STMICROELECTRONICS MJE3440

MJE3440
SILICON NPN TRANSISTOR
■
■
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
DESCRIPTION
The MJE3440 is a NPN silicon epitaxial planar
transistors in SOT-32 plastic package. It is
designed for use in consumer and industrial
line-operated applications.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
V CBO
Collector-Base Voltage (IE = 0)
350
V CEO
Collector-Emitter Voltage (I B = 0)
250
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
Collector Current
0.3
A
Base Current
0.15
A
IC
IB
P t ot
T stg
Tj
June 1997
Total Power Dissipation at Tcase ≤ 25 C
o
St orage Temperature
Max. Operating Junction Temperature
15
W
-65 to +150
o
C
150
o
C
1/5
MJE3440
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
o
8.33
Max
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
µA
I CBO
Collector Cut-off
Current (IE = 0)
V CB = 250 V
20
I CEV
Collector Cut-off
Current (V BE = -1.5V)
V CE = 300 V
500
µA
I CEO
Collector Cut-off
Current (IB = 0)
V CE = 200 V
50
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
20
µA
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 50 mA
IB = 4 mA
0.5
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 50 mA
IB = 4 mA
0.3
V
V BE ∗
Base-Emitter Voltage
I C = 50 mA
V CE = 10 V
0.8
V
h FE∗
DC Current G ain
I C = 2 mA
I C = 20 mA
V CE = 10 V
V CE = 10 V
hf e
Small Signal Current
Gain
I C = 5 mA
f = 1 KHz
V CE = 10 V
fT
Transistor Frequency
I C = 10 mA
f = 5 MHz
V CE = 10 V
Collector-Base
Capacitance
V CB = 10 V
f = 1 MHz
C CBO ∗
IE = 0
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5 %
Safe Operating Area
2/5
Derating Curve
30
50
200
25
15
MHz
10
pF
MJE3440
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Voltage
Transition Frequency
3/5
MJE3440
SOT-32 (TO-126) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
e3
2.2
4.15
F
G
4.65
0.163
3.8
3
0.183
0.150
3.2
H
H2
0.087
0.118
0.126
2.54
0.100
2.15
0.084
H2
0016114
4/5
MJE3440
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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