2N6284 2N6287 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The 2N6284 is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. The complementary PNP types is 2N6287. TO-3 INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 60 Ω R1 Typ. = 8 KΩ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN 2N6284 PNP 2N6287 Unit V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V 20 A Collector Peak Current 40 A Base Current 0.5 A P tot Total Dissipation at T c ≤ 25 o C 160 W T stg Storage Temperature IC I CM IB Tj Collector Current Max. Operating Junction Temperature -65 to 200 o C 200 o C For PNP types voltage and current values are negative. June 1997 1/4 2N6284 / 2N6287 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.09 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Test Conditions Min. Typ. Max. Unit 0.5 5 mA mA Collector Cut-off Current (V BE = -1.5V) V CE = rated V CEO V CE = rated V CEO I CEO Collector Cut-off Current (I B = 0) V CE = 50 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage o T c = 150 C I C = 100 mA 100 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 10 A I C = 20 A I B = 40 mA I B = 200 mA 2 3 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 20 A I B = 200 mA 4 V V BE ∗ Base-Emitter Voltage I C = 10 A V CE = 3 V 2.8 V h FE ∗ DC Current Gain I C = 10 A I C = 20 A V CE = 3 V V CE = 3 V Small Signal Current Gain IC = 3 A Collector Base Capacitance IE = 0 V CB = 10 V for NPN types for PNP types hfe C CBO ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 V CE = 10 V 750 100 f = 1KHz 18000 300 f = 100KHz 400 600 pF pF 2N6284 / 2N6287 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 2N6284 / 2N6287 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4