STMICROELECTRONICS BU406

BU406
SILICON NPN SWITCHING TRANSISTOR
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SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
VERY HIGH SWITCHING SPEED
APPLICATIONS:
HORIZONTAL DEFLECTION FOR
MONOCHROME TV
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DESCRIPTION
The BU406 is a silicon epitaxial planar NPN
transistor in Jedec TO-220 plastic package.
It is a fast switching device for use in horizontal
deflection output stages of large screens MTV
receivers with 110o CRT.
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CBO
V CEV
V CEO
V EBO
IC
I CM
I CM
IB
P tot
T stg
Tj
June 1997
Parameter
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (V BE = -1.5 V)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (repetitive)
Collector Peak Current (t p = 10 ms)
Base Current
Total Dissipation at T c ≤ 25 o C
Storage Temperature
Max. Operating Junction Temperature
Value
400
400
200
6
7
10
15
4
60
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
o
C
o
C
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BU406
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
2.08
o
C/W
70
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CES
Parameter
Test Conditions
Min.
Max.
Unit
5
100
1
mA
µA
mA
1
mA
IB = 0.5 A
1
V
I B = 0.5 A
1.2
V
Collector Cut-off
Current (V BE = 0)
V CE =400 V
V CE =250 V
V CE =250 V
Emitter Cut-off Current
(I C = 0)
V EB = 6 V
V CE(sat) ∗
Collector-emitter
Saturation Voltage
IC = 5 A
V BE(sat) ∗
Base-emitter
Saturation Voltage
IC = 5 A
Transition-Frequency
I C = 0.5 A
V CE = 10V
Turn-off Time
IC = 5 A
I Bend = 0.5 A
Second Breakdown
Collector Current
V CE = 40 V
I EBO
fT
t off ∗∗
I s/b
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
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Typ.
o
T case = 150 C
t = 10 ms
10
MHz
0.75
4
µs
A
BU406
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
1.27
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
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BU406
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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