2N3439 2N3440 SILICON NPN TRANSISTORS ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439, 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440 300 V 250 V V CBO Collector-Base Voltage (I E = 0) 450 V CEO Collector-Emitter Voltage (I B = 0) 350 V EBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 1 A IB Base Current 0.5 A P tot Total Dissipation at T c ≤ 25 o C 10 W P tot Total Dissipation at T amb ≤ 50 o C T stg Tj June 1997 Storage Temperature Max. Operating Junction Temperature 1 W -65 to 200 o C 200 o C 1/4 2N3439 / 2N3440 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 17.5 175 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CBO Collector Cut-off Current (I E = 0) Parameter for 2N3439 for 2N3440 V CB = 360 V V CB = 250 V 20 20 µA µA I CEO Collector Cut-off Current (I B = 0) for 2N3439 for 2N3440 V CE = 300 V V CE = 200 V 20 50 µA µA I CEX Collector Cut-off Current (V BE = -1.5V) for 2N3439 for 2N3440 V CE = 450 V V CE = 300 V 500 500 µA µA I EBO Emitter Cut-off Current (I C = 0) V EB = 6 V 20 µA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage Test Conditions I C = 50 mA for 2N3439 for 2N3440 Min. Typ. 350 250 V V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 50 mA IB = 4 mA 0.5 V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 50 mA I B = 4 mA 1.3 V h FE ∗ DC Current Gain I C = 20 mA I C = 2 mA h FE Small Signal Current Gain I C = 5 mA V CE = 10 V f = 1KHz 25 fT Transition frequency I C = 5 mA V CE = 10 V f = 5MHz 15 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 V CE = 10 V V CE = 10 V for 2N3439 40 30 160 MHz 2N3439 / 2N3440 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 2N3439 / 2N3440 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4