BC183LC BC183LC NPN General purpose Amplifier. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 45 Units V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 100 mA PC Collector Dissipation (Ta=25°C) 350 mW TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Voltage BVCEO Collector-Emitter Voltage IC = 2mA 30 V BVEBO Emitter-Base Voltage IE = 10µA 5 V ICBO Collector Cut-off Current VCB = 30V 15 nA IEBO Emitter Cut-off Current VEB = 3V 15 nA hFE DC Current Gain VCE = 5V, IC = 10µA VCE = 5V, IC = 2mA VCE = 5V, IC = 100mA VCE(sat) Collector-Emitter Saturation Voltage Test Condition IC = 10µA Min. 45 40 100 80 Max. VBE(sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA Base-Emitter On Voltage VCE = 5V, IC = 2mA COB Output Capacitance VCE = 10V, f = 1MHz fT Current gain Bandwidth Product VCE = 5V, IC = 10mA 150 hfe Small Signal Current Gain VCE = 5V, IC = 2mA f = 1KHz 450 NF Noise Figure VCE = 5V, IC = 200mA RG = 2KΩ, f = 1KHz 0.55 Units V 850 0.25 0.6 IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VBE(on) ©2002 Fairchild Semiconductor Corporation Typ. V 1.2 V 0.7 V 5 pF MHz 900 10 dB Rev. A1, August 2002 BC183LC 1200 VCE = 5.0V 125 °C 1000 800 600 25 °C 400 - 40 °C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 1 - 40 °C 0.8 0.6 25 °C β 125°°C 0.4 β 0.2 0.1 β = 10 β β 1 10 I C - COLLECTOR CURRENT (mA) 0.25 125 °C 0.15 25 °C 0.1 - 40 °C 0.05 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 - 40 °C 0.8 25 °C 0.6 125°°C 0.4 V CE = 5.0 V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 40 Figure 4. Base-Emitter ON Voltage vs Collector Current 10 5 f = 1.0 MHz CAPACITANCE (pF) VCB = 45V 1 0.1 25 100 1 Figure 3. Base-Emitter Saturation Voltage vs Collector Curent I CBO - COLLE CTOR CURRENT (nA) β = 10 0.2 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current 0.3 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( ° C) Figure 5. Collector-Cutoff Current vs Ambient Temperature ©2002 Fairchild Semiconductor Corporation 150 4 3 C 2 C ob 1 0 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 Figure 6. Input and Output Capacitance vs Reverse Bias Voltage Rev. A1, August 2002 175 MHz 7 5 150 MHz 3 2 125 MHz 100 MHz 75 MHz 1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 1000 100 10 1 25 50 75 100 125 T A - AMBIE NT TEMPERATURE ( °C) Figure 8. Normalized Collector-Cutoff Current vs Ambient Temperaure Figure 7. Contours of Constant Gain Bandwidth Product (fT) 10 5 I C = 200 µA, R S = 10 kΩµ NF - NOISE FIGURE (dB) V CE = 5.0 V NF - NOISE FIGURE (dB) 150 BANDWIDTH = 15.7 kHz µ 4 I C = 100 µA 3 µ 2 µ I = 30 µA µ µ I C = 10 µA 1 Ω 0 1,000 2,000 5,000 10,000 20,000 50,000 R S - SOURCE RESISTANCE (Ω ) 8 I C = 100 µA, R S = 10 kΩµ 6 I C = 1.0 mA, Ω R S = 500 Ω 4 I C = 1.0 mA,Ω R S = 5.0 kΩ 2 Ω 0 0.0001 100,000 µ R S - SOURCE RESISTANCE ( Ω ) 625 TO-92 500 SOT-23 250 125 0 25 50 75 100 TEMPERATURE (o C) 125 0.01 0.1 1 f - FREQUENCY (MHz) 10 100 10,000 3.0 dB 5,000 4.0 dB 2,000 6.0DB 1,000 8.0 dB 500 V CE = 5.0 V 10 dB f = 100 Hz BANDWIDTH = 20 Hz 200 150 12 dB 14 dB 100 0 0.001 V CE = 5.0V Figure 10. Noise Figure vs Frequency Figure 9. Wideband Noise Frequency vs Source Resistance Ω 375 Ω Ω V - COLLECTOR VOLTAGE (V) ° CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C (Continued) 10 P D - POWER DISSIPATION (mW) 1 10 100 I C - COLLECTOR CURRENT ( µ A) 1,000 Figure 12. Contours of Constant Narrow Band Noise Figure Figure 11. Collector-Cutoff Current vs Ambient Temperature ©2002 Fairchild Semiconductor Corporation Ω Ω µΩ Ω BC183LC µ Ω µ µ Ω Ω Typical Characteristics Rev. A1, August 2002 µ BC183LC (Continued) 5,000 2.0DB 2,000 3.0 dB 1,000 4.0 dB 500 V CE = 5.0 V f = 1.0 kHz BANDWIDTH 200 = 200 Hz 6.0 dB 8.0 dB µ 10000 Ω 10,000 R S - SOURCE RESISTANCE (Ω ) µ R S - SOURCE RESISTANCE ( Ω ) Ω Typical Characteristics 5000 2000 10 100 I C- COLLECTOR CURRENT ( µ A) 4.0 dB 1,000 3.0 dB 5.0 dB 6.0 dB 10 CHARACTE RI STICS RE LATIV E TO VALUE (TA =25°C) 1.5 1.3 1.2 h ie V = 5.0V f = 1.0kHz I = 1.0mA h re h fe h oe 1.1 1 0.9 0.8 h oe 0.7 h fe 0.6 h re 0.5 -100 h ie -50 0 50 100 T J - JUNCTIO N TEMP ERATURE ( C) 150 Figure 17. Typical Common Eimtter Characteristics ©2002 Fairchild Semiconductor Corporation 8.0 dB 10 100 I C - COLLECTOR CURRENT ( A) 1000 1.5 1.4 1.3 1.2 h ie V = 5.0V f = 1.0kHz I = 1.0mA h re h fe h oe 1.1 1 0.9 h oe 0.8 0.7 h fe 0.6 h re 0.5 -100 h ie -50 0 50 100 T J - JUNCTIO N TEMP ERATURE ( C) 150 Figure 16. Typical Common Emitter Characteristics Figure 15. Contours of Constant Narrow Band Noise Figure µ 1.4 CHARACTE RI STICS RE LATIV E TO VALUE (TA =25°C) 2.0 dB CHARACTERISTICS RELATIVE TO VALUE(I C =1mA) Ω R S - SOURCE RESISTANCE (Ω ) 5000 4.0 dB 500 VCE = 5.0V f = 1.0 MHz 200 BANDWIDTH 7.0 dB = 200kHz 8.0 dB 100 0.01 0.1 1 I C - COLLECTOR CURRENT ( µ A) 1 6.0 dB Figure 14. Contours of Constant Narrow Band Noise Figure 10000 1000 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz 200 Figure 13. Contours of Constant Narrow Band Noise Figure 2000 3.0 dB 500 100 1 2.0 dB 1000 100 µ 1.0 dB 100 f = 1.0kHz h oe 10 h ie and h 1 h re h oe h fe h ie 0.1 0.01 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 Figure 18. Typical Common Emitter Characteristics Rev. A1, August 2002 BC183LC Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1