BD336 SILICON PNP POWER DARLINGTON TRANSISTOR ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The BD336 is a silicon epitaxial-base PNP transistor in Darlingon configuration mounted in SOT-82 plastic package. It is inteded for use in audio output stages general amplifier and switching applications. 1 2 3 SOT-82 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) -100 V V CEO Collector-Emitter Voltage (I B = 0) -100 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -6 A -10 A IC I CM IB Collector Peak Current (t p < 10ms) Base Current P tot Total Dissipation at T c ≤ 25 o C T stg Storage Temperature Tj July 1997 Max. Operating Junction Temperature -0.15 A 60 W -65 to 150 o C 150 o C 1/4 BD336 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 2.08 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Test Conditions Typ. Max. Unit -0.2 -2 mA mA -0.5 mA -5 mA Collector Cut-off Current (I E = 0) V CB = -100 V V CB = -100 V I CEO Collector Cut-off Current (I B = 0) V CE = -50 V I EBO Emitter Cut-off Current (I C = 0) V EB = -5 V Collector-Emitter Saturation Voltage I C = -3 A I B = -12 mA -2 V V BE ∗ Base-Emitter Voltage I C = -3 A V CE = -3 V -2.5 V h FE ∗ DC Current Gain I C = -0.5 A I C = -3 A I C = -6 A V CE = -3 V V CE = -3 V V CE = -3 V V CE(sat) ∗ o T C = 150 C VF∗ Parallel Diode Forward Voltage I F = -3 A hfe Small Signal Current Gain I C = -3 A t on Turn on Time t off Turn off Time I C = -3 A V CC = -30 V I B1 = -IB2 = -12 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 Min. 2700 750 400 -1.8 V CE = -3 V f = 1MHz V 150 1 2 µs 5 10 µs BD336 SOT-82 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.444 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.04 0.106 c1 1.0 1.3 0.039 0.05 D 15.4 16 0.606 0.629 e 0.087 4.15 4.65 F 0.163 0.183 3.8 0.150 H 2.54 H2 0.100 2.15 0.084 C B F A H2 D H e3 2.2 c1 b e b1 e3 P032A 3/4 BD336 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4