STMICROELECTRONICS BD234

BD234
SILICON PNP TRANSISTOR
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■
SGS-THOMSON PREFERRED SALESTYPE
PNP TRANSISTOR
DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power
transistor in Jedec SOT-32 plastic package
inteded for use in medium power linear and
switching applications.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V CBO
Collector-Base Voltage (I E = 0)
-45
V CER
Collector-Emitter Voltage (R BE = 1KΩ)
-45
V
V CEO
Collector-Emitter Voltage (I B = 0)
-45
V
V EBO
Emitter-Base Voltage (I C = 0)
-5
V
Collector Current
-2
A
I CM
Collector Peak Current
-6
A
P tot
Total Dissipation at T c ≤ 25 o C
T stg
Storage Temperature
IC
Tj
May 1997
Max. Operating Junction Temperature
25
W
-65 to 150
o
C
150
o
C
1/4
BD234
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
5
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CBO
I EBO
Parameter
Collector Cut-off
Current (I E = 0)
V CB = -45 V
V CB = -45 V
Emitter Cut-off Current
(I C = 0)
V EB = -5 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
V CE(sat) ∗
Test Conditions
Typ.
o
T c = 150 C
I C = -100 mA
Max.
Unit
-0.1
-2
mA
mA
-1
mA
-45
V
Collector-Emitter
Saturation Voltage
I C = -1 A
I B = -0.1 A
-0.6
V
V BE ∗
Base-Emitter Voltage
I C = -1 A
V CE = -2 V
-1.3
V
h FE ∗
DC Current Gain
I C = -150 mA
I C = -1 A
V CE = -2 V
V CE = -2 V
40
25
Transition frequency
I C = -250 mA
V CE = -10 V
3
I C = -150 mA
V CE = -2 V
fT
h FE1 /h FE2 ∗ Matched Pairs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
Min.
MHz
1.6
BD234
SOT-32 (TO-126) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
e3
2.2
4.15
F
G
4.65
0.163
3.8
3
0.183
0.150
3.2
H
H2
0.087
0.118
0.126
2.54
0.100
2.15
0.084
H2
0016114
3/4
BD234
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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