 VCESAT - COLLECTOR EMITTER VOLTAGE (V) h F E- TYPICAL PULSED CURRENT GAIN Typical Characteristics 350 V CB = 5V 300 125 °C 250 200 25 °C 150 - 40 °C 100 50 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 1 0.8 25 °C β β = 10 0.25 0.2 0.15 25 °C 0.1 125 °C 0.05 - 40 °C 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 1 - 40 °C 0.6 125 °C 0.4 25 °C 125 °C 0.4 β 0.2 β β 0 0.1 β = 10 β β 1 10 I C - COLLECTOR CURRENT (mA) 50 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 25 Figure 4. Base-Emitter On Voltage vs Collector Current 20 100 f = 1 MHz CAPACITANCE (pF) V CB = 40V 10 1 0.1 0.01 25 V CE = 5V 0.2 Figure 3. Base-Emitter Saturation Voltage vs Collector Current I CBO - COLLECTOR CURRENT (nA) β β 0.8 - 40 °C 0.6 0.3 β Figure 2. Collector-Emitter Saturation Voltage vs Collector Current V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTE R VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current β 50 75 100 TA - AMBIENT TEMP ERATURE (° C) Figure 5. Collector Cutoff Current vs Ambient Temperature ©2003 Fairchild Semiconductor Corporation 125 16 12 8 C ibo 4 0 C obo 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 Figure 6. Input and Output Capacitance vs Reverse Voltag Rev. B1, September 2003 V CE = 5V NF - NOISE FIGURE (dB) V CE = 5V 300 250 200 150 100 4 µ µµ Rµ µ= 5.0 kΩΩΩ I C = - 250 µA, S µ µµ Rµ Sµ= 1.0 kΩΩΩ I C = - 500 µA, 3 2 1 0 0.1 f 1 10 I C - COLLECTOR CURRENT (mA) 0 100 100 1000 Figure 7. Gain Bandwidth Product vs Collector Current 10000 f - FREQUENCY (Hz) 1000000 Figure 8. Noise Figure vs Frequency 8 P D - POWER DISSIPATION (mW) 625 V CE = 5V NF - NOISE FIGURE (dB) Ω ΩΩ Ω ΩΩ Ω µµ Rµµ Sµ= 10 kΩΩΩ Ω I C = - 20 µA, Ω 50 T - GAIN BANDWIDTH PRODUCT (MHz) 5 350 BANDWIDTH = 15.7 kHz 6 µ I C = 10 µµ µA µ µ 4 µ I C = 100 µµ µA µ 2 µ 0 1,000 2,000 5,000 10,000 20,000 Ω 50,000 TO-92 500 250 125 0 100,000 SOT-23 375 0 25 R S - SOURCE RESISTANCE ΩΩ ( ΩΩ) 50 75 100 TEMPERATURE ( o C) 125 150 Ω µ √µ √ - EQUIVALENT INPUT NOISE VOLTAGE ( µV/ √Hz) µµ √√ µ √ Figure 10. Power Dissipation vs Ambient Temperature 0.1 10 V CE = - 5.0V 5 2 0.05 ,f= 1 00 Hz ,f= 1 0.5 V CE = - 5.0V 0.02 z kH 1.0 z i n kH 10 ,f= i n in 0.01 e n , f = 100 Hz 0.005 e n , f = 1.0 kHz 0.1 0.001 0.01 0.1 I C - COLLECTOR CURRENT (mA) Figure 11. Equivalent Input Noise Current vs Collector Current ©2003 Fairchild Semiconductor Corporation 1 2 n 0.002 0.2 √e √i 2 √√ √ √√ √ n - EQUIVALENT INPUT NOISE CURRENT (pA/ Hz) Figure 9. Wideband Noise Frequency vs Source Resistance 0.001 0.001 e n , f = 10 kHz 0.01 0.1 I C - COLLECTOR CURRENT (mA) 1 Figure 12. Equivalent Input Noise Voltage vs Collector Current Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Typical Characteristics(Continuce) 1,000,000 R S - SOURCE RESISTANCE Ω (Ω ) 1,000,000 100,000 1.0 dB 4.0 dB 6.0 dB 10 dB 10,000 1,000 V CE = - 5V f = 10 kHz BANDWIDTH = 1.5 kHz 100,000 10,000 100 0.01 0.1 I C - COLLECTOR CURRENT (mA) 0.001 1 Ω Ω Ω R S - SOURCE RESISTANCE ( Ω ) 6.0 dB dB 10 1,000 dB dB 5,000 dB 10,000 0 4. 4.0 10,000 0 2. dB 4.0 dB 100,000 V CE = - 5V f = 1.0 kHz BANDWIDTH = 150 Hz 2,000 1,000 dB dB 1 0 6. 10 6.0 0.01 0.1 I C - COLLECTOR CURRENT (mA) Figure 14. Contours of Constanct Narrow Band Noise Figure R S - SOURCE RESISTANCE ( ΩΩ) Figure 13. Contours of Constanct Narrow Band Noise Figure 1,000,000 V CE = - 5V f = 100 Hz BANDWIDTH = 15 Hz 5.0 dB 8.0 dB 12 dB 1,000 100 0.001 12 dB 8.0 dB 5.0 dB 3.0 dB Ω Ω 10 dB 6.0 dB 4.0 dB 2.0 dB ΩΩ Ω) R S - SOURCE RESISTANCE ( Ω (Continuce) 4. 0 6.0 dB dB 500 V CE = - 5V f = 10 MHz 200 BANDWIDTH = - 2 kHz 100 100 0.001 0.01 0.1 I C - COLLECTOR CURRENT (mA) Figure 15. BContours of Constant Narrow Band Noise Figure ©2003 Fairchild Semiconductor Corporation 1 0.01 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Figure 16. Contours of Constant Narrow Band Noisd Figure Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Typical Characteristics 1.4 h fe and h ie 1.2 1 h oe 0.8 f = 1.0 kHz 0.6 I C = 1.0 mA TA = -25°C 0.4 0 -5 -10 -15 -20 V CE- COLLECTOR-EMITTE R VOLTAGE (V) -25 CHARACTERIS TICS REL. TO VALUE, TA= 25°C Typical Common Emitter Characteristics 2 1.8 VCE = -5.0V I C = 1.0 mA f = 1.0 kHz HARACTERISTICS REL. TO VALUE , I C =1.0mA HARACTERIS TICS REL. TO VALUE, VCE=-5.0V 1.6 (f = 1.0KHz) 100 h oe 10 h fe 1 0.1 f = 1.0 kHz VCE = -5.0V TA = -25°C 0.01 0.1 h ie 0.2 0.5 1 2 5 I C - COLLECTOR CURRE NT (mA) 10 Typical Common Emitter Characteristics h ie 1.6 1.4 h fe 1.2 1 h fe and h oe h oe 0.8 h ie 0.6 0.4 -60 -40 -20 0 20 40 60 80 T A - AMBIE NT TEMP ERATURE ( ° C) 100 Typical Common Emitter Characteristics ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Typical Common Emitter Characteristics 2N5086/2N5087/MMBT5087 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Package Dimensions (Continued) ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I5