STMICROELECTRONICS 2N3440

2N3439
2N3440
SILICON NPN TRANSISTORS
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SGS-THOMSON PREFERRED SALESTYPES
NPN TRANSISTOR
DESCRIPTION
The 2N3439, 2N3440 are silicon epitaxial planar
NPN transistors in jedec TO-39 metal case
designed for use in consumer and industrial
line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
2N3439
2N3440
300
V
250
V
V CBO
Collector-Base Voltage (I E = 0)
450
V CEO
Collector-Emitter Voltage (I B = 0)
350
V EBO
Emitter-Base Voltage (I C = 0)
7
V
IC
Collector Current
1
A
IB
Base Current
0.5
A
P tot
Total Dissipation at T c ≤ 25 o C
10
W
P tot
Total Dissipation at T amb ≤ 50 o C
T stg
Tj
June 1997
Storage Temperature
Max. Operating Junction Temperature
1
W
-65 to 200
o
C
200
o
C
1/4
2N3439 / 2N3440
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
17.5
175
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Max.
Unit
I CBO
Collector Cut-off
Current (I E = 0)
Parameter
for 2N3439
for 2N3440
V CB = 360 V
V CB = 250 V
20
20
µA
µA
I CEO
Collector Cut-off
Current (I B = 0)
for 2N3439
for 2N3440
V CE = 300 V
V CE = 200 V
20
50
µA
µA
I CEX
Collector Cut-off
Current (V BE = -1.5V)
for 2N3439
for 2N3440
V CE = 450 V
V CE = 300 V
500
500
µA
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 6 V
20
µA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
Test Conditions
I C = 50 mA
for 2N3439
for 2N3440
Min.
Typ.
350
250
V
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 50 mA
IB = 4 mA
0.5
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 50 mA
I B = 4 mA
1.3
V
h FE ∗
DC Current Gain
I C = 20 mA
I C = 2 mA
h FE
Small Signal Current
Gain
I C = 5 mA
V CE = 10 V
f = 1KHz
25
fT
Transition frequency
I C = 5 mA
V CE = 10 V
f = 5MHz
15
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
V CE = 10 V
V CE = 10 V for 2N3439
40
30
160
MHz
2N3439 / 2N3440
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
G
A
I
E
F
H
B
L
P008B
3/4
2N3439 / 2N3440
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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