MJE3440 SILICON NPN TRANSISTOR ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V V CBO Collector-Base Voltage (IE = 0) 350 V CEO Collector-Emitter Voltage (I B = 0) 250 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 0.3 A Base Current 0.15 A IC IB P t ot T stg Tj June 1997 Total Power Dissipation at Tcase ≤ 25 C o St orage Temperature Max. Operating Junction Temperature 15 W -65 to +150 o C 150 o C 1/5 MJE3440 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case o 8.33 Max C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it µA I CBO Collector Cut-off Current (IE = 0) V CB = 250 V 20 I CEV Collector Cut-off Current (V BE = -1.5V) V CE = 300 V 500 µA I CEO Collector Cut-off Current (IB = 0) V CE = 200 V 50 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 20 µA V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 50 mA IB = 4 mA 0.5 V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 50 mA IB = 4 mA 0.3 V V BE ∗ Base-Emitter Voltage I C = 50 mA V CE = 10 V 0.8 V h FE∗ DC Current G ain I C = 2 mA I C = 20 mA V CE = 10 V V CE = 10 V hf e Small Signal Current Gain I C = 5 mA f = 1 KHz V CE = 10 V fT Transistor Frequency I C = 10 mA f = 5 MHz V CE = 10 V Collector-Base Capacitance V CB = 10 V f = 1 MHz C CBO ∗ IE = 0 ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5 % Safe Operating Area 2/5 Derating Curve 30 50 200 25 15 MHz 10 pF MJE3440 DC Current Gain Collector-emitter Saturation Voltage Base-emitter Voltage Transition Frequency 3/5 MJE3440 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 4/5 MJE3440 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5