2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR ■ SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771 2N3772 60 V V V CEO Collector-Emitter Voltage (I E = 0) 40 V CEV Collector-Emitter Voltage (V BE = -1.5V) 50 80 V CBO Collector-Base Voltage (I B = 0) 50 100 V V EBO Emitter-Base Voltage (I C = 0) 5 7 V Collector Current 30 20 A Collector Peak Current 30 30 A Base Current 7.5 5 A 15 IC I CM IB I BM Base Peak Current P tot Total Dissipation at T c ≤ 25 o C T stg Storage Temperature Tj June 1997 Max. Operating Junction Temperature 15 150 A W -65 to 200 o C 200 o C 1/4 2N3771/2N3772 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 V CB = 50 V for 2N3772 V CB = 100 V for all V CB = 30 V T j = 150 o C 2 5 10 mA mA mA I CEO Collector Cut-off Current (I B = 0) for 2N3771 for 2N3772 V CB = 30 V V CB = 50 V 10 10 mA mA I CBO Collector Cut-off Current (I E = 0) for 2N3771 for 2N3772 V CB = 50 V V CB = 100 V 4 5 mA mA I EBO Emitter Cut-off Current (I C = 0) for 2N3771 for 2N3772 V CB = 5 V V CB = 7 V 5 5 mA mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 0.2 A for 2N3771 for 2N3772 V CEV(sus) ∗ Collector-Emitter Sustaining Voltage (V EB = -1.5V) I C = 0.2 A for 2N3771 for 2N3772 V CER(sus) ∗ Collector-Emitter Sustaining Voltage (R BE = 100 Ω) I C = 0.2 A for 2N3771 for 2N3772 V CE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain for 2N3771 I C = 15 A I C = 30 A for 2N3772 I C = 10 A I C = 20 A for 2N3771 I C = 15 A for 2N3772 I C = 10 A for 2N3771 I C = 15 A I C = 30 A for 2N3772 I C = 10 A I C = 20 A 40 60 V V 50 80 V V 45 70 V V R BE = 100 Ω 2 4 V V IB = 1 A IB = 4 A 1.4 4 V V VCE = 4 V 2.7 V VCE = 4 A 2.7 V IB = 1.5 A IB = 6 A VCE = 4 V VCE = 4 V 15 5 60 VCE = 4 V VCE = 4 V 15 5 60 h FE Small Signal Current Gain IC = 1 A VCE = 4 V f = 1 KHz 40 fT Transition frequency IC = 1 A VCE = 4 V f = 50 KHz 0.2 MHz I s/b Second Breakdown Collector Current V CE = 25 V t = 1 s (non repetitive) 6 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 Min. 2N3771/2N3772 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 2N3771/2N3772 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4