STMICROELECTRONICS BUR52

BUR52
HIGH CURRENT NPN SILICON TRANSISTOR
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■
■
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
MAINTAINS GOOD SWITCHING
PERFORMANCE EVEN WITHOUT
NEGATIVE BASE DRIVE
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
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DESCRIPTION
The BUR52 is a silicon multiepitaxial planar NPN
transistors in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
1
2
TO-3
(version " P ")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
350
V
V CEO
Collector-Emitter Voltage (I B = 0)
250
V
V EBO
Emitter-Base Voltage (I C = 0)
10
V
Collector Current
60
A
Collector Peak Current (t p = 10 ms)
80
A
IC
I CM
IB
Base Current
P tot
Total Dissipation at T c ≤ 25 o C
T stg
Storage Temperature
Tj
June 1997
Max. Operating Junction Temperature
16
A
350
W
-65 to 200
o
C
200
o
C
1/4
BUR52
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
0.5
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 350 V
V CB = 350 V
I CEO
Collector Cut-off
Current (I B = 0)
V CE =250 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 7 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
V EBO
Typ.
T case = 125 o C
I C = 200 mA
Max.
Unit
0.2
2
mA
mA
1
mA
0.2
µA
250
V
10
V
Emitter-base Voltage
(I C = 0)
I E = 10 mA
Collector-emitter
Saturation Voltage
I C = 25 A
I C = 40 A
IB = 2 A
IB = 4 A
0.7
1
1.5
V
V
Base-emitter
Saturation Voltage
I C = 25 A
I C = 40 A
IB = 2 A
IB = 4 A
1.5
1.8
2
V
V
DC Current Gain
IC = 5 A
I C = 40 A
V CE = 4 V
V CE = 4 V
Second Breakdown
Collector Current
V CE = 20 V
t=1s
fT
Transition-Frequency
IC = 1 A
f = 1 MHz
V CE = 5 V
10
16
MHz
t on
Turn-on Time
IC = 40 A
V CC = 100 V
I B1 = 4 A
0.3
1
µs
ts
Storage Time
I B1 = 4 A
V CC = 100 V
2
µs
Fall Time
IC = 40 A
I B2 = -4 A
1.2
tf
0.2
0.6
µs
V CE(sat) ∗
V BE(sat) ∗
h FE ∗
I s/b
Clamped E s/b Collector
Current
V clamp = 250 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
Min.
L = 500 µH
20
15
100
17.5
40
A
A
BUR52
TO-3 (version P) MECHANICAL DATA
mm
DIM.
inch
MIN.
TYP.
MAX.
MIN.
A
11.00
11.7
13.10
0.433
0.516
B
1.45
1.5
1.60
0.057
0.063
C
2.7
2.92
0.106
0.115
D
8.9
9.4
0.350
0.370
E
19.00
20.00
0.748
0.787
G
10.70
10.9
11.10
0.421
0.429
0.437
N
16.50
16.9
17.20
0.650
0.665
0.677
P
25.00
26.00
0.984
1.024
R
3.88
4.2
0.153
0.165
U
38.50
39.30
1.516
1.547
V
30.00
30.30
1.181
30.14
MAX.
1.186
A
P
1.193
D
C
O
N
B
V
E
G
U
TYP.
R
P003I
3/4
BUR52
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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