BU808DFH ® HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING CREEPAGE PATH > 4 mm APPLICATIONS ■ COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES. DESCRIPTION The BU808DFH is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. TO-220FH (see page 6) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot V isol T stg Tj April 2002 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 1400 700 5 8 10 3 6 42 2500 -65 to 150 150 Unit V V V A A A A W V o o C C 1/7 BU808DFH THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 2.98 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES Collector Cut-off Current (V BE = 0) V CE = 1400 V 400 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 100 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5 A I B = 0.5 A 1.6 V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 5 A I B = 0.5 A 2.1 V DC Current Gain IC = 5 A IC = 5 A h FE ∗ V CE = 5 V V CE = 5 V o T C = 100 C ts tf INDUCTIVE LOAD Storage Time Fall Time V CC = 150 V I B1 = 0.5 A IC = 5 A V BE(off) = -5 V ts tf INDUCTIVE LOAD Storage Time Fall Time V CC = 150 V I B1 = 0.5 A T C = 100 o C IC = 5 A V BE(off) = -5 V VF Diode Forward Voltage IF = 5 A 2/7 230 3 0.8 Thermal Impedance µs µs µs µs 2 0.8 3 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 60 20 V BU808DFH Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time Inductive Load at 16KHz 3/7 BU808DFH Switching Time Inductive Load at 16KHZ Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at both 16 KHz scanning frequencies for choosing the optimum negative 4/7 drive. The test circuit is illustrated in figure 1. Inductance L1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 1 L (IC)2 = C (VCEfly)2 ω = 2 πf = 2 2 √ L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. BU808DFH Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BU808DFH TO-220FH (Fully plastic High voltage) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.3 1.8 0.051 0.070 F2 1.3 1.8 0.051 0.070 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 16 L3 28.6 L4 9.8 L5 0.409 0.630 30.6 1.126 10.6 0.385 3.4 1.204 0.417 0.134 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 L8 14.5 15 0.570 L9 2.4 0.590 0.094 P011W 6/7 BU808DFH Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7